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FQPF22N30-VB Product details
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Product Introduction
FQPF22N30-VB is a high voltage single N-channel MOSFET in TO-220F package, designed for applications requiring high current and high voltage. The device has a drain-source voltage (VDS) of 500V and a gate-source voltage (VGS) tolerance of ±30V, and can handle currents up to 30A. It uses Super Junction (SJ) and Multi-EPI technology to provide low on-resistance and excellent switching performance, suitable for power management applications that require efficient energy conversion and reliability.
FQPF22N30-VB is a high voltage single N-channel MOSFET in TO-220F package, designed for applications requiring high current and high voltage. The device has a drain-source voltage (VDS) of 500V and a gate-source voltage (VGS) tolerance of ±30V, and can handle currents up to 30A. It uses Super Junction (SJ) and Multi-EPI technology to provide low on-resistance and excellent switching performance, suitable for power management applications that require efficient energy conversion and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 500V | 3.5V | 30A | 140mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 500V | 3.5V | 30A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 500V | 3.5V | 30A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package type**: TO-220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 140mΩ @ VGS = 10V
- **Drain current (ID)**: 30A
- **Technology type**: Super junction (SJ) multi-epitaxial (Multi-EPI) process
- **Package type**: TO-220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 140mΩ @ VGS = 10V
- **Drain current (ID)**: 30A
- **Technology type**: Super junction (SJ) multi-epitaxial (Multi-EPI) process
Domain and module applications：
Applications and modules
1. **Photovoltaic inverter**: The high voltage tolerance and low on-resistance of the FQPF22N30-VB make it perform well in photovoltaic inverters. In these applications, MOSFETs are often used for DC-AC conversion to convert the DC power generated by solar panels into AC power and achieve efficient energy conversion.
2. **Switching power supply (SMPS)**: The device is suitable for high-voltage switching power supply modules, especially in industrial and communication power supplies. FQPF22N30-VB can be used as the main switching device to provide efficient power conversion and stability in these modules, helping to reduce power losses and improve system efficiency.
3. **Electric vehicle charging pile**: In electric vehicle charging piles, the high current and high voltage handling capabilities of this MOSFET are key advantages. FQPF22N30-VB can be used to control the power output and conversion of the charging pile, providing a stable and efficient charging experience for electric vehicles.
4. **Industrial Motor Drive**: FQPF22N30-VB excels in industrial motor drive applications. Its high current handling capability and low conduction losses make it suitable for industrial drive systems that require precise control and efficient energy conversion, such as automation equipment and heavy machinery.
Through these application examples, FQPF22N30-VB demonstrates its wide applicability in the field of high voltage and high power management, making it an ideal choice in modules such as photovoltaic systems, power management, electric vehicle charging piles, and industrial motor drives.
1. **Photovoltaic inverter**: The high voltage tolerance and low on-resistance of the FQPF22N30-VB make it perform well in photovoltaic inverters. In these applications, MOSFETs are often used for DC-AC conversion to convert the DC power generated by solar panels into AC power and achieve efficient energy conversion.
2. **Switching power supply (SMPS)**: The device is suitable for high-voltage switching power supply modules, especially in industrial and communication power supplies. FQPF22N30-VB can be used as the main switching device to provide efficient power conversion and stability in these modules, helping to reduce power losses and improve system efficiency.
3. **Electric vehicle charging pile**: In electric vehicle charging piles, the high current and high voltage handling capabilities of this MOSFET are key advantages. FQPF22N30-VB can be used to control the power output and conversion of the charging pile, providing a stable and efficient charging experience for electric vehicles.
4. **Industrial Motor Drive**: FQPF22N30-VB excels in industrial motor drive applications. Its high current handling capability and low conduction losses make it suitable for industrial drive systems that require precise control and efficient energy conversion, such as automation equipment and heavy machinery.
Through these application examples, FQPF22N30-VB demonstrates its wide applicability in the field of high voltage and high power management, making it an ideal choice in modules such as photovoltaic systems, power management, electric vehicle charging piles, and industrial motor drives.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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