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FQH44N10-VB Product details
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Product Introduction
FQH44N10-VB is a high-performance N-channel MOSFET in TO247 package. It has high current carrying capacity and low on-resistance, suitable for use in high-power and high-voltage applications. The maximum drain-source voltage (V_DS) of this MOSFET is 100V, the gate-source voltage (V_GS) is ±20V, the threshold voltage (V_th) is 1.8V, the on-resistance (R_DS(ON)) is 35mΩ (@ V_GS=10V), and it can withstand a maximum drain current of 85A. Using advanced Trench technology, this MOSFET has low power consumption and high thermal stability while providing efficient switching performance.
FQH44N10-VB is a high-performance N-channel MOSFET in TO247 package. It has high current carrying capacity and low on-resistance, suitable for use in high-power and high-voltage applications. The maximum drain-source voltage (V_DS) of this MOSFET is 100V, the gate-source voltage (V_GS) is ±20V, the threshold voltage (V_th) is 1.8V, the on-resistance (R_DS(ON)) is 35mΩ (@ V_GS=10V), and it can withstand a maximum drain current of 85A. Using advanced Trench technology, this MOSFET has low power consumption and high thermal stability while providing efficient switching performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 1.8V | 85A | 35mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 1.8V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 1.8V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Package type**: TO247
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (V_DS)**: 100V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.8V
- **On-resistance (R_DS(ON))**: 35mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: 85A
- **Technology**: Trench
- **Package type**: TO247
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (V_DS)**: 100V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.8V
- **On-resistance (R_DS(ON))**: 35mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: 85A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **High-power switching circuits**:
FQH44N10-VB is suitable for high-power switching circuits such as DC-DC converters and power inverters. Its low on-resistance and high current handling capability enable it to operate stably under high load conditions, providing efficient power conversion and management. Especially in applications that require high efficiency and low power consumption, such as industrial power supplies and battery management systems, this MOSFET can effectively improve the performance of the system.
2. **Motor drive modules**:
In motor drive modules, FQH44N10-VB can handle high-current motor loads as a switching element. Its high current handling capability and low on-resistance ensure the stability and efficiency of motor drive, and is suitable for power tools, electric vehicle drive systems, and automation equipment.
3. **Power management and conversion**:
FQH44N10-VB performs well in power management and conversion applications, especially in power adapters and battery-powered systems. Its high voltage withstand capability and low on-resistance make it suitable for use as an efficient switching element, optimizing power conversion efficiency and reducing power consumption.
4. **Power amplifiers and audio equipment**:
In power amplifiers and high-power audio equipment, this MOSFET is able to handle high-current signals as an output stage switching element, providing efficient signal amplification. Its low on-resistance and high current handling capability help improve the performance and reliability of audio equipment, reduce heat generation and improve sound quality.
1. **High-power switching circuits**:
FQH44N10-VB is suitable for high-power switching circuits such as DC-DC converters and power inverters. Its low on-resistance and high current handling capability enable it to operate stably under high load conditions, providing efficient power conversion and management. Especially in applications that require high efficiency and low power consumption, such as industrial power supplies and battery management systems, this MOSFET can effectively improve the performance of the system.
2. **Motor drive modules**:
In motor drive modules, FQH44N10-VB can handle high-current motor loads as a switching element. Its high current handling capability and low on-resistance ensure the stability and efficiency of motor drive, and is suitable for power tools, electric vehicle drive systems, and automation equipment.
3. **Power management and conversion**:
FQH44N10-VB performs well in power management and conversion applications, especially in power adapters and battery-powered systems. Its high voltage withstand capability and low on-resistance make it suitable for use as an efficient switching element, optimizing power conversion efficiency and reducing power consumption.
4. **Power amplifiers and audio equipment**:
In power amplifiers and high-power audio equipment, this MOSFET is able to handle high-current signals as an output stage switching element, providing efficient signal amplification. Its low on-resistance and high current handling capability help improve the performance and reliability of audio equipment, reduce heat generation and improve sound quality.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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