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FQPF14N15-VB Product details

Product introduction:

1. FQPF14N15-VB MOSFET Product Introduction

FQPF14N15-VB is a single N-channel power MOSFET in TO220F package. With a drain-source voltage (VDS) of 200V and a gate-source voltage (VGS) of ±20V, this MOSFET is suitable for medium and high voltage power management and switching applications. Its threshold voltage (Vth) is 3V, which can effectively conduct at a lower gate-source voltage. The on-resistance (RDS(ON)) of FQPF14N15-VB is 58mΩ@VGS=10V, which can provide good switching performance while ensuring low conduction losses. Using advanced Trench technology, this MOSFET excels in increasing switching speed and reducing conduction losses, and is very suitable for applications that require high performance and high reliability.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 200V 3V 20A 58mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 200V 3V 20A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 200V 3V 20A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
2. FQPF14N15-VB MOSFET Detailed parameter description

- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 58mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology**: Trench technology
- **Power consumption**: 94W (max)
- **Junction temperature range**: -55°C to +150°C
- **Switching speed**: With fast switching speed, suitable for high frequency applications
- **Input capacitance (Ciss)**: 1300pF
- **Reverse recovery time (trr)**: 180ns

Domain and module applications:

3. FQPF14N15-VB MOSFET Applications and Module Examples

1. **Switching Power Supply (SMPS)**: FQPF14N15-VB can be used to switch and regulate the power supply voltage in switching power supply design, especially in cases where high efficiency and low conduction loss are required, such as computer power supply and communication equipment power supply.

2. **DC-DC Converter**: Due to its low on-resistance and high switching speed, FQPF14N15-VB is suitable for use in DC-DC converters, especially for high-efficiency buck converters and boost converters.

3. **Motor Drive**: This MOSFET can be used in motor drive circuits, such as DC motor control and stepper motor drive, and can provide stable switching performance and high reliability.

4. **Battery Management System**: In the Battery Management System (BMS), FQPF14N15-VB can be used as a protection switch or load switch, especially in the management of medium and high voltage battery packs, providing efficient power control and protection functions.

5. **Power Inverter**: In power inverter applications, such as solar inverters or UPS systems, this MOSFET can efficiently convert DC to AC, ensuring high efficiency and stability of the system.

These application examples show the wide applicability of the FQPF14N15-VB MOSFET, which can effectively improve system performance and reliability in multiple fields, from power management to motor drives and battery management systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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