Product introduction：
Product Introduction
FQP18N50V2-VB is a high voltage, high power N-channel MOSFET in TO220 package, designed for high voltage and high power applications. It has a maximum drain-source voltage (V_DS) of 650V, a maximum gate-source voltage (V_GS) of ±30V, and a threshold voltage (V_th) of 3.5V. The on-resistance (R_DS(ON)) of this MOSFET is 160mΩ at V_GS of 10V, and it can withstand a maximum drain current of 20A. FQP18N50V2-VB uses SJ_Multi-EPI technology, which gives it excellent performance and stability in handling high voltage and high power conditions, and is suitable for a variety of applications requiring efficient switching.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
650V |
|
3.5V |
20A |
|
|
160mΩ |
SJ_Multi-EPI |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
SJ_Multi-EPI |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
650V |
|
3.5V |
20A |
|
SJ_Multi-EPI |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
650V |
|
3.5V |
20A |
|
SJ_Multi-EPI |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
- **Package type**: TO220
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (V_DS)**: 650V
- **Maximum gate-source voltage (V_GS)**: ±30V
- **Threshold voltage (V_th)**: 3.5V
- **On-resistance (R_DS(ON))**: 160mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: 20A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
1. **High voltage switching circuits**:
The FQP18N50V2-VB is ideal for high voltage switching circuits such as high voltage DC-DC converters and power management systems. Due to its high drain-source voltage and low on-resistance, it can efficiently handle high voltage and high power switching operations, ensuring system stability and efficiency.
2. **Motor drive systems**:
In motor drive systems, the FQP18N50V2-VB can be used as a switching element for high voltage and high current loads. Its high current handling capability and high voltage tolerance make it suitable for power tools, electric vehicle drive systems, and industrial motor control, providing reliable switching performance.
3. **Power amplifier**:
This MOSFET is also very suitable for power amplifier applications. Its high voltage tolerance and low on-resistance make it an ideal switching element for high power audio amplifiers. It can handle high power signals, improve the performance and efficiency of the amplifier, and is suitable for high power audio and signal amplification applications.
4. **Power adapter and battery management system**:
In power adapter and battery management system, the high voltage and low on-resistance of FQP18N50V2-VB make it an important component for optimizing power conversion efficiency. It can reduce power consumption and improve system performance. It is suitable for various power conversion and battery management systems to ensure efficient and stable power supply.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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