Product introduction：
FQP15N50-VB MOSFET Product Introduction
FQP15N50-VB is a high-voltage N-channel MOSFET in a TO-220 package, suitable for a variety of power applications requiring high voltage and medium current handling capabilities. The device has a drain-source voltage (VDS) of up to 600V and a gate-source voltage (VGS) tolerance of ±30V, ensuring stable operation in harsh high-voltage environments. Its threshold voltage (Vth) is 3.5V, and its on-resistance (RDS(ON)) is 780mΩ at a VGS of 10V, providing reasonable conduction performance. FQP15N50-VB can handle a continuous drain current (ID) of up to 8A, and uses planar technology to provide reliable and stable performance, making it ideal for use in power management, lighting control, and motor drive.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
600V |
|
3.5V |
8A |
|
|
780mΩ |
Plannar |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Plannar |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
600V |
|
3.5V |
8A |
|
Plannar |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
600V |
|
3.5V |
8A |
|
Plannar |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
1. **Package: TO-220**
- **Description:** TO-220 is a common power semiconductor package with excellent heat dissipation performance and mechanical strength, easy to install and dissipate heat, suitable for medium and high power applications.
2. **Configuration: Single N-channel**
- **Description:** This MOSFET is a single N-channel device, using electrons as the main charge carrier, usually with high switching speed and low on-resistance, suitable for fast switching and high-efficiency applications.
3. **VDS (Drain-Source Voltage): 600V**
- **Description:** The maximum voltage that can be tolerated between the drain and source is 600V, making the device suitable for high voltage applications such as switching power supplies, inverters and industrial control systems.
4. **VGS (gate-source voltage): ±30V**
- **Note:** The maximum voltage between the gate and source is ±30V, which provides a wide gate drive voltage range and enhances the device's ruggedness and design flexibility.
5. **Vth (gate threshold voltage): 3.5V**
- **Note:** The minimum gate voltage required for the MOSFET to start conducting is 3.5V, ensuring reliable switching operation under normal drive voltages.
6. **RDS(ON) (on-resistance):**
- **1070mΩ @ VGS=4.5V**
- **Note:** When the gate voltage is 4.5V, the on-resistance between the drain and source is 1070mΩ, which is suitable for applications with low gate drive voltages, but the conduction loss is relatively high.
- **780mΩ @ VGS=10V**
- **Description:** When the gate voltage is 10V, the on-resistance is reduced to 780mΩ, providing higher conduction efficiency, suitable for high-efficiency application scenarios.
7. **ID (Drain Current): 8A**
- **Description:** The device can handle up to 8A of current continuously under certain conditions, suitable for medium-power load requirements, such as small and medium-sized motors and power systems.
8. **Technology: Planar**
- **Description:** Manufactured using traditional planar technology, it provides stable and reliable performance, is easy to control and manufacture, and is suitable for a wide range of applications.
Domain and module applications：
Applications and Module Examples
1. **Switching Mode Power Supply (SMPS):**
- FQP15N50-VB can be used in various switch mode power supplies, especially on the high voltage input side, such as industrial power supplies and telecom power supplies. Its high drain-source voltage of 600V and moderate on-resistance ensure safe and efficient conversion of power under high voltage conditions.
2. **Lighting Control:**
- This MOSFET is suitable for high voltage lighting systems, such as LED street lights and industrial lighting. The high withstand voltage characteristics enable it to directly control high voltage lamps, providing stable brightness adjustment and switching control.
3. **Inverter and Uninterruptible Power Supply (UPS):**
- In inverter and UPS systems, FQP15N50-VB can be used as the main switching element to convert DC power to AC power. Its high voltage and current handling capabilities ensure reliable power supply during grid fluctuations and load changes.
4. **Motor Drive:**
- This device can be used to drive small and medium-sized AC and DC motors for industrial automation equipment and household appliances. Its moderate on-resistance and current capability provide good efficiency and thermal performance.
5. **Power Factor Correction (PFC) Circuit:**
- In the PFC circuit that improves power efficiency and reduces harmonic distortion, the FQP15N50-VB can be used as a key switching element. Its high withstand voltage and fast switching characteristics help achieve efficient power conversion and improve power quality.
6. **Renewable Energy System:**
- In renewable energy conversion systems such as solar and wind power, this MOSFET can be used to control and regulate power transmission to ensure efficient and stable power supply from the power generation unit to the energy storage device or the power grid.
With the above characteristics and applications, the FQP15N50-VB provides a reliable and efficient solution for a variety of electronic systems with high voltage and medium power requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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