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FQPF20N60C-VB Product details
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FQPF20N60C-VB MOSFET Product Introduction
FQPF20N60C-VB is a high voltage N-channel power MOSFET in TO220F package, suitable for high power and high voltage applications. The device has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, and its turn-on voltage (Vth) is 3.5V. The on-resistance (RDS(ON)@VGS=10V) of FQPF20N60C-VB is 160mΩ, and the maximum drain current (ID) is 20A. It adopts SJ (super junction) multi-epitaxial technology, designed to provide efficient power switching performance and stable operation capabilities.
FQPF20N60C-VB is a high voltage N-channel power MOSFET in TO220F package, suitable for high power and high voltage applications. The device has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, and its turn-on voltage (Vth) is 3.5V. The on-resistance (RDS(ON)@VGS=10V) of FQPF20N60C-VB is 160mΩ, and the maximum drain current (ID) is 20A. It adopts SJ (super junction) multi-epitaxial technology, designed to provide efficient power switching performance and stable operation capabilities.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
FQPF20N60C-VB MOSFET Detailed parameter description
1. **Package type**: TO220F
- Provides good heat dissipation performance and is suitable for use in high power and high voltage environments.
2. **Configuration**: Single N-channel
- The single N-channel configuration provides low on-resistance and high switching speed, suitable for efficient power switching applications.
3. **Drain-source voltage (VDS)**: 650V
- Able to withstand voltages up to 650V, suitable for high voltage power supplies and power conversion applications.
4. **Gate-source voltage (VGS)**: ±30V
- Supports gate drive voltage of ±30V to ensure the stability of the device under different voltage conditions.
5. **Turning point voltage (Vth)**: 3.5V
- Indicates that the MOSFET starts to conduct when the gate voltage reaches 3.5V, providing a moderate turning-on voltage.
6. **On-resistance (RDS(ON)@VGS=10V)**: 160mΩ
- Lower on-resistance reduces conduction loss and improves the energy efficiency of the system.
7. **Drain current (ID)**: 20A
- The maximum drain current is 20A, suitable for medium to high power applications.
8. **Technology type**: SJ_Multi-EPI (Super Junction Multi-Epi)
- This technology enables the device to maintain low on-resistance at high voltage, improving overall performance and reliability.
1. **Package type**: TO220F
- Provides good heat dissipation performance and is suitable for use in high power and high voltage environments.
2. **Configuration**: Single N-channel
- The single N-channel configuration provides low on-resistance and high switching speed, suitable for efficient power switching applications.
3. **Drain-source voltage (VDS)**: 650V
- Able to withstand voltages up to 650V, suitable for high voltage power supplies and power conversion applications.
4. **Gate-source voltage (VGS)**: ±30V
- Supports gate drive voltage of ±30V to ensure the stability of the device under different voltage conditions.
5. **Turning point voltage (Vth)**: 3.5V
- Indicates that the MOSFET starts to conduct when the gate voltage reaches 3.5V, providing a moderate turning-on voltage.
6. **On-resistance (RDS(ON)@VGS=10V)**: 160mΩ
- Lower on-resistance reduces conduction loss and improves the energy efficiency of the system.
7. **Drain current (ID)**: 20A
- The maximum drain current is 20A, suitable for medium to high power applications.
8. **Technology type**: SJ_Multi-EPI (Super Junction Multi-Epi)
- This technology enables the device to maintain low on-resistance at high voltage, improving overall performance and reliability.
Domain and module applications：
FQPF20N60C-VB MOSFET Applications and Module Examples
FQPF20N60C-VB MOSFET is widely used in the following fields due to its high voltage tolerance and excellent switching performance:
1. **Switching Power Supply (SMPS)**:
- In high voltage switching power supply design, this MOSFET can be used as a key power switch, suitable for handling 650V power supply voltage, ensuring efficient and stable power conversion.
2. **Motor Drive**:
- Suitable for high voltage motor drive systems, providing efficient current control, supporting the high power requirements of the motor, and enhancing the performance and efficiency of the drive.
3. **Inverter**:
- In photovoltaic inverters and other high voltage inverters, FQPF20N60C-VB MOSFET can realize high voltage DC to AC conversion, ensuring the stability and efficiency of the inverter.
4. **Power Converters**:
- Used in various power conversion modules, capable of handling high voltage power conversion tasks, meeting the needs of medium to high power applications, and improving overall system reliability and efficiency.
These applications demonstrate the superior performance of FQPF20N60C-VB MOSFET in high voltage and high power scenarios, especially in high voltage modules that require efficient switching and stable operation.
FQPF20N60C-VB MOSFET is widely used in the following fields due to its high voltage tolerance and excellent switching performance:
1. **Switching Power Supply (SMPS)**:
- In high voltage switching power supply design, this MOSFET can be used as a key power switch, suitable for handling 650V power supply voltage, ensuring efficient and stable power conversion.
2. **Motor Drive**:
- Suitable for high voltage motor drive systems, providing efficient current control, supporting the high power requirements of the motor, and enhancing the performance and efficiency of the drive.
3. **Inverter**:
- In photovoltaic inverters and other high voltage inverters, FQPF20N60C-VB MOSFET can realize high voltage DC to AC conversion, ensuring the stability and efficiency of the inverter.
4. **Power Converters**:
- Used in various power conversion modules, capable of handling high voltage power conversion tasks, meeting the needs of medium to high power applications, and improving overall system reliability and efficiency.
These applications demonstrate the superior performance of FQPF20N60C-VB MOSFET in high voltage and high power scenarios, especially in high voltage modules that require efficient switching and stable operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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