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FQPF18N50V2-VB Product details
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FQPF18N50V2-VB MOSFET Product Introduction
FQPF18N50V2-VB is a high voltage N-channel power MOSFET in a TO220F package. The device can withstand drain-source voltage (VDS) up to 650V and has a gate-source voltage (VGS) range of ±30V. Its turn-on voltage (Vth) is 3.5V, on-resistance (RDS(ON)@VGS=10V) is 160mΩ, and maximum drain current (ID) is 20A. This MOSFET uses SJ (super junction) multi-epitaxial technology and is suitable for efficient power conversion and high voltage applications.
FQPF18N50V2-VB is a high voltage N-channel power MOSFET in a TO220F package. The device can withstand drain-source voltage (VDS) up to 650V and has a gate-source voltage (VGS) range of ±30V. Its turn-on voltage (Vth) is 3.5V, on-resistance (RDS(ON)@VGS=10V) is 160mΩ, and maximum drain current (ID) is 20A. This MOSFET uses SJ (super junction) multi-epitaxial technology and is suitable for efficient power conversion and high voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
FQPF18N50V2-VB MOSFET Detailed parameter description
1. **Package type**: TO220F
- This package provides good heat dissipation and is suitable for high-power applications.
2. **Configuration**: Single N-channel
- With low on-resistance and high switching speed, it is suitable for high-efficiency switching and power regulation applications.
3. **Drain-source voltage (VDS)**: 650V
- Able to withstand voltages up to 650V, suitable for medium and high voltage power conversion and switching applications.
4. **Gate-source voltage (VGS)**: ±30V
- The wide range of gate drive voltage improves the reliability and stability of the device.
5. **Throw-on voltage (Vth)**: 3.5V
- The turn-on voltage is 3.5V, which means that the MOSFET starts to conduct at this gate voltage.
6. **On-resistance (RDS(ON)@VGS=10V)**: 160mΩ
- Low on-resistance helps reduce conduction losses and improve overall system efficiency.
7. **Drain current (ID)**: 20A
- The maximum drain current is 20A, suitable for medium to high power applications.
8. **Technology type**: SJ_Multi-EPI (Superjunction Multi-Epi)
- This technology enables the device to maintain low on-resistance at high voltage, improving the efficiency and stability of the device.
1. **Package type**: TO220F
- This package provides good heat dissipation and is suitable for high-power applications.
2. **Configuration**: Single N-channel
- With low on-resistance and high switching speed, it is suitable for high-efficiency switching and power regulation applications.
3. **Drain-source voltage (VDS)**: 650V
- Able to withstand voltages up to 650V, suitable for medium and high voltage power conversion and switching applications.
4. **Gate-source voltage (VGS)**: ±30V
- The wide range of gate drive voltage improves the reliability and stability of the device.
5. **Throw-on voltage (Vth)**: 3.5V
- The turn-on voltage is 3.5V, which means that the MOSFET starts to conduct at this gate voltage.
6. **On-resistance (RDS(ON)@VGS=10V)**: 160mΩ
- Low on-resistance helps reduce conduction losses and improve overall system efficiency.
7. **Drain current (ID)**: 20A
- The maximum drain current is 20A, suitable for medium to high power applications.
8. **Technology type**: SJ_Multi-EPI (Superjunction Multi-Epi)
- This technology enables the device to maintain low on-resistance at high voltage, improving the efficiency and stability of the device.
Domain and module applications：
FQPF18N50V2-VB MOSFET Applications and Module Examples
FQPF18N50V2-VB MOSFET is suitable for multiple high voltage and high power applications due to its high voltage, high efficiency and good thermal management characteristics, such as:
1. **Switching Power Supply (SMPS)**:
- In high voltage switching power supplies, FQPF18N50V2-VB MOSFET can be used as the main power switching component to provide stable power conversion, suitable for power supply designs that require 650V voltage tolerance.
2. **Motor Driver**:
- Used in high voltage motor drive modules, it provides efficient current control and switching capabilities, can support the high power requirements of the motor, and improve system performance and efficiency.
3. **Inverter**:
- In photovoltaic inverters and other high-voltage inverters, FQPF18N50V2-VB MOSFET is suitable for high-voltage DC to AC conversion, ensuring that the inverter can work stably and efficiently.
4. **Power Converter**:
- Suitable for various power converters, capable of handling high-voltage power conversion tasks, meeting the needs of medium and high power applications, and improving the reliability and efficiency of the overall system.
These applications demonstrate the wide applicability of FQPF18N50V2-VB MOSFET in high voltage and high power fields, especially in high-voltage modules that require high performance and stability.
FQPF18N50V2-VB MOSFET is suitable for multiple high voltage and high power applications due to its high voltage, high efficiency and good thermal management characteristics, such as:
1. **Switching Power Supply (SMPS)**:
- In high voltage switching power supplies, FQPF18N50V2-VB MOSFET can be used as the main power switching component to provide stable power conversion, suitable for power supply designs that require 650V voltage tolerance.
2. **Motor Driver**:
- Used in high voltage motor drive modules, it provides efficient current control and switching capabilities, can support the high power requirements of the motor, and improve system performance and efficiency.
3. **Inverter**:
- In photovoltaic inverters and other high-voltage inverters, FQPF18N50V2-VB MOSFET is suitable for high-voltage DC to AC conversion, ensuring that the inverter can work stably and efficiently.
4. **Power Converter**:
- Suitable for various power converters, capable of handling high-voltage power conversion tasks, meeting the needs of medium and high power applications, and improving the reliability and efficiency of the overall system.
These applications demonstrate the wide applicability of FQPF18N50V2-VB MOSFET in high voltage and high power fields, especially in high-voltage modules that require high performance and stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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