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FQP8N80C-VB Product details

Product introduction:

FQP8N80C-VB MOSFET Product Introduction

FQP8N80C-VB is a high voltage N-channel MOSFET in TO220 package, designed for high voltage and medium current applications. The MOSFET can withstand drain-source voltage (VDS) up to 800V and can handle continuous drain current (ID) up to 5A, suitable for stable operation in high voltage environment. Its on-resistance (RDS(ON)) is 1300mΩ at VGS=10V, and it adopts SJ_Multi-EPI technology, providing excellent switching performance and thermal management. FQP8N80C-VB is an ideal choice for high voltage power electronic systems with reliable performance and long life.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 800V 3.5V 5A 1300mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 800V 3.5V 5A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 800V 3.5V 5A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
FQP8N80C-VB MOSFET Detailed parameter description

- **Package type (Package): ** TO220
- **Configuration (Configuration): ** Single N-Channel (Single-N-Channel)
- **Drain-source voltage (VDS): ** 800V
- **Gate-source voltage (VGS): ** ±30V
- **Threshold voltage (Vth): ** 3.5V
- **On-resistance (RDS(ON)): ** 1300mΩ@VGS=10V
- **Continuous drain current (ID): ** 5A
- **Technology (Technology): ** SJ_Multi-EPI technology
- **Other features: ** High voltage tolerance, moderate on-resistance, good switching performance and thermal management

Domain and module applications:

FQP8N80C-VB MOSFET Application Fields and Modules

FQP8N80C-VB MOSFET is very suitable for high voltage applications. For example, in **high voltage switching power supplies**, this MOSFET can be used as an efficient switching element to handle the conversion and control of high voltage power supplies, and is widely used in power adapters, industrial power supplies, and communication equipment. In **inverters**, especially in high voltage solar inverters and uninterruptible power supply (UPS) systems, FQP8N80C-VB provides stable power conversion and management to ensure efficient operation of the system. In addition, it is also suitable for high voltage switches in **battery management systems** to manage the charging and discharging process and ensure the safety and performance of the battery. Applications in **high voltage lighting control systems** and **electric vehicle chargers** can also benefit from the high voltage and switching performance of this MOSFET.

With its high voltage tolerance and reliable performance, the FQP8N80C-VB MOSFET provides an excellent solution in high voltage power electronics applications and is an ideal choice for meeting high voltage needs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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