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FQPF10N90C-VB Product details
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FQPF10N90C-VB MOSFET Product Introduction
FQPF10N90C-VB is a high voltage single N-channel power MOSFET in TO220F package. The MOSFET has a drain-source voltage (VDS) of 900V and a gate-source voltage (VGS) of ±30V, and its turn-on voltage (Vth) is 3.5V. With an on-resistance of 560mΩ (RDS(ON)@VGS=10V) and a drain current (ID) of 9A, the device adopts SJ (super junction) multi-epitaxial technology and is designed for high-efficiency switching power supplies and high-voltage applications.
FQPF10N90C-VB is a high voltage single N-channel power MOSFET in TO220F package. The MOSFET has a drain-source voltage (VDS) of 900V and a gate-source voltage (VGS) of ±30V, and its turn-on voltage (Vth) is 3.5V. With an on-resistance of 560mΩ (RDS(ON)@VGS=10V) and a drain current (ID) of 9A, the device adopts SJ (super junction) multi-epitaxial technology and is designed for high-efficiency switching power supplies and high-voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 900V | 3.5V | 9A | 560mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
FQPF10N90C-VB MOSFET Detailed parameter description
1. **Package type**: TO220F
- Provides better heat dissipation performance and is suitable for use in high-power applications.
2. **Configuration**: Single N-channel
- Has low on-resistance and high switching speed, suitable for high-efficiency switching applications.
3. **Drain-source voltage (VDS)**: 900V
- Able to withstand voltages up to 900V, suitable for high-voltage application scenarios.
4. **Gate-source voltage (VGS)**: ±30V
- The wide range of gate drive voltage makes this MOSFET have strong anti-interference ability.
5. **Turning on voltage (Vth)**: 3.5V
- This voltage value indicates the gate voltage at which the MOSFET starts to turn on.
6. **On-resistance (RDS(ON)@VGS=10V)**: 560mΩ
- Lower on-resistance reduces conduction loss and improves system efficiency.
7. **Drain current (ID)**: 9A
- Maximum continuous drain current is 9A, suitable for medium power applications.
8. **Technology type**: SJ_Multi-EPI (Superjunction Multi-Epi)
- This technology allows the device to maintain low on-resistance under high voltage, while improving the efficiency and reliability of the device.
1. **Package type**: TO220F
- Provides better heat dissipation performance and is suitable for use in high-power applications.
2. **Configuration**: Single N-channel
- Has low on-resistance and high switching speed, suitable for high-efficiency switching applications.
3. **Drain-source voltage (VDS)**: 900V
- Able to withstand voltages up to 900V, suitable for high-voltage application scenarios.
4. **Gate-source voltage (VGS)**: ±30V
- The wide range of gate drive voltage makes this MOSFET have strong anti-interference ability.
5. **Turning on voltage (Vth)**: 3.5V
- This voltage value indicates the gate voltage at which the MOSFET starts to turn on.
6. **On-resistance (RDS(ON)@VGS=10V)**: 560mΩ
- Lower on-resistance reduces conduction loss and improves system efficiency.
7. **Drain current (ID)**: 9A
- Maximum continuous drain current is 9A, suitable for medium power applications.
8. **Technology type**: SJ_Multi-EPI (Superjunction Multi-Epi)
- This technology allows the device to maintain low on-resistance under high voltage, while improving the efficiency and reliability of the device.
Domain and module applications：
FQPF10N90C-VB MOSFET Applications and Module Examples
FQPF10N90C-VB MOSFET is suitable for multiple high voltage applications due to its high voltage, high efficiency and low conduction loss characteristics. For example:
1. **Switching Power Supply (SMPS)**:
- In the switching power supply, FQPF10N90C-VB MOSFET is used for the power switch on the high voltage side, which can effectively control the conversion of electric energy and improve the conversion efficiency. It is especially suitable for power modules that require 900V withstand voltage capability.
2. **Motor Driver**:
- This MOSFET can be used in high voltage motor driver modules to provide precise current control and efficient power conversion capabilities, which helps to improve the efficiency and response speed of the motor.
3. **Lighting Controller**:
- FQPF10N90C-VB MOSFET is suitable for high voltage LED drivers and HID lighting controllers, which can provide stable current output to ensure the reliability and life of lighting equipment.
4. **Photovoltaic Inverter**:
- In photovoltaic systems, this MOSFET can be used in high-voltage inverter modules to achieve efficient conversion from DC to AC while meeting the system's demand for high-voltage devices.
These application scenarios demonstrate the important role of the FQPF10N90C-VB MOSFET in high-voltage, high-power modules, which can significantly improve system reliability and efficiency.
FQPF10N90C-VB MOSFET is suitable for multiple high voltage applications due to its high voltage, high efficiency and low conduction loss characteristics. For example:
1. **Switching Power Supply (SMPS)**:
- In the switching power supply, FQPF10N90C-VB MOSFET is used for the power switch on the high voltage side, which can effectively control the conversion of electric energy and improve the conversion efficiency. It is especially suitable for power modules that require 900V withstand voltage capability.
2. **Motor Driver**:
- This MOSFET can be used in high voltage motor driver modules to provide precise current control and efficient power conversion capabilities, which helps to improve the efficiency and response speed of the motor.
3. **Lighting Controller**:
- FQPF10N90C-VB MOSFET is suitable for high voltage LED drivers and HID lighting controllers, which can provide stable current output to ensure the reliability and life of lighting equipment.
4. **Photovoltaic Inverter**:
- In photovoltaic systems, this MOSFET can be used in high-voltage inverter modules to achieve efficient conversion from DC to AC while meeting the system's demand for high-voltage devices.
These application scenarios demonstrate the important role of the FQPF10N90C-VB MOSFET in high-voltage, high-power modules, which can significantly improve system reliability and efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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