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FQD7P06TM-VB Product details

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Product introduction：

FQD7P06TM-VB is a high-performance P-type MOSFET in TO252 package, designed for low voltage and high current applications. This MOSFET has a maximum drain-source voltage (VDS) of -60V and can handle a maximum drain current of -30A. Its threshold voltage (Vth) is -1.7V, and it can be reliably turned on even at relatively low gate-source voltages. FQD7P06TM-VB is manufactured using Trench technology, providing a lower on-resistance (RDS(ON)=90mΩ@VGS=10V), and performs well in high current and low voltage applications, and is suitable for applications requiring high switching efficiency and low conduction losses.

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FQD7P06TM-VBTO252 package outline Click for larger image

Product parameter：

VB Package Configuration VDS(V) VGS Vthyp（V） ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-P -60V -1.7V -30A 100mΩ 90mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp（V） ID(A) Rds18 Technology
TO252 Single-P -60V -1.7V -30A Trench
VB Package Configuration VDS(V) VGS Vthyp（V） ID(A) Rds6 Technology
TO252 Single-P -60V -1.7V -30A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-P

Detailed parameter description

- **Configuration**: Single channel P type
- **Drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 100mΩ@VGS=4.5V
- 90mΩ@VGS=10V
- **Maximum drain current (ID)**: -30A
- **Technology**: Trench (trench technology)
- **Package size**: TO252 package is usually 6.60mm x 8.60mm

Domain and module applications：


Application Fields and Modules

The high current handling capability and low on-resistance of the FQD7P06TM-VB MOSFET make it widely used in multiple fields and modules, including:

1. **Power Management**: In power management systems such as DC-DC converters and switching power supplies, the FQD7P06TM-VB is able to handle high current loads, provide stable switching performance and low conduction losses, and ensure efficient operation of the power system.

2. **Load Switch**: Suitable for applications with high current load switching, such as battery-powered devices, consumer electronics, and motor drives. Its low on-resistance reduces energy loss during switching, improving overall system efficiency and reliability.

3. **Motor Drive**: In motor drive systems, the FQD7P06TM-VB can be used to control the switching of P-type MOSFETs to ensure efficient operation of motors under low voltage conditions. This includes various small motor drives, power tools, and automotive motor control.

4. **Power Switch**: In power switching applications that require high current and low voltage, such as power inverters and power protection circuits, the FQD7P06TM-VB provides reliable switching performance, capable of handling high current loads and improving the overall performance of the system.

In summary, the high current handling capability and low on-resistance of the FQD7P06TM-VB MOSFET enable it to perform well in applications such as power management, load switching, motor drive, and power switching, providing efficient and reliable solutions for related fields.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support：

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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