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FQP10N80C-VB Product details

Product introduction:

FQP10N80C-VB MOSFET Product Introduction

FQP10N80C-VB is a high-voltage N-Channel MOSFET designed for high voltage and high power applications. This MOSFET adopts TO220 package and has a maximum drain-source voltage (VDS) of 800V, suitable for high voltage circuit applications. It uses SJ_Multi-EPI technology to achieve a lower on-resistance (RDS(ON)) of 850mΩ (VGS=10V), providing efficient switching performance. The threshold voltage (Vth) is 3.5V and the gate-source voltage (VGS) tolerance is ±30V, ensuring its stability under various operating conditions. The maximum drain current (ID) is 7A, making it suitable for medium and high power loads.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 800V 3.5V 7A 850mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 800V 3.5V 7A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 800V 3.5V 7A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
FQP10N80C-VB Detailed parameter description

- **Package:** TO220
- **Configuration:** Unipolar N-Channel
- **Drain-Source Voltage (VDS):** 800V
- **Gate-Source Voltage (VGS):** ±30V
- **Threshold Voltage (Vth):** 3.5V
- **On-Resistance (RDS(ON)):** 850mΩ @ VGS=10V
- **Continuous Drain Current (ID):** 7A
- **Technology:** SJ_Multi-EPI

Domain and module applications:

FQP10N80C-VB Application Examples

1. **Power Management System:** The FQP10N80C-VB is suitable for high-voltage power management systems such as switching power supplies and power converters. Its high drain-source voltage (VDS) and relatively low on-resistance (RDS(ON)) enable it to effectively handle high voltage and power requirements in power supplies, ensuring stability and efficiency.

2. **High-voltage Switching Circuit:** In high-voltage switching circuits, such as high-voltage inverters and high-voltage power modules, the FQP10N80C-VB can be used as a switching element. Its high VDS rating allows it to operate safely in high-voltage environments, while its low RDS(ON) provides lower power losses.

3. **Motor Drive Circuit:** This MOSFET can be used in motor drive circuits, especially high-voltage motor drive applications. Its high current carrying capability and high-voltage tolerance make it suitable for current switching operations in drive motors or controllers.

4. **Lighting equipment:** In high-intensity lighting equipment, such as industrial lighting and commercial lighting systems, FQP10N80C-VB can be used to control the switch of lighting lamps. Its high voltage capability and low on-resistance ensure reliability and efficiency in high-power lighting applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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