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FQI13N06L-VB Product details
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FQI13N06L-VB MOSFET Product Introduction
The FQI13N06L-VB is a single N-channel MOSFET in a TO262 package with excellent performance and high reliability for a variety of high-power applications. The MOSFET has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, and is manufactured using Trench technology to ensure low on-resistance (RDS(ON)) and high current handling capability, capable of carrying up to 210A of continuous drain current (ID). Its 3mΩ on-resistance performs well at a gate voltage of 10V, making it particularly suitable for applications requiring low conduction losses and high efficiency.
The FQI13N06L-VB is a single N-channel MOSFET in a TO262 package with excellent performance and high reliability for a variety of high-power applications. The MOSFET has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, and is manufactured using Trench technology to ensure low on-resistance (RDS(ON)) and high current handling capability, capable of carrying up to 210A of continuous drain current (ID). Its 3mΩ on-resistance performs well at a gate voltage of 10V, making it particularly suitable for applications requiring low conduction losses and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | 3mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
FQI13N06L-VB MOSFET Detailed parameter description
1. **Package type**: TO262
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 60V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**: 3mΩ @ VGS = 10V
7. **Continuous leakage current (ID)**: 210A
8. **Technology**: Trench
1. **Package type**: TO262
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 60V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**: 3mΩ @ VGS = 10V
7. **Continuous leakage current (ID)**: 210A
8. **Technology**: Trench
Domain and module applications：
Application fields and modules of FQI13N06L-VB MOSFET
FQI13N06L-VB MOSFET is suitable for a variety of fields and modules, especially those that require efficient energy management and power conversion. For example:
1. **Motor drive**: Due to its high current handling capability and low on-resistance, this MOSFET is very suitable for use in motor drive modules to provide efficient power control and reduce energy losses.
2. **DC-DC converter**: The low on-resistance and high gate-source voltage tolerance of FQI13N06L-VB make it an excellent performer in DC-DC converters, effectively managing voltage conversion and keeping power consumption low.
3. **Battery Management System (BMS)**: In battery management systems, the high current carrying capability and robust gate-source voltage characteristics of this MOSFET ensure safe and efficient battery charging and discharging processes.
4. **Power Management**: Suitable for various power management modules, including switching power supplies and uninterruptible power supplies (UPS), its low on-resistance helps improve overall system efficiency and reduce heat dissipation.
Through these application examples, FQI13N06L-VB shows its value as a key component in systems that require efficient energy management and power control.
FQI13N06L-VB MOSFET is suitable for a variety of fields and modules, especially those that require efficient energy management and power conversion. For example:
1. **Motor drive**: Due to its high current handling capability and low on-resistance, this MOSFET is very suitable for use in motor drive modules to provide efficient power control and reduce energy losses.
2. **DC-DC converter**: The low on-resistance and high gate-source voltage tolerance of FQI13N06L-VB make it an excellent performer in DC-DC converters, effectively managing voltage conversion and keeping power consumption low.
3. **Battery Management System (BMS)**: In battery management systems, the high current carrying capability and robust gate-source voltage characteristics of this MOSFET ensure safe and efficient battery charging and discharging processes.
4. **Power Management**: Suitable for various power management modules, including switching power supplies and uninterruptible power supplies (UPS), its low on-resistance helps improve overall system efficiency and reduce heat dissipation.
Through these application examples, FQI13N06L-VB shows its value as a key component in systems that require efficient energy management and power control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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