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FQP10N90C-VB Product details
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Product Introduction
The FQP10N90C-VB is an N-Channel MOSFET in a TO220F package designed for high voltage applications. It can withstand drain-source voltages (VDS) up to 900V, making it suitable for scenarios that require high voltage tolerance. The device has a gate-source voltage (VGS) range of ±30V, providing good gate drive flexibility. Its threshold voltage (Vth) is 3.5V, ensuring reliable switching characteristics under normal operating conditions. The FQP10N90C-VB has an on-resistance (RDS(ON)) of 560mΩ (at VGS=10V), which is relatively high but suitable for high voltage, high power applications. Manufactured using SJ_Multi-EPI technology, this MOSFET has excellent high voltage performance and reliability, with a maximum drain current of 9A.
The FQP10N90C-VB is an N-Channel MOSFET in a TO220F package designed for high voltage applications. It can withstand drain-source voltages (VDS) up to 900V, making it suitable for scenarios that require high voltage tolerance. The device has a gate-source voltage (VGS) range of ±30V, providing good gate drive flexibility. Its threshold voltage (Vth) is 3.5V, ensuring reliable switching characteristics under normal operating conditions. The FQP10N90C-VB has an on-resistance (RDS(ON)) of 560mΩ (at VGS=10V), which is relatively high but suitable for high voltage, high power applications. Manufactured using SJ_Multi-EPI technology, this MOSFET has excellent high voltage performance and reliability, with a maximum drain current of 9A.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 900V | 3.5V | 9A | 560mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package**: TO220F
- **Configuration**: Unipolar N-Channel
- **Drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 560mΩ (VGS=10V)
- **Maximum leakage current (ID)**: 9A
- **Technology**: SJ_Multi-EPI
- **Package**: TO220F
- **Configuration**: Unipolar N-Channel
- **Drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 560mΩ (VGS=10V)
- **Maximum leakage current (ID)**: 9A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applicable fields and modules
1. **High-voltage power conversion**:
The high voltage tolerance of FQP10N90C-VB makes it very suitable for use in high-voltage power converters, such as high-voltage DC-DC converters. It can handle voltages up to 900V and is suitable for power systems that require stable high-voltage output.
2. **Switching power supply**:
In switching power supply design, this MOSFET is suitable for high-voltage switching applications. For example, in the main switching link of the switching power supply, it can effectively handle high voltage without losing performance.
3. **Industrial control**:
In industrial equipment, especially high-voltage control systems and motor drive controls, FQP10N90C-VB provides stable high-voltage switching capabilities to ensure the reliability and safety of the system under high voltage conditions.
4. **Power Electronics**:
In the field of power electronics, such as high-voltage inverters and power modules, the high voltage withstand characteristics and reliability of this MOSFET make it an ideal choice for handling high voltage and high power applications.
5. **LED Driver**:
Despite the high RDS(ON), the FQP10N90C-VB can still be used in high-voltage LED drivers, especially those that need to operate in a high-voltage environment to ensure the stability and efficiency of the LED system.
The high voltage withstand capability and reliability of the FQP10N90C-VB make it suitable for various application scenarios that need to handle high voltage and high power, and it is a key component in high-voltage electronic design.
1. **High-voltage power conversion**:
The high voltage tolerance of FQP10N90C-VB makes it very suitable for use in high-voltage power converters, such as high-voltage DC-DC converters. It can handle voltages up to 900V and is suitable for power systems that require stable high-voltage output.
2. **Switching power supply**:
In switching power supply design, this MOSFET is suitable for high-voltage switching applications. For example, in the main switching link of the switching power supply, it can effectively handle high voltage without losing performance.
3. **Industrial control**:
In industrial equipment, especially high-voltage control systems and motor drive controls, FQP10N90C-VB provides stable high-voltage switching capabilities to ensure the reliability and safety of the system under high voltage conditions.
4. **Power Electronics**:
In the field of power electronics, such as high-voltage inverters and power modules, the high voltage withstand characteristics and reliability of this MOSFET make it an ideal choice for handling high voltage and high power applications.
5. **LED Driver**:
Despite the high RDS(ON), the FQP10N90C-VB can still be used in high-voltage LED drivers, especially those that need to operate in a high-voltage environment to ensure the stability and efficiency of the LED system.
The high voltage withstand capability and reliability of the FQP10N90C-VB make it suitable for various application scenarios that need to handle high voltage and high power, and it is a key component in high-voltage electronic design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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