中文
English
FQD7N60C-VB Product details
Back to previous pageProduct introduction：
FQD7N60C-VB MOSFET Product Introduction
FQD7N60C-VB is a high voltage N-channel MOSFET in TO-252 package, designed for high voltage and medium current switching applications. This MOSFET has a drain-source voltage (VDS) of 650V, suitable for high voltage environments. The gate-source voltage (VGS) is ±30V, providing a flexible control range. Its threshold voltage (Vth) is 3.5V, ensuring stable conduction at moderate gate voltage. The FQD7N60C-VB uses SJ_Multi-EPI technology, has an on-resistance (RDS(ON)) of 700mΩ (at a gate voltage of 10V), and can carry a continuous drain current (ID) of 7A, suitable for high voltage switching and power management applications.
FQD7N60C-VB is a high voltage N-channel MOSFET in TO-252 package, designed for high voltage and medium current switching applications. This MOSFET has a drain-source voltage (VDS) of 650V, suitable for high voltage environments. The gate-source voltage (VGS) is ±30V, providing a flexible control range. Its threshold voltage (Vth) is 3.5V, ensuring stable conduction at moderate gate voltage. The FQD7N60C-VB uses SJ_Multi-EPI technology, has an on-resistance (RDS(ON)) of 700mΩ (at a gate voltage of 10V), and can carry a continuous drain current (ID) of 7A, suitable for high voltage switching and power management applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | 700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description of FQD7N60C-VB
1. **Package**: TO-252
- Suitable for surface mounting, with good heat dissipation performance, suitable for high power and high voltage applications.
2. **Configuration**: Single N-channel
- Single N-channel MOSFET, suitable for low-side switching and load control, widely used in power management and switching circuits.
3. **Drain-Source Voltage (VDS)**: 650V
- The maximum drain-to-source voltage that the MOSFET can withstand, suitable for high voltage load control.
4. **Gate-Source Voltage (VGS)**: ±30V
- The maximum voltage allowed to be applied between the gate and the source, providing flexibility for control.
5. **Threshold Voltage (Vth)**: 3.5V
- Minimum gate voltage required to turn on the MOSFET, ensuring stable switching at typical gate voltages.
6. **On-resistance (RDS(ON))**: 700mΩ @ VGS=10V
- Drain-to-source resistance of the MOSFET at a gate voltage of 10V, affecting switching efficiency and power consumption.
7. **Continuous Drain Current (ID)**: 7A
- Maximum current that the MOSFET can carry under continuous operating conditions, suitable for medium current applications.
8. **Technology**: SJ_Multi-EPI
- Using SJ_Multi-EPI technology, it provides high withstand voltage and low on-resistance, suitable for high voltage and high power applications.
1. **Package**: TO-252
- Suitable for surface mounting, with good heat dissipation performance, suitable for high power and high voltage applications.
2. **Configuration**: Single N-channel
- Single N-channel MOSFET, suitable for low-side switching and load control, widely used in power management and switching circuits.
3. **Drain-Source Voltage (VDS)**: 650V
- The maximum drain-to-source voltage that the MOSFET can withstand, suitable for high voltage load control.
4. **Gate-Source Voltage (VGS)**: ±30V
- The maximum voltage allowed to be applied between the gate and the source, providing flexibility for control.
5. **Threshold Voltage (Vth)**: 3.5V
- Minimum gate voltage required to turn on the MOSFET, ensuring stable switching at typical gate voltages.
6. **On-resistance (RDS(ON))**: 700mΩ @ VGS=10V
- Drain-to-source resistance of the MOSFET at a gate voltage of 10V, affecting switching efficiency and power consumption.
7. **Continuous Drain Current (ID)**: 7A
- Maximum current that the MOSFET can carry under continuous operating conditions, suitable for medium current applications.
8. **Technology**: SJ_Multi-EPI
- Using SJ_Multi-EPI technology, it provides high withstand voltage and low on-resistance, suitable for high voltage and high power applications.
Domain and module applications：
Application Examples of FQD7N60C-VB
FQD7N60C-VB MOSFET is suitable for a variety of high voltage and medium current switching applications due to its high voltage withstand capability of 650V and 700mΩ on-resistance. Here are some specific application examples:
1. **High voltage power switch**: In high voltage power supply design, FQD7N60C-VB can be used as a high-side switch to control high voltage input or output to ensure stable operation and high efficiency of the power system.
2. **Power converter**: In DC-DC converters and other power conversion modules, FQD7N60C-VB is able to handle high voltage loads and support switching and current control during voltage conversion.
3. **Motor drive**: In drive circuits that need to control medium current motors, FQD7N60C-VB can effectively switch current to support motor starting, running and stopping, especially in high voltage environments.
4. **Industrial control systems**: In industrial automation and control systems, FQD7N60C-VB is used for load switching and power management to ensure reliable operation of equipment in high-voltage environments.
5. **Battery management system (BMS)**: In the battery management system, FQD7N60C-VB can handle load switching of high-voltage battery packs to protect the safety of batteries and systems.
FQD7N60C-VB MOSFET provides an efficient switching solution for high-voltage and medium-current applications with its high voltage tolerance and low on-resistance. Its SJ_Multi-EPI technology further improves switching efficiency and is suitable for various power and control application scenarios.
FQD7N60C-VB MOSFET is suitable for a variety of high voltage and medium current switching applications due to its high voltage withstand capability of 650V and 700mΩ on-resistance. Here are some specific application examples:
1. **High voltage power switch**: In high voltage power supply design, FQD7N60C-VB can be used as a high-side switch to control high voltage input or output to ensure stable operation and high efficiency of the power system.
2. **Power converter**: In DC-DC converters and other power conversion modules, FQD7N60C-VB is able to handle high voltage loads and support switching and current control during voltage conversion.
3. **Motor drive**: In drive circuits that need to control medium current motors, FQD7N60C-VB can effectively switch current to support motor starting, running and stopping, especially in high voltage environments.
4. **Industrial control systems**: In industrial automation and control systems, FQD7N60C-VB is used for load switching and power management to ensure reliable operation of equipment in high-voltage environments.
5. **Battery management system (BMS)**: In the battery management system, FQD7N60C-VB can handle load switching of high-voltage battery packs to protect the safety of batteries and systems.
FQD7N60C-VB MOSFET provides an efficient switching solution for high-voltage and medium-current applications with its high voltage tolerance and low on-resistance. Its SJ_Multi-EPI technology further improves switching efficiency and is suitable for various power and control application scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
