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FQD9N25TM_F085-VB Product details
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FQD9N25TM_F085-VB MOSFET Product Introduction
The FQD9N25TM_F085-VB is a high-performance N-channel MOSFET designed for applications that require high voltage handling and efficient switching. Packaged in a TO-252 housing, this MOSFET provides a rugged solution for power management in a variety of circuits. Its maximum drain-source voltage (VDS) is 250V and its gate-source voltage (VGS) tolerance range is ±20V, making it ideal for high voltage operation. The device has a threshold voltage (Vth) of 3.5V and an on-resistance (RDS(ON)) of only 176mΩ at a VGS of 10V, making it very efficient in power conversion and switching applications. The device is capable of handling up to 17A of continuous drain current (ID) and uses trench technology to minimize conduction losses and improve overall efficiency.
The FQD9N25TM_F085-VB is a high-performance N-channel MOSFET designed for applications that require high voltage handling and efficient switching. Packaged in a TO-252 housing, this MOSFET provides a rugged solution for power management in a variety of circuits. Its maximum drain-source voltage (VDS) is 250V and its gate-source voltage (VGS) tolerance range is ±20V, making it ideal for high voltage operation. The device has a threshold voltage (Vth) of 3.5V and an on-resistance (RDS(ON)) of only 176mΩ at a VGS of 10V, making it very efficient in power conversion and switching applications. The device is capable of handling up to 17A of continuous drain current (ID) and uses trench technology to minimize conduction losses and improve overall efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3.5V | 17A | 176mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3.5V | 17A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3.5V | 17A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
1. **Package:** TO-252
- The TO-252 package provides a compact surface mount solution with excellent thermal performance, ideal for high power applications.
2. **Configuration:** Single N-channel
- This MOSFET is a single-channel device that uses N-type conduction, that is, electrons as charge carriers, and generally has faster switching speeds and lower on-resistance than P-channel devices.
3. **VDS (Drain-Source Voltage):** 250V
- This is the maximum voltage that can be applied between the drain and source without causing breakdown. The 250V rating makes this MOSFET suitable for medium and high voltage applications.
4. **VGS (Gate-Source Voltage):** ±20V
- This is the maximum voltage that can be applied between the gate and source. The ±20V rating ensures that the MOSFET can handle significant gate drive voltage changes.
5. **Vth (Gate Threshold Voltage):** 3.5V
- The voltage required to turn on the MOSFET so that it begins conducting between the drain and source. The 3.5V threshold voltage ensures that the device turns on at a more standard gate voltage, balancing sensitivity and noise immunity.
6. **RDS(ON) (On Resistance):** 176mΩ @ VGS=10V
- The resistance between the drain and source when the MOSFET is fully turned on. The low RDS(ON) value of 176mΩ indicates that the device can be turned on with minimal power loss in power circuits, thereby improving efficiency.
7. **ID (Drain Current):** 17A
- The maximum continuous current that the MOSFET can handle when fully turned on. The 17A rating ensures that the device can manage larger current loads, making it suitable for power-intensive applications.
8. **Technology:** Trench
- Trench technology involves a specific MOSFET structure design that reduces on-resistance and capacitance, thereby reducing switching losses and improving efficiency.
1. **Package:** TO-252
- The TO-252 package provides a compact surface mount solution with excellent thermal performance, ideal for high power applications.
2. **Configuration:** Single N-channel
- This MOSFET is a single-channel device that uses N-type conduction, that is, electrons as charge carriers, and generally has faster switching speeds and lower on-resistance than P-channel devices.
3. **VDS (Drain-Source Voltage):** 250V
- This is the maximum voltage that can be applied between the drain and source without causing breakdown. The 250V rating makes this MOSFET suitable for medium and high voltage applications.
4. **VGS (Gate-Source Voltage):** ±20V
- This is the maximum voltage that can be applied between the gate and source. The ±20V rating ensures that the MOSFET can handle significant gate drive voltage changes.
5. **Vth (Gate Threshold Voltage):** 3.5V
- The voltage required to turn on the MOSFET so that it begins conducting between the drain and source. The 3.5V threshold voltage ensures that the device turns on at a more standard gate voltage, balancing sensitivity and noise immunity.
6. **RDS(ON) (On Resistance):** 176mΩ @ VGS=10V
- The resistance between the drain and source when the MOSFET is fully turned on. The low RDS(ON) value of 176mΩ indicates that the device can be turned on with minimal power loss in power circuits, thereby improving efficiency.
7. **ID (Drain Current):** 17A
- The maximum continuous current that the MOSFET can handle when fully turned on. The 17A rating ensures that the device can manage larger current loads, making it suitable for power-intensive applications.
8. **Technology:** Trench
- Trench technology involves a specific MOSFET structure design that reduces on-resistance and capacitance, thereby reducing switching losses and improving efficiency.
Domain and module applications：
Applications and Module Examples
1. **Power Modules:**
- The FQD9N25TM_F085-VB can be used in power modules, especially in high voltage DC-DC converters, where efficiency and reliability are critical. Its high VDS rating of 250V makes it well suited to handle the voltage stress in such applications.
2. **Motor Drive:**
- In motor control circuits, especially in automotive and industrial applications, this MOSFET is able to handle currents up to 17A, making it a good choice for driving motors that require strong switching capabilities.
3. **Battery Management Systems:**
- Low RDS(ON) and high current handling capabilities make the FQD9N25TM_F085-VB suitable for battery management systems in electric vehicles, where efficient power control and high reliability are critical.
4. **LED Driver:**
- This MOSFET can be used in LED driver circuits, especially in high-voltage LED light strings, where its high voltage tolerance and efficient switching capabilities offer significant advantages.
5. **Inverter and UPS Systems:**
- In inverter circuits and uninterruptible power supplies (UPS), the high voltage and current handling capabilities of the FQD9N25TM_F085-VB ensure efficient power conversion and distribution, making it a reliable component in these critical applications.
1. **Power Modules:**
- The FQD9N25TM_F085-VB can be used in power modules, especially in high voltage DC-DC converters, where efficiency and reliability are critical. Its high VDS rating of 250V makes it well suited to handle the voltage stress in such applications.
2. **Motor Drive:**
- In motor control circuits, especially in automotive and industrial applications, this MOSFET is able to handle currents up to 17A, making it a good choice for driving motors that require strong switching capabilities.
3. **Battery Management Systems:**
- Low RDS(ON) and high current handling capabilities make the FQD9N25TM_F085-VB suitable for battery management systems in electric vehicles, where efficient power control and high reliability are critical.
4. **LED Driver:**
- This MOSFET can be used in LED driver circuits, especially in high-voltage LED light strings, where its high voltage tolerance and efficient switching capabilities offer significant advantages.
5. **Inverter and UPS Systems:**
- In inverter circuits and uninterruptible power supplies (UPS), the high voltage and current handling capabilities of the FQD9N25TM_F085-VB ensure efficient power conversion and distribution, making it a reliable component in these critical applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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