Product introduction：
Product Introduction
FQP13N60C-VB is an N-Channel MOSFET in TO220 package, designed for high voltage applications. With a drain-source voltage (VDS) of 650V, this MOSFET is suitable for high voltage environments. Its gate-source voltage (VGS) range is ±30V, providing flexible drive options. The threshold voltage (Vth) of FQP13N60C-VB is 3.5V, ensuring stable switching characteristics. Although its on-resistance (RDS(ON)) is 800mΩ (at VGS=10V), it is designed to effectively handle high voltage applications with a maximum leakage current of 12A. Manufactured using Plannar technology, this MOSFET has good electrical performance and reliability.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
650V |
|
3.5V |
12A |
|
|
800mΩ |
Plannar |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Plannar |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
650V |
|
3.5V |
12A |
|
Plannar |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
650V |
|
3.5V |
12A |
|
Plannar |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
- **Package**: TO220
- **Configuration**: Unipolar N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 800mΩ (VGS=10V)
- **Maximum leakage current (ID)**: 12A
- **Technology**: Plannar
Domain and module applications：
Applicable fields and modules
1. **High-voltage power switch**:
The high drain-source voltage of FQP13N60C-VB makes it suitable for high-voltage power switch applications. For example, in high-voltage DC-DC converters and high-voltage switching power supplies, this MOSFET can stably handle high voltages while ensuring the efficiency and safety of the power supply.
2. **Switching power supply**:
In switching power supply design, FQP13N60C-VB can be used as a high-voltage switching element due to its high-voltage resistance, such as in inverters and power modules, which can effectively control the conversion of electrical energy.
3. **Industrial equipment**:
This MOSFET is also suitable for use in industrial equipment, such as high-voltage motor control and power management systems, and can withstand high voltages and provide reliable switching performance to meet the needs of industrial environments.
4. **LED Driver**:
Although the on-resistance of FQP13N60C-VB is relatively high, in LED driver systems that require high voltage, such as high-power LED lighting applications, this MOSFET can ensure reliable current control and efficient energy transfer.
5. **Power Electronics**:
In the field of power electronics, especially in high-voltage inverters and power modules, the high voltage withstand characteristics and robust performance of FQP13N60C-VB make it an ideal choice for application scenarios that handle high voltage and high power.
The high voltage withstand capability and reliability of FQP13N60C-VB make it suitable for a variety of applications that require high voltage switching and high power handling, providing a stable and effective solution for high voltage power supplies and power electronics systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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