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FQD9N25-VB Product details
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Product Introduction
FQD9N25-VB is a unipolar N-channel MOSFET in TO252 package. It has high voltage tolerance and low on-resistance, suitable for high power and high voltage switching applications. Its maximum drain-source voltage (V_DS) is 250V, and its maximum gate-source voltage (V_GS) is ±20V. Its threshold voltage (V_th) is 3.5V, with a low on-resistance of 176mΩ (R_DS(ON)@V_GS=10V), and can withstand a drain current of up to 17A. This MOSFET uses advanced Trench technology, which can effectively improve performance and reduce power consumption.
FQD9N25-VB is a unipolar N-channel MOSFET in TO252 package. It has high voltage tolerance and low on-resistance, suitable for high power and high voltage switching applications. Its maximum drain-source voltage (V_DS) is 250V, and its maximum gate-source voltage (V_GS) is ±20V. Its threshold voltage (V_th) is 3.5V, with a low on-resistance of 176mΩ (R_DS(ON)@V_GS=10V), and can withstand a drain current of up to 17A. This MOSFET uses advanced Trench technology, which can effectively improve performance and reduce power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3.5V | 17A | 176mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3.5V | 17A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3.5V | 17A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (V_DS)**: 250V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 3.5V
- **On-resistance (R_DS(ON))**: 176mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: 17A
- **Technology**: Trench
- **Package type**: TO252
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (V_DS)**: 250V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 3.5V
- **On-resistance (R_DS(ON))**: 176mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: 17A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
1. **Power management module**:
FQD9N25-VB is suitable for switching circuits in power management modules. Due to its high withstand voltage and low on-resistance, it can effectively control the switching of power supply and provide stable power supply. It performs well in DC-DC converters, power adapters and other power management applications, ensuring system reliability and high efficiency.
2. **Motor drive circuit**:
In motor drive circuits, FQD9N25-VB can be used as a motor switching element. Its high drain-source voltage and high drain current carrying capacity make it suitable for driving high-power motors, and can provide reliable switching performance during startup and operation.
3. **Automotive electronic applications**:
In automotive electronic systems, FQD9N25-VB is suitable for various switching applications such as lighting control and electric window drive. Its high voltage resistance enables it to withstand high voltage fluctuations in the automotive environment, while its low on-resistance reduces power consumption, improving the energy efficiency and reliability of the automotive system.
4. **Power Amplifier**:
This MOSFET can also be used in the output stage of a power amplifier. In the power amplifier design, it can be used as a switching element to handle high voltage and high current signals, ensuring signal stability and efficient operation of the amplifier.
1. **Power management module**:
FQD9N25-VB is suitable for switching circuits in power management modules. Due to its high withstand voltage and low on-resistance, it can effectively control the switching of power supply and provide stable power supply. It performs well in DC-DC converters, power adapters and other power management applications, ensuring system reliability and high efficiency.
2. **Motor drive circuit**:
In motor drive circuits, FQD9N25-VB can be used as a motor switching element. Its high drain-source voltage and high drain current carrying capacity make it suitable for driving high-power motors, and can provide reliable switching performance during startup and operation.
3. **Automotive electronic applications**:
In automotive electronic systems, FQD9N25-VB is suitable for various switching applications such as lighting control and electric window drive. Its high voltage resistance enables it to withstand high voltage fluctuations in the automotive environment, while its low on-resistance reduces power consumption, improving the energy efficiency and reliability of the automotive system.
4. **Power Amplifier**:
This MOSFET can also be used in the output stage of a power amplifier. In the power amplifier design, it can be used as a switching element to handle high voltage and high current signals, ensuring signal stability and efficient operation of the amplifier.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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