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FQPF1N50-VB Product details
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FQPF1N50-VB MOSFET Product Introduction
FQPF1N50-VB is a high voltage N-Channel power MOSFET in TO220F package, designed for applications requiring high voltage resistance and high reliability. Its main features include 650V drain-source voltage (VDS), 30V gate-source voltage (VGS), 3.5V threshold voltage (Vth) and 1700mΩ on-resistance (RDS(ON)) at 10V gate drive. The MOSFET can handle drain current (ID) up to 2A and is manufactured using Plannar technology, making it suitable for high voltage switching and power conversion applications.
FQPF1N50-VB is a high voltage N-Channel power MOSFET in TO220F package, designed for applications requiring high voltage resistance and high reliability. Its main features include 650V drain-source voltage (VDS), 30V gate-source voltage (VGS), 3.5V threshold voltage (Vth) and 1700mΩ on-resistance (RDS(ON)) at 10V gate drive. The MOSFET can handle drain current (ID) up to 2A and is manufactured using Plannar technology, making it suitable for high voltage switching and power conversion applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 2A | 1700mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: FQPF1N50-VB
- **Package type**: TO220F
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1700mΩ @ VGS=10V
- **Drain current (ID)**: 2A
- **Technology**: Plannar technology
- **Operating temperature range**: -55°C ~ 150°C
- **Model**: FQPF1N50-VB
- **Package type**: TO220F
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1700mΩ @ VGS=10V
- **Drain current (ID)**: 2A
- **Technology**: Plannar technology
- **Operating temperature range**: -55°C ~ 150°C
Domain and module applications：
Application fields and module examples
FQPF1N50-VB MOSFET is suitable for the following fields and modules due to its high voltage handling capability and stable switching characteristics:
1. **High voltage switching power supply**: In high voltage switching power supplies such as AC-DC converters and DC-DC converters, FQPF1N50-VB can withstand drain-source voltages up to 650V and effectively perform power switching. Although the on-resistance is high, it can still meet the high voltage application requirements in appropriate designs.
2. **Power inverter**: In power inverters, this MOSFET can handle the conversion of high voltage DC power to AC current, support high-efficiency power conversion, and ensure system stability.
3. **Motor control**: In high voltage motor control systems, this MOSFET can be used for switching control of motor drives, providing stable high voltage switching performance, suitable for motors and drive circuits.
4. **Lighting system**: In the control of high-voltage lighting systems, such as high-pressure sodium lamps or high-pressure xenon lamps, FQPF1N50-VB can effectively handle high-voltage switches and support the stable operation of high-power lighting systems.
5. **Industrial equipment**: In industrial equipment, this MOSFET can be used as a high-voltage switch to control and protect the high-voltage power supply in the equipment, ensuring the safe and stable operation of the equipment.
FQPF1N50-VB MOSFET is suitable for the following fields and modules due to its high voltage handling capability and stable switching characteristics:
1. **High voltage switching power supply**: In high voltage switching power supplies such as AC-DC converters and DC-DC converters, FQPF1N50-VB can withstand drain-source voltages up to 650V and effectively perform power switching. Although the on-resistance is high, it can still meet the high voltage application requirements in appropriate designs.
2. **Power inverter**: In power inverters, this MOSFET can handle the conversion of high voltage DC power to AC current, support high-efficiency power conversion, and ensure system stability.
3. **Motor control**: In high voltage motor control systems, this MOSFET can be used for switching control of motor drives, providing stable high voltage switching performance, suitable for motors and drive circuits.
4. **Lighting system**: In the control of high-voltage lighting systems, such as high-pressure sodium lamps or high-pressure xenon lamps, FQPF1N50-VB can effectively handle high-voltage switches and support the stable operation of high-power lighting systems.
5. **Industrial equipment**: In industrial equipment, this MOSFET can be used as a high-voltage switch to control and protect the high-voltage power supply in the equipment, ensuring the safe and stable operation of the equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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