FQPF10N60-VB Product details
Product introduction:
**FQPF10N60-VB** is a high voltage N-Channel MOSFET in TO220F package. It is designed for high voltage and medium current applications, with a drain-source voltage (VDS) of up to 650V and a gate-source voltage (VGS) of ±30V. The threshold voltage (Vth) is 3.5V. Under the condition of VGS = 10V, its on-resistance (RDS(ON)) is 830mΩ and the maximum leakage current (ID) is 10A. FQPF10N60-VB uses Plannar technology to provide high voltage handling capability and stable switching performance, suitable for a variety of occasions requiring high voltage and current control.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | 830mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- **Model**: FQPF10N60-VB
- **Package**: TO220F
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 830mΩ (VGS = 10V)
- **Maximum leakage current (ID)**: 10A
- **Technology**: Plannar
Domain and module applications:
**FQPF10N60-VB**'s high voltage and medium current capabilities make it important in multiple fields and modules:
1. **Power Management**: FQPF10N60-VB is suitable for switching and control applications in power management systems, such as high voltage DC-DC converters and power modules. Its high drain-source voltage capability and stable switching performance enable it to effectively handle high voltage loads in power conversion and improve system efficiency.
2. **Power Switching**: Due to its maximum drain-source voltage of 650V, FQPF10N60-VB is suitable for high voltage power switching applications. It can work stably in a high voltage environment, suitable for power switching and load control, and can effectively control current flow and reduce power loss.
3. **Electric Vehicles**: In electric vehicles, the FQPF10N60-VB can be used as a high voltage switch, such as in battery management systems and motor drive systems. Its high voltage capability ensures that it can handle the higher voltage requirements in electric vehicles and provide stable current control.
4. **Industrial Control**: This MOSFET is suitable for industrial control systems such as motor control and control of high voltage heating elements. Its high voltage handling capability and stable switching performance make it suitable for industrial equipment requiring high voltage and reliability.
5. **Power Converters**: In various power converter applications, such as inverters and chargers, the FQPF10N60-VB can effectively handle high voltage switch control. Its superior voltage and current handling capabilities ensure efficient and reliable operation during power conversion.
These application scenarios demonstrate the advantages of FQPF10N60-VB in areas requiring high voltage and current control, making it an ideal choice for high voltage power switches and power management systems.
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