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FQI50N06-VB Product details
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Product Introduction
FQI50N06-VB is an N-Channel MOSFET in TO262 package, designed for high-performance power switching applications. This MOSFET has a drain-source voltage (VDS) of 60V and can withstand a maximum continuous drain current (ID) of 60A. Its gate-source voltage (VGS) range is ±20V, ensuring stability under various operating conditions. The threshold voltage (Vth) of the device is 1.7V, allowing it to work effectively even under low voltage drive. FQI50N06-VB is manufactured using Trench technology and has a low RDS(ON) of 15mΩ (at VGS=10V), which means lower on-resistance and lower power consumption during operation.
FQI50N06-VB is an N-Channel MOSFET in TO262 package, designed for high-performance power switching applications. This MOSFET has a drain-source voltage (VDS) of 60V and can withstand a maximum continuous drain current (ID) of 60A. Its gate-source voltage (VGS) range is ±20V, ensuring stability under various operating conditions. The threshold voltage (Vth) of the device is 1.7V, allowing it to work effectively even under low voltage drive. FQI50N06-VB is manufactured using Trench technology and has a low RDS(ON) of 15mΩ (at VGS=10V), which means lower on-resistance and lower power consumption during operation.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 1.7V | 60A | 15mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 1.7V | 60A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 1.7V | 60A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
Detailed parameter description
- **Package**: TO262
- **Configuration**: Unipolar N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 15mΩ (VGS=10V)
- **Maximum leakage current (ID)**: 60A
- **Technology**: Trench
- **Package**: TO262
- **Configuration**: Unipolar N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 15mΩ (VGS=10V)
- **Maximum leakage current (ID)**: 60A
- **Technology**: Trench
Domain and module applications：
Applicable fields and modules
1. **Power management**:
FQI50N06-VB is very suitable for use as a switching element in power management systems due to its low on-resistance and high current handling capability. For example, in high-efficiency power converters and voltage-regulated power modules, it can reduce power losses and improve overall energy efficiency.
2. **Automotive electronics**:
In automotive electronic systems, such as motor drive control and battery management systems, this MOSFET can provide reliable switching performance and high-voltage resistance to ensure system stability and safety.
3. **Consumer electronics**:
For high-power consumer electronics such as high-power LED drivers and battery chargers, FQI50N06-VB can effectively reduce heat loss and improve working efficiency.
4. **Industrial Equipment**:
In industrial applications, especially high-power drive and control systems, the high current carrying capacity and low on-resistance of FQI50N06-VB make it an ideal choice to meet a variety of demanding operating conditions.
5. **Switching Power Supply**:
In switching power supply design, the low RDS(ON) and high current capability of this MOSFET make it suitable for efficient energy conversion, especially in high-frequency switching applications.
FQI50N06-VB is a key component in high-power electronic applications due to its excellent performance parameters and wide application adaptability.
1. **Power management**:
FQI50N06-VB is very suitable for use as a switching element in power management systems due to its low on-resistance and high current handling capability. For example, in high-efficiency power converters and voltage-regulated power modules, it can reduce power losses and improve overall energy efficiency.
2. **Automotive electronics**:
In automotive electronic systems, such as motor drive control and battery management systems, this MOSFET can provide reliable switching performance and high-voltage resistance to ensure system stability and safety.
3. **Consumer electronics**:
For high-power consumer electronics such as high-power LED drivers and battery chargers, FQI50N06-VB can effectively reduce heat loss and improve working efficiency.
4. **Industrial Equipment**:
In industrial applications, especially high-power drive and control systems, the high current carrying capacity and low on-resistance of FQI50N06-VB make it an ideal choice to meet a variety of demanding operating conditions.
5. **Switching Power Supply**:
In switching power supply design, the low RDS(ON) and high current capability of this MOSFET make it suitable for efficient energy conversion, especially in high-frequency switching applications.
FQI50N06-VB is a key component in high-power electronic applications due to its excellent performance parameters and wide application adaptability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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