FQPF19N20-VB Product details
Product introduction:
FQPF19N20-VB is a high-performance N-channel power MOSFET in TO-220F package. This MOSFET is designed for medium voltage applications and has a drain-source withstand voltage of 200V. It uses advanced Trench technology, which helps to reduce on-resistance, provide higher switching efficiency and lower power consumption. FQPF19N20-VB is particularly suitable for applications that require high current carrying capacity and low on-resistance, such as switching power supplies and motor control.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 20A | 58mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 20A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 20A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- **Package type**: TO-220F
- **Polarity**: Single N-channel
- **Drain-source withstand voltage (VDS)**: 200V
- **Gate voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 58mΩ @ VGS=10V
- **Drain current (ID)**: 20A
- **Technology**: Trench (trench technology)
Domain and module applications:
With its medium voltage tolerance and low on-resistance, FQPF19N20-VB is suitable for multiple applications and modules:
1. **Switching Power Supply**: In switching power supply design, FQPF19N20-VB can efficiently manage current and voltage conversion. Its low on-resistance helps to improve conversion efficiency and reduce power consumption, thereby improving the energy efficiency of the entire power system.
2. **Motor Drive**: In motor control circuits, this MOSFET can withstand large currents (20A) and provide stable switching performance. Its good on-characteristics make motor drives more efficient and reliable.
3. **DC-DC Converter**: FQPF19N20-VB performs well in DC-DC converters, can efficiently convert DC voltage and provide stable output. Its low RDS(ON) characteristics help to reduce power consumption and improve the overall performance of the converter.
4. **LED drive circuit**: In the LED drive circuit, this MOSFET can be used as an efficient switching device to control the switching and dimming of LED lights. Its good electrical characteristics ensure the accuracy and stability of light control.
FQPF19N20-VB is suitable for a variety of medium voltage applications through its high current handling capability and low power consumption, providing a reliable switching solution for various electronic devices.
Technical support:
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