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FQN1N60C-VB Product details
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FQN1N60C-VB MOSFET Product Introduction
The FQN1N60C-VB is a high voltage N-channel MOSFET designed for applications that require high voltage tolerance. Packaged in a TO-92 housing, the MOSFET is suitable for a variety of power management and switching circuits. Its maximum drain-source voltage (VDS) is 600V, capable of handling high voltage loads. The device has a gate-source voltage (VGS) tolerance range of ±20V and a threshold voltage (Vth) of 2V, ensuring effective conduction at the appropriate gate voltage. Although its on-resistance (RDS(ON)) is high at 6667mΩ at VGS of 10V, it is still suitable for applications that require high voltage but are not so stringent on the on-resistance. The FQN1N60C-VB is capable of handling a continuous drain current (ID) of 1A and uses planar technology, making it suitable for a variety of high voltage application scenarios.
The FQN1N60C-VB is a high voltage N-channel MOSFET designed for applications that require high voltage tolerance. Packaged in a TO-92 housing, the MOSFET is suitable for a variety of power management and switching circuits. Its maximum drain-source voltage (VDS) is 600V, capable of handling high voltage loads. The device has a gate-source voltage (VGS) tolerance range of ±20V and a threshold voltage (Vth) of 2V, ensuring effective conduction at the appropriate gate voltage. Although its on-resistance (RDS(ON)) is high at 6667mΩ at VGS of 10V, it is still suitable for applications that require high voltage but are not so stringent on the on-resistance. The FQN1N60C-VB is capable of handling a continuous drain current (ID) of 1A and uses planar technology, making it suitable for a variety of high voltage application scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO92 | Single-N | 600V | 2V | 1A | 6667mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO92 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO92 | Single-N | 600V | 2V | 1A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO92 | Single-N | 600V | 2V | 1A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO92 | Single-N |
Detailed parameter description
1. **Package:** TO-92
- The TO-92 package is a small three-pin package suitable for low-power and medium-power applications. It provides a compact layout and simple mounting.
2. **Configuration:** Single N-channel
- This MOSFET is a single-channel N-type device that uses electrons as charge carriers and generally has faster switching speeds and lower on-resistance.
3. **VDS (Drain-Source Voltage):** 600V
- This is the maximum voltage that can be applied between the drain and the source. The 600V rating makes this MOSFET suitable for high-voltage applications and can operate reliably in high-voltage environments.
4. **VGS (Gate-Source Voltage):** ±20V
- This is the maximum voltage that can be applied between the gate and the source. The ±20V tolerance ensures that the MOSFET can handle large gate drive voltage changes.
5. **Vth (Gate Threshold Voltage):** 2V
- The voltage at which the MOSFET starts to conduct. The lower threshold voltage of 2V allows the device to conduct at a lower gate voltage, increasing sensitivity.
6. **RDS(ON) (On-Resistance):** 6667mΩ @ VGS=10V
- The resistance between the drain and source when the MOSFET is fully on. The higher RDS(ON) value of 6667mΩ means that the power loss when conducting is relatively large, but it is still acceptable in high voltage applications.
7. **ID (Drain Current):** 1A
- The maximum continuous current that the MOSFET can handle when in the fully on state. The 1A rating is suitable for high voltage applications with low current requirements.
8. **Technology:** Planar
- Planar technology involves the traditional design of MOSFET, providing stable performance and reliability, suitable for general high-voltage applications.
1. **Package:** TO-92
- The TO-92 package is a small three-pin package suitable for low-power and medium-power applications. It provides a compact layout and simple mounting.
2. **Configuration:** Single N-channel
- This MOSFET is a single-channel N-type device that uses electrons as charge carriers and generally has faster switching speeds and lower on-resistance.
3. **VDS (Drain-Source Voltage):** 600V
- This is the maximum voltage that can be applied between the drain and the source. The 600V rating makes this MOSFET suitable for high-voltage applications and can operate reliably in high-voltage environments.
4. **VGS (Gate-Source Voltage):** ±20V
- This is the maximum voltage that can be applied between the gate and the source. The ±20V tolerance ensures that the MOSFET can handle large gate drive voltage changes.
5. **Vth (Gate Threshold Voltage):** 2V
- The voltage at which the MOSFET starts to conduct. The lower threshold voltage of 2V allows the device to conduct at a lower gate voltage, increasing sensitivity.
6. **RDS(ON) (On-Resistance):** 6667mΩ @ VGS=10V
- The resistance between the drain and source when the MOSFET is fully on. The higher RDS(ON) value of 6667mΩ means that the power loss when conducting is relatively large, but it is still acceptable in high voltage applications.
7. **ID (Drain Current):** 1A
- The maximum continuous current that the MOSFET can handle when in the fully on state. The 1A rating is suitable for high voltage applications with low current requirements.
8. **Technology:** Planar
- Planar technology involves the traditional design of MOSFET, providing stable performance and reliability, suitable for general high-voltage applications.
Domain and module applications：
Applications and Module Examples
1. **High Voltage Switching Circuits:**
- The FQN1N60C-VB can be used in high voltage switching circuits such as switching elements in power switches and inverters. Its high VDS rating of 600V enables it to handle high voltage loads and is suitable for switching operations in high voltage environments.
2. **Power Supply:**
- In high voltage power supply systems, this MOSFET can be used as a switching element to help control and regulate power output. Its high withstand voltage characteristics enable it to operate safely in power supplies.
3. **Motor Drive:**
- This MOSFET can be used to drive high voltage motors, especially in applications where high voltage needs to be handled but current requirements are relatively low. Its high VDS and medium ID handling capabilities are suitable for such applications.
4. **Lighting Control:**
- In high voltage lighting control systems, the FQN1N60C-VB can be used as a switching element to control the switching of lamps. Its high voltage tolerance ensures reliable operation in high voltage lighting systems.
5. **Electrical Protection Devices:**
- This MOSFET can be used in various electrical protection devices, such as overcurrent protection and overvoltage protection in high voltage circuits. Its high voltage capability and tolerance range are suitable for these protection functions.
1. **High Voltage Switching Circuits:**
- The FQN1N60C-VB can be used in high voltage switching circuits such as switching elements in power switches and inverters. Its high VDS rating of 600V enables it to handle high voltage loads and is suitable for switching operations in high voltage environments.
2. **Power Supply:**
- In high voltage power supply systems, this MOSFET can be used as a switching element to help control and regulate power output. Its high withstand voltage characteristics enable it to operate safely in power supplies.
3. **Motor Drive:**
- This MOSFET can be used to drive high voltage motors, especially in applications where high voltage needs to be handled but current requirements are relatively low. Its high VDS and medium ID handling capabilities are suitable for such applications.
4. **Lighting Control:**
- In high voltage lighting control systems, the FQN1N60C-VB can be used as a switching element to control the switching of lamps. Its high voltage tolerance ensures reliable operation in high voltage lighting systems.
5. **Electrical Protection Devices:**
- This MOSFET can be used in various electrical protection devices, such as overcurrent protection and overvoltage protection in high voltage circuits. Its high voltage capability and tolerance range are suitable for these protection functions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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