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FQN1N50C-VB Product details
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Product Introduction
**FQN1N50C-VB** is a high voltage N-Channel MOSFET in TO92 package. Its main features include a drain-source voltage (VDS) of up to 600V, suitable for circuits requiring high voltage tolerance. This MOSFET has a gate-source voltage (Vth) of 2V and a maximum drain current (ID) of 1A, making it stable in high voltage applications. Its RDS(ON) is 6667mΩ, providing good conduction performance at VGS = 10V. FQN1N50C-VB is manufactured using planar technology (Plannar), which helps achieve its high voltage tolerance and reliability.
**FQN1N50C-VB** is a high voltage N-Channel MOSFET in TO92 package. Its main features include a drain-source voltage (VDS) of up to 600V, suitable for circuits requiring high voltage tolerance. This MOSFET has a gate-source voltage (Vth) of 2V and a maximum drain current (ID) of 1A, making it stable in high voltage applications. Its RDS(ON) is 6667mΩ, providing good conduction performance at VGS = 10V. FQN1N50C-VB is manufactured using planar technology (Plannar), which helps achieve its high voltage tolerance and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO92 | Single-N | 600V | 2V | 1A | 6667mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO92 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO92 | Single-N | 600V | 2V | 1A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO92 | Single-N | 600V | 2V | 1A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO92 | Single-N |
Detailed parameter description
- **Model**: FQN1N50C-VB
- **Package**: TO92
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 600V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2V
- **On-resistance (RDS(ON))**: 6667mΩ (VGS = 10V)
- **Maximum leakage current (ID)**: 1A
- **Technology**: Plannar technology
- **Model**: FQN1N50C-VB
- **Package**: TO92
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 600V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2V
- **On-resistance (RDS(ON))**: 6667mΩ (VGS = 10V)
- **Maximum leakage current (ID)**: 1A
- **Technology**: Plannar technology
Domain and module applications：
Applications and Modules
**FQN1N50C-VB** MOSFET is suitable for the following fields and modules due to its high withstand voltage characteristics:
1. **Switching Power Supplies**: In switching power supplies, FQN1N50C-VB can be used as a high voltage switching element. Its high voltage tolerance and low on-resistance make it suitable for handling high voltage and high power loads.
2. **Inverters**: In inverter circuits, this MOSFET can be used as the main switching device to provide stable current and high voltage control, suitable for applications such as solar inverters and uninterruptible power supplies (UPS).
3. **Motor Drivers**: In motor drive applications, FQN1N50C-VB can be used to control the power switch of the motor. Its high withstand voltage performance ensures the reliability of the motor driver under high voltage operation.
4. **High Voltage Power Conversion**: This MOSFET provides reliable switching functions in circuits that require high voltage and high power conversion, such as high voltage power modules and power electronic devices.
5. **Lighting Control**: Applicable to high voltage lighting systems, such as the control circuit of high pressure sodium lamps or metal halide lamps, FQN1N50C-VB can effectively control lighting loads.
**FQN1N50C-VB** MOSFET is suitable for the following fields and modules due to its high withstand voltage characteristics:
1. **Switching Power Supplies**: In switching power supplies, FQN1N50C-VB can be used as a high voltage switching element. Its high voltage tolerance and low on-resistance make it suitable for handling high voltage and high power loads.
2. **Inverters**: In inverter circuits, this MOSFET can be used as the main switching device to provide stable current and high voltage control, suitable for applications such as solar inverters and uninterruptible power supplies (UPS).
3. **Motor Drivers**: In motor drive applications, FQN1N50C-VB can be used to control the power switch of the motor. Its high withstand voltage performance ensures the reliability of the motor driver under high voltage operation.
4. **High Voltage Power Conversion**: This MOSFET provides reliable switching functions in circuits that require high voltage and high power conversion, such as high voltage power modules and power electronic devices.
5. **Lighting Control**: Applicable to high voltage lighting systems, such as the control circuit of high pressure sodium lamps or metal halide lamps, FQN1N50C-VB can effectively control lighting loads.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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