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FQP9N15-VB Product details

Product introduction:

Product Introduction

**FQP9N15-VB** is a high-performance N-Channel MOSFET with a TO220 package type. This MOSFET is designed for medium-to-high voltage and medium-current applications, with a maximum drain-source voltage (VDS) of 200V and a maximum gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 3V. At VGS = 10V, its on-resistance (RDS(ON)) is 270mΩ, and at VGS = 4.5V it is 310mΩ. The maximum leakage current (ID) is 10A. FQP9N15-VB uses Trench technology to provide good switching performance and low on-resistance, and is suitable for a variety of occasions requiring high voltage and high efficiency.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 200V 3V 10A 270mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 200V 3V 10A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 200V 3V 10A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
Detailed parameter description

- **Model**: FQP9N15-VB
- **Package**: TO220
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 200V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 310mΩ (VGS = 4.5V)
- 270mΩ (VGS = 10V)
- **Maximum leakage current (ID)**: 10A
- **Technology**: Trench

Domain and module applications:

Applications and Modules

The medium-to-high voltage and medium-current capabilities of the **FQP9N15-VB** make it very useful in multiple areas and modules:

1. **Power Management**: The FQP9N15-VB is suitable for switching and control applications in power management systems, such as DC-DC converters and power modules. Its low on-resistance and moderate leakage current capability enable it to efficiently handle power conversion, reduce power losses, and improve the energy efficiency of the system.

2. **Power Switching**: Due to its maximum drain-source voltage of 200V, the FQP9N15-VB is suitable for medium-to-high voltage power switching applications. It can effectively control the flow of current and is suitable for power switches and load control modules that require medium current and high voltage.

3. **Electric Vehicles**: In the battery management system and motor drive system of electric vehicles, the FQP9N15-VB can be used as a high-voltage switch. Its moderate on-resistance and leakage current capability are suitable for the high voltage and high current control requirements in electric vehicles, ensuring system stability and efficiency.

4. **Industrial Control**: This MOSFET is also suitable for industrial control systems, such as motor control and heating element control. It can operate stably at high voltage and medium current, suitable for industrial equipment that requires reliable control.

5. **Power Converters**: In various power converter applications, such as inverters and chargers, the high voltage and moderate current capabilities of the FQP9N15-VB can effectively handle the switch control in the power conversion process, ensuring efficient operation of the system.

These applications demonstrate the advantages of the FQP9N15-VB in occasions requiring medium and high voltage and efficient switch control, making it an ideal choice in the field of power management and power switching.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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