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FQD7N30TM-VB Product details
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FQD7N30TM-VB MOSFET Overview
FQD7N30TM-VB is a high voltage single N-channel MOSFET in TO-252 package, designed for high voltage and high power applications. This MOSFET uses SJ_Multi-EPI (Super Junction Multi-Epi) technology, with a high drain-source voltage capability of 650V and low on-resistance, enabling it to provide stable switching performance and efficient power management in high voltage environments.
FQD7N30TM-VB is a high voltage single N-channel MOSFET in TO-252 package, designed for high voltage and high power applications. This MOSFET uses SJ_Multi-EPI (Super Junction Multi-Epi) technology, with a high drain-source voltage capability of 650V and low on-resistance, enabling it to provide stable switching performance and efficient power management in high voltage environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package:** TO-252
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 650V
- **Gate-source voltage (VGS):** ±30V
- **Threshold voltage (Vth):** 3.5V
- **On-resistance (RDS(ON)):** 500mΩ @ VGS = 10V
- **Drain current (ID):** 9A
- **Technology:** SJ_Multi-EPI (Super Junction Multiple Epitaxial Layer)
FQD7N30TM-VB uses SJ_Multi-EPI technology, which can significantly reduce the on-resistance and improve the performance of MOSFET in high voltage environments, ensuring efficient switching operation and low power consumption.
- **Package:** TO-252
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 650V
- **Gate-source voltage (VGS):** ±30V
- **Threshold voltage (Vth):** 3.5V
- **On-resistance (RDS(ON)):** 500mΩ @ VGS = 10V
- **Drain current (ID):** 9A
- **Technology:** SJ_Multi-EPI (Super Junction Multiple Epitaxial Layer)
FQD7N30TM-VB uses SJ_Multi-EPI technology, which can significantly reduce the on-resistance and improve the performance of MOSFET in high voltage environments, ensuring efficient switching operation and low power consumption.
Domain and module applications：
Application Examples
**1. High Voltage Power Switch: **
- The FQD7N30TM-VB is suitable for high voltage power switch applications, such as high voltage DC-DC converters and power management modules. Its 650V drain-source voltage capability enables it to handle switching operations in high voltage environments, provide stable power control, and reduce energy loss.
**2. High Voltage Inverter: **
- In high voltage inverter applications, such as solar inverters or uninterruptible power supplies (UPS), the FQD7N30TM-VB is able to handle high voltage inputs and provide efficient energy conversion. Its low on-resistance and high voltage capability ensure the reliability and efficiency of the inverter system.
**3. Motor Drive System: **
- In motor control applications, this MOSFET is suitable for high voltage motor drive systems. Its 650V voltage tolerance and low on-resistance can effectively control high voltage motors, ensure stable system operation and improve drive efficiency.
**4. High-voltage LED lighting: **
- In high-voltage LED lighting systems, FQD7N30TM-VB can be used for switching of high-voltage LED lighting. Its high voltage withstand capability and low on-resistance ensure stable performance and efficient energy management in high-voltage environments.
**5. High-voltage power protection circuit: **
- This MOSFET is suitable for high-voltage power protection circuits, such as overvoltage protection and power circuit breakers. Its high voltage withstand capability and excellent switching performance can ensure reliable protection in high-voltage environments and enhance the safety and stability of power systems.
**1. High Voltage Power Switch: **
- The FQD7N30TM-VB is suitable for high voltage power switch applications, such as high voltage DC-DC converters and power management modules. Its 650V drain-source voltage capability enables it to handle switching operations in high voltage environments, provide stable power control, and reduce energy loss.
**2. High Voltage Inverter: **
- In high voltage inverter applications, such as solar inverters or uninterruptible power supplies (UPS), the FQD7N30TM-VB is able to handle high voltage inputs and provide efficient energy conversion. Its low on-resistance and high voltage capability ensure the reliability and efficiency of the inverter system.
**3. Motor Drive System: **
- In motor control applications, this MOSFET is suitable for high voltage motor drive systems. Its 650V voltage tolerance and low on-resistance can effectively control high voltage motors, ensure stable system operation and improve drive efficiency.
**4. High-voltage LED lighting: **
- In high-voltage LED lighting systems, FQD7N30TM-VB can be used for switching of high-voltage LED lighting. Its high voltage withstand capability and low on-resistance ensure stable performance and efficient energy management in high-voltage environments.
**5. High-voltage power protection circuit: **
- This MOSFET is suitable for high-voltage power protection circuits, such as overvoltage protection and power circuit breakers. Its high voltage withstand capability and excellent switching performance can ensure reliable protection in high-voltage environments and enhance the safety and stability of power systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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