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FQI13N06-VB Product details
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FQI13N06-VB MOSFET Product Introduction
FQI13N06-VB is a high-performance single N-channel power MOSFET with a TO262 package. The device has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, a threshold voltage (Vth) of 3.5V, an on-resistance (RDS(ON)) as low as 3mΩ@VGS=10V, and a maximum continuous drain current (ID) of 210A. This MOSFET is designed based on advanced Trench technology, which can provide extremely low conduction losses and efficient switching performance in high-power applications.
FQI13N06-VB is a high-performance single N-channel power MOSFET with a TO262 package. The device has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, a threshold voltage (Vth) of 3.5V, an on-resistance (RDS(ON)) as low as 3mΩ@VGS=10V, and a maximum continuous drain current (ID) of 210A. This MOSFET is designed based on advanced Trench technology, which can provide extremely low conduction losses and efficient switching performance in high-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | 3mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
FQI13N06-VB MOSFET Detailed parameter description
- **Package type**: TO262
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 3mΩ @ VGS=10V
- **Maximum drain current (ID)**: 210A
- **Technology**: Trench technology
- **Power dissipation**: Power dissipation is usually considered in the design, but the specific value needs to refer to the product manual.
- **Package type**: TO262
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 3mΩ @ VGS=10V
- **Maximum drain current (ID)**: 210A
- **Technology**: Trench technology
- **Power dissipation**: Power dissipation is usually considered in the design, but the specific value needs to refer to the product manual.
Domain and module applications：
FQI13N06-VB MOSFET Applications and Module Examples
FQI13N06-VB MOSFET is suitable for a variety of high current and low voltage applications, such as:
1. **Electric Vehicle (EV) Power Management System**: Due to its high current carrying capacity and low on-resistance, FQI13N06-VB is well suited for use in battery management and power control modules for electric vehicles. In these modules, the device can effectively reduce power losses and improve system efficiency.
2. **Motor Driver**: The high current capability of this MOSFET enables it to excel in motor driver applications, especially in scenarios that require fast switching and high efficiency, such as DC motor control in industrial automation equipment.
3. **Switching Power Supply (SMPS)**: FQI13N06-VB can be used as the main switching device in a switching power supply module. Its low on-resistance and high current capability help improve the efficiency and power density of the power supply, and is suitable for high-performance DC-DC converters and AC-DC adapters.
4. **Photovoltaic Inverter**: In photovoltaic systems, this MOSFET can be used in inverter modules to help convert DC power to AC power. Its low loss and efficient switching performance are essential for optimizing solar power generation efficiency.
Through its wide application in multiple fields, FQI13N06-VB has become a key component in efficient energy conversion and power management solutions.
FQI13N06-VB MOSFET is suitable for a variety of high current and low voltage applications, such as:
1. **Electric Vehicle (EV) Power Management System**: Due to its high current carrying capacity and low on-resistance, FQI13N06-VB is well suited for use in battery management and power control modules for electric vehicles. In these modules, the device can effectively reduce power losses and improve system efficiency.
2. **Motor Driver**: The high current capability of this MOSFET enables it to excel in motor driver applications, especially in scenarios that require fast switching and high efficiency, such as DC motor control in industrial automation equipment.
3. **Switching Power Supply (SMPS)**: FQI13N06-VB can be used as the main switching device in a switching power supply module. Its low on-resistance and high current capability help improve the efficiency and power density of the power supply, and is suitable for high-performance DC-DC converters and AC-DC adapters.
4. **Photovoltaic Inverter**: In photovoltaic systems, this MOSFET can be used in inverter modules to help convert DC power to AC power. Its low loss and efficient switching performance are essential for optimizing solar power generation efficiency.
Through its wide application in multiple fields, FQI13N06-VB has become a key component in efficient energy conversion and power management solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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