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FQD8N25-VB Product details
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FQD8N25-VB MOSFET Overview
FQD8N25-VB is a high-performance single N-channel MOSFET in TO-252 package, designed for medium and high voltage applications. This MOSFET adopts trench technology, has a drain-source voltage capability of 250V and low on-resistance, suitable for various power management and switching applications, providing excellent electrical performance and efficient power control.
FQD8N25-VB is a high-performance single N-channel MOSFET in TO-252 package, designed for medium and high voltage applications. This MOSFET adopts trench technology, has a drain-source voltage capability of 250V and low on-resistance, suitable for various power management and switching applications, providing excellent electrical performance and efficient power control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3.5V | 17A | 176mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3.5V | 17A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3.5V | 17A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package:** TO-252
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 250V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 3.5V
- **On-resistance (RDS(ON)):** 176mΩ @ VGS = 10V
- **Drain current (ID):** 17A
- **Technology:** Trench technology (Trench)
FQD8N25-VB uses trench technology, which reduces on-resistance by optimizing the device structure while providing higher drain-source voltage capability, enabling it to perform well in a variety of power and switching applications.
- **Package:** TO-252
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 250V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 3.5V
- **On-resistance (RDS(ON)):** 176mΩ @ VGS = 10V
- **Drain current (ID):** 17A
- **Technology:** Trench technology (Trench)
FQD8N25-VB uses trench technology, which reduces on-resistance by optimizing the device structure while providing higher drain-source voltage capability, enabling it to perform well in a variety of power and switching applications.
Domain and module applications：
Application Examples
**1. Power Management: **
- FQD8N25-VB is suitable for power management modules such as DC-DC converters and power switches. Its 250V drain-source voltage capability enables it to operate stably in high voltage environments, while its low on-resistance helps improve system efficiency and reduce power loss.
**2. Motor Drive System: **
- In motor drive applications, this MOSFET can be used as a switch for high voltage motor control systems. Its 17A drain current capability and low on-resistance can effectively control the high voltage operation of the motor, improving the efficiency and reliability of the system.
**3. High Voltage Switch: **
- FQD8N25-VB can be used as a high voltage switch application, such as switch control of high voltage loads. Its high drain-source voltage capability and low on-resistance enable it to provide stable switching performance in high voltage environments, suitable for a variety of high voltage switch applications.
**4. LED lighting control:**
- This MOSFET is also suitable in LED lighting control systems. Especially in high-voltage LED lighting systems, it can provide stable switching performance and support efficient energy management with low on-resistance.
**5. Power protection circuits:**
- FQD8N25-VB can be used in power protection circuits such as overvoltage protection and power circuit breakers. Its 250V voltage capability and excellent switching performance ensure reliable protection under high voltage conditions, enhancing the safety and stability of the power system.
**1. Power Management: **
- FQD8N25-VB is suitable for power management modules such as DC-DC converters and power switches. Its 250V drain-source voltage capability enables it to operate stably in high voltage environments, while its low on-resistance helps improve system efficiency and reduce power loss.
**2. Motor Drive System: **
- In motor drive applications, this MOSFET can be used as a switch for high voltage motor control systems. Its 17A drain current capability and low on-resistance can effectively control the high voltage operation of the motor, improving the efficiency and reliability of the system.
**3. High Voltage Switch: **
- FQD8N25-VB can be used as a high voltage switch application, such as switch control of high voltage loads. Its high drain-source voltage capability and low on-resistance enable it to provide stable switching performance in high voltage environments, suitable for a variety of high voltage switch applications.
**4. LED lighting control:**
- This MOSFET is also suitable in LED lighting control systems. Especially in high-voltage LED lighting systems, it can provide stable switching performance and support efficient energy management with low on-resistance.
**5. Power protection circuits:**
- FQD8N25-VB can be used in power protection circuits such as overvoltage protection and power circuit breakers. Its 250V voltage capability and excellent switching performance ensure reliable protection under high voltage conditions, enhancing the safety and stability of the power system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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