Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
650V |
|
3.5V |
2A |
|
|
3120mΩ |
Plannar |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Plannar |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
650V |
|
3.5V |
2A |
|
Plannar |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
650V |
|
3.5V |
2A |
|
Plannar |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
FQP2N50-VB MOSFET Detailed parameter description
- **Package type**: TO220
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 3900mΩ @ VGS=4.5V
- 3120mΩ @ VGS=10V
- **Maximum drain current (ID)**: 2A
- **Technology**: Plannar
- **Power dissipation**: Please refer to the specific values in the product manual and perform power management according to the application scenario.
Domain and module applications:
FQP2N50-VB MOSFET Application Fields and Module Examples
FQP2N50-VB MOSFET is suitable for high voltage, low current applications, especially in switching circuits and energy conversion modules that need to handle high voltage. Here are some typical application fields and modules:
1. **High Voltage Switching Circuit**: FQP2N50-VB is very suitable for use in switching circuits that need to withstand high voltage, such as high voltage switching components in switching power supplies. Its 650V drain-source voltage enables it to operate stably in circuits with high voltage inputs and provide safe isolation and control.
2. **Power Converter**: In power conversion equipment, such as AC-DC converters or DC-DC converters, FQP2N50-VB can be used as a switching element on the high voltage side. Despite its high on-resistance, this MOSFET can effectively complete energy conversion tasks in situations where high voltage withstand capability is required.
3. **Lighting Device Driver**: The FQP2N50-VB is suitable for use in high-voltage LED lighting driver circuits, especially in commercial or industrial lighting applications. It is able to handle high-voltage drives, ensuring the stability and reliability of lighting equipment.
4. **Protection Circuit**: Due to its high voltage tolerance, the FQP2N50-VB can be applied to various high-voltage protection circuits, such as surge protection and voltage clamping circuits. It can act as a switch or current limiter when the voltage suddenly rises, protecting downstream circuit components from high voltage damage.
5. **Power Control Module**: In power management and control modules, this MOSFET can be used in high-voltage input and regulation circuits. Although its drain current carrying capacity is limited, its high voltage withstand characteristics make it perform well in high-voltage power control applications.
In summary, FQP2N50-VB MOSFET has become an important device in high-voltage applications due to its high voltage resistance and low current carrying capacity. It is particularly suitable for occasions that need to handle high voltage, such as high-voltage switching circuits, power converters, and protection circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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