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FQI4N80-VB Product details
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FQI4N80-VB MOSFET Product Introduction
FQI4N80-VB is a high-voltage N-Channel MOSFET designed for applications requiring high voltage and low on-resistance. It uses a TO262 package with a maximum drain-source voltage (VDS) of 850V, which is very suitable for high-power circuits. This MOSFET uses Trench technology and has a low on-resistance (RDS(ON), VGS=10V) of 2700mΩ, which can achieve efficient switching operation. Its gate-source voltage (VGS) tolerance is ±30V and the threshold voltage (Vth) is 3.5V, ensuring reliable performance under different conditions. The maximum drain current (ID) is 4.1A, which is suitable for medium power loads.
FQI4N80-VB is a high-voltage N-Channel MOSFET designed for applications requiring high voltage and low on-resistance. It uses a TO262 package with a maximum drain-source voltage (VDS) of 850V, which is very suitable for high-power circuits. This MOSFET uses Trench technology and has a low on-resistance (RDS(ON), VGS=10V) of 2700mΩ, which can achieve efficient switching operation. Its gate-source voltage (VGS) tolerance is ±30V and the threshold voltage (Vth) is 3.5V, ensuring reliable performance under different conditions. The maximum drain current (ID) is 4.1A, which is suitable for medium power loads.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 850V | 3.5V | 4.1A | 2700mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 850V | 3.5V | 4.1A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 850V | 3.5V | 4.1A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
FQI4N80-VB Detailed parameter description
- **Package:** TO262
- **Configuration:** Unipolar N-Channel
- **Drain-Source Voltage (VDS):** 850V
- **Gate-Source Voltage (VGS):** ±30V
- **Threshold Voltage (Vth):** 3.5V
- **On-Resistance (RDS(ON)):** 2700mΩ @ VGS=10V
- **Continuous Drain Current (ID):** 4.1A
- **Technology:** Trench
- **Package:** TO262
- **Configuration:** Unipolar N-Channel
- **Drain-Source Voltage (VDS):** 850V
- **Gate-Source Voltage (VGS):** ±30V
- **Threshold Voltage (Vth):** 3.5V
- **On-Resistance (RDS(ON)):** 2700mΩ @ VGS=10V
- **Continuous Drain Current (ID):** 4.1A
- **Technology:** Trench
Domain and module applications：
FQI4N80-VB Application Examples
1. **Power Supply Units (PSUs):** The FQI4N80-VB is ideally suited for use in high voltage power supplies, especially in the main circuit of a flyback converter. Its high VDS rating enables it to handle the high voltage spikes common in these applications, ensuring reliable operation.
2. **Motor Control Circuits:** In motor control modules, especially those found in industrial and commercial applications, the FQI4N80-VB can be used to switch and control the current of high voltage motors. The high VDS and moderate current handling capabilities of this MOSFET make it suitable for driving motors with high voltage levels.
3. **Lighting Ballasts:** This MOSFET is also ideal for use in electronic ballasts, such as high intensity discharge (HID) lamps or fluorescent lamps. The high voltage capability ensures that it can meet the requirements of these lighting systems, while the low RDS(ON) ensures efficient operation with minimal heat generation.
4. **Inverter:** In high voltage inverters, especially for solar power systems or uninterruptible power supplies (UPS), the FQI4N80-VB can be used in the high voltage switching stage to provide the required isolation and control for efficient energy conversion.
1. **Power Supply Units (PSUs):** The FQI4N80-VB is ideally suited for use in high voltage power supplies, especially in the main circuit of a flyback converter. Its high VDS rating enables it to handle the high voltage spikes common in these applications, ensuring reliable operation.
2. **Motor Control Circuits:** In motor control modules, especially those found in industrial and commercial applications, the FQI4N80-VB can be used to switch and control the current of high voltage motors. The high VDS and moderate current handling capabilities of this MOSFET make it suitable for driving motors with high voltage levels.
3. **Lighting Ballasts:** This MOSFET is also ideal for use in electronic ballasts, such as high intensity discharge (HID) lamps or fluorescent lamps. The high voltage capability ensures that it can meet the requirements of these lighting systems, while the low RDS(ON) ensures efficient operation with minimal heat generation.
4. **Inverter:** In high voltage inverters, especially for solar power systems or uninterruptible power supplies (UPS), the FQI4N80-VB can be used in the high voltage switching stage to provide the required isolation and control for efficient energy conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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