中文
English
FQD7N65C-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
FQD7N65C-VB is a high voltage N-channel MOSFET in TO-252 package, designed for high voltage applications. The maximum drain-source voltage of this MOSFET is 650V, suitable for working in high voltage environment. It adopts SJ_Multi-EPI technology, has low on-resistance and high efficiency switching performance, suitable for power management, motor control and high voltage switching applications. It is designed to provide excellent current handling capability and thermal management to ensure stable operation under high voltage and high load conditions.
FQD7N65C-VB is a high voltage N-channel MOSFET in TO-252 package, designed for high voltage applications. The maximum drain-source voltage of this MOSFET is 650V, suitable for working in high voltage environment. It adopts SJ_Multi-EPI technology, has low on-resistance and high efficiency switching performance, suitable for power management, motor control and high voltage switching applications. It is designed to provide excellent current handling capability and thermal management to ensure stable operation under high voltage and high load conditions.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description
- **Package type**: TO-252
The TO-252 package is a surface mount package with good heat dissipation and mechanical strength, suitable for medium power applications.
- **Polarity**: Single N-channel
As an N-channel MOSFET, the device is used to handle the switching and control tasks of positive voltage loads.
- **Maximum drain-source voltage (VDS)**: 650V
The maximum drain-source voltage is 650V, making it suitable for use in high voltage environments and capable of handling high voltage loads.
- **Maximum gate-source voltage (VGS)**: ±30V
Supporting a gate-source voltage of ±30V provides the device with a large operating range and flexibility, suitable for various gate drive requirements.
- **Threshold voltage (Vth)**: 3.5V
The turn-on voltage is 3.5V, which is suitable for applications with medium gate drive voltages and ensures stable switching performance.
- **On-resistance (RDS(ON))**:
- **500mΩ @ VGS = 10V**
At 10V gate drive voltage, the on-resistance is 500mΩ, which is suitable for switching tasks with medium current loads.
- **Maximum drain current (ID)**: 9A
The maximum drain current is 9A, which is suitable for switching requirements with medium current loads.
- **Technology**: SJ_Multi-EPI
Using SJ_Multi-EPI technology, this process provides low on-resistance and high switching efficiency, which is suitable for efficient current control and power conversion in high voltage applications.
- **Package type**: TO-252
The TO-252 package is a surface mount package with good heat dissipation and mechanical strength, suitable for medium power applications.
- **Polarity**: Single N-channel
As an N-channel MOSFET, the device is used to handle the switching and control tasks of positive voltage loads.
- **Maximum drain-source voltage (VDS)**: 650V
The maximum drain-source voltage is 650V, making it suitable for use in high voltage environments and capable of handling high voltage loads.
- **Maximum gate-source voltage (VGS)**: ±30V
Supporting a gate-source voltage of ±30V provides the device with a large operating range and flexibility, suitable for various gate drive requirements.
- **Threshold voltage (Vth)**: 3.5V
The turn-on voltage is 3.5V, which is suitable for applications with medium gate drive voltages and ensures stable switching performance.
- **On-resistance (RDS(ON))**:
- **500mΩ @ VGS = 10V**
At 10V gate drive voltage, the on-resistance is 500mΩ, which is suitable for switching tasks with medium current loads.
- **Maximum drain current (ID)**: 9A
The maximum drain current is 9A, which is suitable for switching requirements with medium current loads.
- **Technology**: SJ_Multi-EPI
Using SJ_Multi-EPI technology, this process provides low on-resistance and high switching efficiency, which is suitable for efficient current control and power conversion in high voltage applications.
Domain and module applications：
3. Application fields and module description
1. **High voltage power converter**: FQD7N65C-VB is suitable for switching applications in high voltage power converters. Its 650V drain-source voltage capability enables it to work stably in high voltage power supplies, and is suitable for high voltage switch control in AC-DC converters and DC-DC converters, ensuring the efficiency and reliability of the power conversion process.
2. **Motor drive circuit**: In the motor drive circuit, this MOSFET is able to handle high voltage switching tasks with medium current loads. Its 500mΩ on-resistance and 9A maximum drain current make it suitable for motor drive and control circuits, providing reliable motor control and regulation functions.
3. **Power management system**: FQD7N65C-VB also performs well in power management systems. Its 650V withstand voltage capability and high-efficiency switching performance are suitable for high voltage control tasks in power management circuits, including power switching, current protection, and power regulation functions.
4. **Industrial Automation**: This MOSFET is widely used in industrial automation systems. Its 650V withstand voltage capability and 9A drain current make it suitable for a variety of medium-current high-voltage control tasks, including switching and regulation in automation equipment, ensuring stable operation of industrial processes.
5. **High-voltage protection circuit**: In high-voltage protection circuits, the FQD7N65C-VB can be used as a protection device to prevent overvoltage and overcurrent from damaging the circuit. Its high voltage withstand capability and stable switching performance ensure the safe and stable operation of the circuit.
These application scenarios demonstrate the wide applicability of the FQD7N65C-VB in high-voltage environments, especially in applications that need to handle high-voltage loads and efficient switching performance.
1. **High voltage power converter**: FQD7N65C-VB is suitable for switching applications in high voltage power converters. Its 650V drain-source voltage capability enables it to work stably in high voltage power supplies, and is suitable for high voltage switch control in AC-DC converters and DC-DC converters, ensuring the efficiency and reliability of the power conversion process.
2. **Motor drive circuit**: In the motor drive circuit, this MOSFET is able to handle high voltage switching tasks with medium current loads. Its 500mΩ on-resistance and 9A maximum drain current make it suitable for motor drive and control circuits, providing reliable motor control and regulation functions.
3. **Power management system**: FQD7N65C-VB also performs well in power management systems. Its 650V withstand voltage capability and high-efficiency switching performance are suitable for high voltage control tasks in power management circuits, including power switching, current protection, and power regulation functions.
4. **Industrial Automation**: This MOSFET is widely used in industrial automation systems. Its 650V withstand voltage capability and 9A drain current make it suitable for a variety of medium-current high-voltage control tasks, including switching and regulation in automation equipment, ensuring stable operation of industrial processes.
5. **High-voltage protection circuit**: In high-voltage protection circuits, the FQD7N65C-VB can be used as a protection device to prevent overvoltage and overcurrent from damaging the circuit. Its high voltage withstand capability and stable switching performance ensure the safe and stable operation of the circuit.
These application scenarios demonstrate the wide applicability of the FQD7N65C-VB in high-voltage environments, especially in applications that need to handle high-voltage loads and efficient switching performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
