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FQPF13N50CF-VB Product details
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FQPF13N50CF-VB MOSFET Product Introduction
The FQPF13N50CF-VB is a high voltage N-channel power MOSFET in a TO220F package. The device features a drain-source voltage (VDS) of 550V and a gate-source voltage (VGS) of ±30V, with a turn-on voltage (Vth) of 3V. With an on-resistance of 260mΩ (RDS(ON)@VGS=10V) and a maximum drain current (ID) of 18A, the FQPF13N50CF-VB uses Plannar technology and is designed for efficient power switching and high voltage applications.
The FQPF13N50CF-VB is a high voltage N-channel power MOSFET in a TO220F package. The device features a drain-source voltage (VDS) of 550V and a gate-source voltage (VGS) of ±30V, with a turn-on voltage (Vth) of 3V. With an on-resistance of 260mΩ (RDS(ON)@VGS=10V) and a maximum drain current (ID) of 18A, the FQPF13N50CF-VB uses Plannar technology and is designed for efficient power switching and high voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | 260mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
FQPF13N50CF-VB MOSFET Detailed parameter description
1. **Package type**: TO220F
- This package provides excellent heat dissipation and is suitable for high power applications.
2. **Configuration**: Single N-channel
- Designed as a single N-channel configuration with high switching speed and low on-resistance.
3. **Drain-source voltage (VDS)**: 550V
- Able to withstand voltages up to 550V, suitable for medium and high voltage applications.
4. **Gate-source voltage (VGS)**: ±30V
- A wide gate drive voltage range improves the reliability and stability of the MOSFET.
5. **Turning point voltage (Vth)**: 3V
- The turning point voltage is 3V, indicating that the MOSFET starts to conduct at this gate voltage.
6. **On-resistance (RDS(ON)@VGS=10V)**: 260mΩ
- Lower on-resistance helps reduce conduction loss and improve system efficiency.
7. **Drain current (ID)**: 18A
- The maximum drain current is 18A, suitable for medium power load applications.
8. **Technology type**: Plannar
- Plannar technology is used to manufacture planar MOSFETs, which have better switching characteristics and stability.
1. **Package type**: TO220F
- This package provides excellent heat dissipation and is suitable for high power applications.
2. **Configuration**: Single N-channel
- Designed as a single N-channel configuration with high switching speed and low on-resistance.
3. **Drain-source voltage (VDS)**: 550V
- Able to withstand voltages up to 550V, suitable for medium and high voltage applications.
4. **Gate-source voltage (VGS)**: ±30V
- A wide gate drive voltage range improves the reliability and stability of the MOSFET.
5. **Turning point voltage (Vth)**: 3V
- The turning point voltage is 3V, indicating that the MOSFET starts to conduct at this gate voltage.
6. **On-resistance (RDS(ON)@VGS=10V)**: 260mΩ
- Lower on-resistance helps reduce conduction loss and improve system efficiency.
7. **Drain current (ID)**: 18A
- The maximum drain current is 18A, suitable for medium power load applications.
8. **Technology type**: Plannar
- Plannar technology is used to manufacture planar MOSFETs, which have better switching characteristics and stability.
Domain and module applications：
FQPF13N50CF-VB MOSFET Applications and Module Examples
FQPF13N50CF-VB MOSFET is widely used in the following fields due to its high voltage capability and excellent electrical performance:
1. **Switching Power Supply (SMPS)**:
- In the switching power supply module, this MOSFET can be used as a high-voltage side switch, providing stable current control and efficient power conversion, suitable for power supply design requiring 550V withstand voltage.
2. **Motor Driver**:
- Suitable for the power switch part in the motor drive system, providing efficient current control and driving capability, suitable for high-voltage motor control and drive.
3. **Inverter**:
- In photovoltaic inverters or other high-voltage inverter modules, FQPF13N50CF-VB MOSFET can handle high-voltage DC and perform efficient AC conversion to meet the system's demand for high-voltage devices.
4. **Power Converters**:
- Suitable for high voltage power converters to achieve efficient power conversion and regulation, ensuring system reliability and stable performance.
These applications demonstrate the powerful performance of FQPF13N50CF-VB MOSFET in high voltage environments, especially in modules that require high power switching and high voltage tolerance.
FQPF13N50CF-VB MOSFET is widely used in the following fields due to its high voltage capability and excellent electrical performance:
1. **Switching Power Supply (SMPS)**:
- In the switching power supply module, this MOSFET can be used as a high-voltage side switch, providing stable current control and efficient power conversion, suitable for power supply design requiring 550V withstand voltage.
2. **Motor Driver**:
- Suitable for the power switch part in the motor drive system, providing efficient current control and driving capability, suitable for high-voltage motor control and drive.
3. **Inverter**:
- In photovoltaic inverters or other high-voltage inverter modules, FQPF13N50CF-VB MOSFET can handle high-voltage DC and perform efficient AC conversion to meet the system's demand for high-voltage devices.
4. **Power Converters**:
- Suitable for high voltage power converters to achieve efficient power conversion and regulation, ensuring system reliability and stable performance.
These applications demonstrate the powerful performance of FQPF13N50CF-VB MOSFET in high voltage environments, especially in modules that require high power switching and high voltage tolerance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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