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FQP70N08-VB Product details

Product introduction:

Product Introduction

**FQP70N08-VB** is a high-performance N-Channel MOSFET with a TO220 package type. This MOSFET is designed for high current and high switching frequency applications, with a maximum drain-source voltage (VDS) of 80V and a maximum gate-source voltage (VGS) of ±20V. It has a low on-resistance of 7mΩ at VGS = 10V and 9mΩ at VGS = 4.5V. Its maximum drain current (ID) is 100A. FQP70N08-VB uses Trench technology to provide high efficiency and high reliability switching performance, and is suitable for applications requiring high current and low resistance.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 80V 3V 100A 7mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 80V 3V 100A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 80V 3V 100A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
Detailed parameter description

- **Model**: FQP70N08-VB
- **Package**: TO220
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 80V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 9mΩ (VGS = 4.5V)
- 7mΩ (VGS = 10V)
- **Maximum leakage current (ID)**: 100A
- **Technology**: Trench

Domain and module applications:

Applications and Modules

The high current handling capability and low on-resistance of the **FQP70N08-VB** make it very useful in the following areas and modules:

1. **High-Current Switching**: With its maximum drain current of up to 100A, the FQP70N08-VB is suitable for high-current switching applications, such as switching and controlling high-power power supplies. In situations where high current needs to be handled and low on-resistance is required, this MOSFET can effectively reduce power losses and improve system efficiency.

2. **Power Management**: In power management modules, the FQP70N08-VB can be used for efficient power conversion and distribution. Its low on-resistance helps reduce power losses and improve the energy efficiency of the overall system, and is particularly suitable for use in DC-DC converters and power modules.

3. **Motor Drives**: This MOSFET is suitable for use in motor drive systems, especially in applications where high current motors need to be controlled. Its high current capability and low on-resistance enable it to effectively control the operation of the motor while reducing power loss and heat generation.

4. **Power Amplifiers**: The high current handling capability and low on-resistance of the FQP70N08-VB make it suitable for high power amplifier applications. When stable and efficient power amplification is required, it can ensure accurate signal amplification and high-efficiency output.

5. **Automotive Electronics**: In automotive electronic systems, the FQP70N08-VB can be used for current control and power switching, such as battery management systems for electric vehicles and other high-current applications. Its high tolerance and low power consumption characteristics help improve the overall reliability and efficiency of automotive electronic systems.

These applications demonstrate the importance of the FQP70N08-VB in handling high current and high switching frequency applications. Its superior performance makes it an ideal choice for a variety of applications requiring high current and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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