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FQP11N50CF-VB Product details

Product introduction:

Product Introduction

**FQP11N50CF-VB** is a high voltage N-Channel MOSFET in a TO220 package. It has a drain-source voltage (VDS) of up to 650V, suitable for high voltage circuits and power conversion applications. The gate-source voltage (VGS) of this MOSFET can reach a maximum of ±30V, and the threshold voltage (Vth) is 3.5V. Its on-resistance (RDS(ON)) is 500mΩ at VGS = 10V, providing excellent conductivity. The maximum drain current (ID) is 9A, suitable for medium and high power applications. FQP11N50CF-VB uses SJ_Multi-EPI technology, which helps optimize the electrical characteristics and thermal performance of the MOSFET.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 650V 3.5V 9A 500mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 650V 3.5V 9A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 650V 3.5V 9A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
Detailed parameter description

- **Model**: FQP11N50CF-VB
- **Package**: TO220
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 500mΩ (VGS = 10V)
- **Maximum leakage current (ID)**: 9A
- **Technology**: SJ_Multi-EPI

Domain and module applications:

Application fields and modules

**FQP11N50CF-VB** MOSFET's high voltage tolerance and good conductivity make it suitable for multiple fields and modules:

1. **Power Converters**: Due to its high drain-source voltage and low on-resistance, FQP11N50CF-VB is an ideal choice for high voltage power converters, including AC-DC converters and DC-DC converters. This MOSFET can effectively handle high voltage inputs and provide stable switching performance under high power conditions.

2. **Switching Power Supplies**: In switching power supplies, FQP11N50CF-VB can be used as the main switching element. Its high voltage tolerance and low on-resistance enable it to handle high power loads while improving the efficiency and reliability of the system.

3. **Inverters**: Used in inverter applications such as solar inverters and uninterruptible power supplies (UPS), this MOSFET provides high voltage tolerance and stable switching operation, suitable for converting DC power to AC power.

4. **Motor Drives**: In motor drive systems, the FQP11N50CF-VB can be used as a switching element in motor drive circuits, especially in applications requiring high voltage and high power, such as industrial motor drives.

5. **High Voltage Power Modules**: Suitable for high voltage power modules and high voltage power management circuits, the FQP11N50CF-VB provides stable performance and can handle power switching tasks under high current and high voltage conditions.

MOSFETs in these application areas can ensure system reliability and efficiency in high voltage and high power environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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