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FQPF11N60-VB Product details
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1. FQPF11N60-VB MOSFET Product Introduction
FQPF11N60-VB is a single N-channel power MOSFET in TO220F package, designed for high voltage applications. It has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, which is very suitable for use in power management applications that require high voltage resistance and high efficiency. Its 3.5V threshold voltage (Vth) ensures reliable turn-on under various driving conditions. At the same time, the device has an on-resistance (RDS(ON)) of 320mΩ @VGS=10V, which can handle currents up to 20A while achieving low conduction losses. This MOSFET is manufactured using planar technology and has good switching performance and reliability.
FQPF11N60-VB is a single N-channel power MOSFET in TO220F package, designed for high voltage applications. It has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, which is very suitable for use in power management applications that require high voltage resistance and high efficiency. Its 3.5V threshold voltage (Vth) ensures reliable turn-on under various driving conditions. At the same time, the device has an on-resistance (RDS(ON)) of 320mΩ @VGS=10V, which can handle currents up to 20A while achieving low conduction losses. This MOSFET is manufactured using planar technology and has good switching performance and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 320mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. FQPF11N60-VB MOSFET Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 320mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology**: Planar
- **Power consumption**: 190W (max)
- **Junction temperature range**: -55°C to +150°C
- **Switching speed**: With fast rise and fall times, suitable for high frequency switching applications
- **Input capacitance (Ciss)**: 1350pF
- **Reverse recovery time (trr)**: 350ns
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 320mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology**: Planar
- **Power consumption**: 190W (max)
- **Junction temperature range**: -55°C to +150°C
- **Switching speed**: With fast rise and fall times, suitable for high frequency switching applications
- **Input capacitance (Ciss)**: 1350pF
- **Reverse recovery time (trr)**: 350ns
Domain and module applications：
3. FQPF11N60-VB MOSFET Applications and Module Examples
1. **Power Management Module**: This MOSFET can be used in PFC (Power Factor Correction) circuits and secondary-side rectification circuits in switch mode power supplies (SMPS). Due to its high withstand voltage and low on-resistance, it can effectively improve system efficiency and reduce energy loss.
2. **Motor Drive**: In motor drive applications, this device can be used as a switching element for inverters, suitable for industrial motor control and motor drive systems for home appliances, such as washing machines and air conditioners.
3. **Lighting System**: Suitable for drive circuits in LED lighting systems, especially when high voltages need to be handled, such as street lights or industrial lighting systems.
4. **Industrial Control**: Due to its high current and high voltage characteristics, the FQPF11N60-VB is very suitable for high-voltage switches or protection circuits in industrial control systems.
5. **Battery Management System**: In the battery management system (BMS) of new energy electric vehicles, this device can be used for charge and discharge control of high-voltage battery packs.
Through these application examples, the FQPF11N60-VB MOSFET demonstrates its wide applicability in multiple high-voltage and high-power fields, and can provide reliable solutions for different application scenarios.
1. **Power Management Module**: This MOSFET can be used in PFC (Power Factor Correction) circuits and secondary-side rectification circuits in switch mode power supplies (SMPS). Due to its high withstand voltage and low on-resistance, it can effectively improve system efficiency and reduce energy loss.
2. **Motor Drive**: In motor drive applications, this device can be used as a switching element for inverters, suitable for industrial motor control and motor drive systems for home appliances, such as washing machines and air conditioners.
3. **Lighting System**: Suitable for drive circuits in LED lighting systems, especially when high voltages need to be handled, such as street lights or industrial lighting systems.
4. **Industrial Control**: Due to its high current and high voltage characteristics, the FQPF11N60-VB is very suitable for high-voltage switches or protection circuits in industrial control systems.
5. **Battery Management System**: In the battery management system (BMS) of new energy electric vehicles, this device can be used for charge and discharge control of high-voltage battery packs.
Through these application examples, the FQPF11N60-VB MOSFET demonstrates its wide applicability in multiple high-voltage and high-power fields, and can provide reliable solutions for different application scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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