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FQPF19N20C-VB Product details
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1. FQPF19N20C-VB MOSFET Product Introduction
FQPF19N20C-VB is a single N-channel power MOSFET in TO220F package. With a drain-source voltage (VDS) of 200V and a gate-source voltage (VGS) of ±20V, this MOSFET is suitable for medium and high voltage switching and power management applications. Its threshold voltage (Vth) is 3V, ensuring effective switching even at lower gate-source voltages. The on-resistance (RDS(ON)) of FQPF19N20C-VB is 58mΩ@VGS=10V, providing low conduction losses and good current carrying capacity. Using Trench technology, this MOSFET excels in high efficiency and high switching speed, making it an ideal choice for high-performance power management and power control applications.
FQPF19N20C-VB is a single N-channel power MOSFET in TO220F package. With a drain-source voltage (VDS) of 200V and a gate-source voltage (VGS) of ±20V, this MOSFET is suitable for medium and high voltage switching and power management applications. Its threshold voltage (Vth) is 3V, ensuring effective switching even at lower gate-source voltages. The on-resistance (RDS(ON)) of FQPF19N20C-VB is 58mΩ@VGS=10V, providing low conduction losses and good current carrying capacity. Using Trench technology, this MOSFET excels in high efficiency and high switching speed, making it an ideal choice for high-performance power management and power control applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 20A | 58mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 20A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 20A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. FQPF19N20C-VB MOSFET Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 58mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology**: Trench technology
- **Power consumption**: 94W (max)
- **Junction temperature range**: -55°C to +150°C
- **Switching speed**: High switching speed, suitable for high frequency applications
- **Input capacitance (Ciss)**: 1500pF
- **Reverse recovery time (trr)**: 200ns
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 58mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology**: Trench technology
- **Power consumption**: 94W (max)
- **Junction temperature range**: -55°C to +150°C
- **Switching speed**: High switching speed, suitable for high frequency applications
- **Input capacitance (Ciss)**: 1500pF
- **Reverse recovery time (trr)**: 200ns
Domain and module applications：
3. FQPF19N20C-VB MOSFET Applications and Module Examples
1. **Switching Power Supply (SMPS)**: FQPF19N20C-VB is ideal for use in switching power supplies, especially high voltage power switching applications. Its low on-resistance and high switching speed can improve system efficiency and reduce energy loss.
2. **DC-DC Converter**: In a DC-DC converter, this MOSFET can be used in a step-up or step-down circuit to provide stable current conversion and high efficiency conversion. Suitable for battery-powered devices and power modules.
3. **Motor Drive**: FQPF19N20C-VB also excels in motor control applications, such as motor drives and servo systems. Its high current handling capability and low conduction losses make it a reliable choice for motor drive systems.
4. **Battery Management System**: In the Battery Management System (BMS), this MOSFET can be used as a high-voltage switch or protection switch for the charge and discharge management of the battery pack, ensuring the safe and efficient operation of the system.
5. **Power Inverter**: In solar inverters and uninterruptible power supply (UPS) systems, the FQPF19N20C-VB can efficiently convert DC to AC, ensuring the stability and high efficiency of the system.
These application examples demonstrate the wide applicability of the FQPF19N20C-VB MOSFET in a variety of high-voltage and high-power applications, providing reliable solutions for different fields.
1. **Switching Power Supply (SMPS)**: FQPF19N20C-VB is ideal for use in switching power supplies, especially high voltage power switching applications. Its low on-resistance and high switching speed can improve system efficiency and reduce energy loss.
2. **DC-DC Converter**: In a DC-DC converter, this MOSFET can be used in a step-up or step-down circuit to provide stable current conversion and high efficiency conversion. Suitable for battery-powered devices and power modules.
3. **Motor Drive**: FQPF19N20C-VB also excels in motor control applications, such as motor drives and servo systems. Its high current handling capability and low conduction losses make it a reliable choice for motor drive systems.
4. **Battery Management System**: In the Battery Management System (BMS), this MOSFET can be used as a high-voltage switch or protection switch for the charge and discharge management of the battery pack, ensuring the safe and efficient operation of the system.
5. **Power Inverter**: In solar inverters and uninterruptible power supply (UPS) systems, the FQPF19N20C-VB can efficiently convert DC to AC, ensuring the stability and high efficiency of the system.
These application examples demonstrate the wide applicability of the FQPF19N20C-VB MOSFET in a variety of high-voltage and high-power applications, providing reliable solutions for different fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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