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FQPF10N50CF-VB Product details

Product introduction:

FQPF10N50CF-VB MOSFET Product Introduction

FQPF10N50CF-VB is a high voltage, single N-channel power MOSFET in a TO220F package. The MOSFET can withstand drain-source voltage (VDS) up to 650V and gate-source voltage (VGS) of ±30V, and has a threshold voltage (Vth) of 3.5V. Its on-resistance (RDS(ON)) is 680mΩ at VGS=10V, and the maximum drain current (ID) is 12A. FQPF10N50CF-VB uses Plannar technology, which enables the MOSFET to have good performance and reliability in high voltage applications, and is suitable for use as a switching element and power management element.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 650V 3.5V 12A 680mΩ Plannar
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 650V 3.5V 12A Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 650V 3.5V 12A Plannar
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
FQPF10N50CF-VB MOSFET Detailed parameter description

- **Package type**: TO220F
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 680mΩ @ VGS=10V
- **Maximum drain current (ID)**: 12A
- **Technology**: Plannar technology
- **Power dissipation**: Please refer to the specific values in the product manual and perform power management according to the application scenario.

Domain and module applications:

FQPF10N50CF-VB MOSFET Application Fields and Module Examples

The high voltage tolerance and moderate current handling capability of FQPF10N50CF-VB MOSFET make it widely used in multiple fields and modules:

1. **High Voltage Switching Power Supply (SMPS)**: FQPF10N50CF-VB can be used in high voltage switching power supply designs, such as for AC-DC converters and DC-DC converters. In these applications, it can be used as a switching element, and its drain-source voltage of up to 650V enables it to handle high voltage inputs, while its on-resistance provides low power loss at appropriate VGS.

2. **Motor Drive System**: In high voltage motor drive systems, FQPF10N50CF-VB can stably control the starting and running of motors. Its high voltage handling capability and moderate current capability make it suitable for controlling high power motors, especially in high voltage environments.

3. **Power Inverter**: FQPF10N50CF-VB is suitable for power inverter design. Its 650V drain-source voltage enables it to cope with the high voltage requirements in the inverter, suitable for high power inverter applications such as solar inverters and UPS systems.

4. **Power Protection Circuit**: In the power protection circuit, FQPF10N50CF-VB can be used for overvoltage protection and surge protection. Its high voltage withstand capability and stable switching performance enable it to effectively protect the circuit from damage caused by high voltage surges.

5. **High Voltage Lighting System**: In high voltage lighting systems, such as high power LED drivers or other high voltage lighting equipment, FQPF10N50CF-VB can be used as a switching element. Its high voltage tolerance ensures stable operation in high voltage environments, suitable for large lighting solutions.

In summary, the FQPF10N50CF-VB MOSFET, with its high voltage tolerance and moderate current handling capability, is suitable for high-voltage switching power supplies, motor drive systems, power inverters, power protection circuits and high-voltage lighting systems, providing reliable and efficient switching solutions for these systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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