中文
English
FQD7N20TF-VB Product details
Back to previous pageProduct introduction：
1. FQD7N20TF-VB Product Introduction
FQD7N20TF-VB is a single N-channel MOSFET in TO252 package, designed for high voltage applications, using Trench technology. This technology enables the MOSFET to provide low on-resistance and good switching performance under high voltage conditions. The MOSFET can withstand a drain-source voltage of up to 200V and supports a drain current of up to 10A, suitable for scenarios requiring high voltage and medium current control. Its low on-resistance ensures efficient current flow and lower power consumption, suitable for various power management and switching applications.
FQD7N20TF-VB is a single N-channel MOSFET in TO252 package, designed for high voltage applications, using Trench technology. This technology enables the MOSFET to provide low on-resistance and good switching performance under high voltage conditions. The MOSFET can withstand a drain-source voltage of up to 200V and supports a drain current of up to 10A, suitable for scenarios requiring high voltage and medium current control. Its low on-resistance ensures efficient current flow and lower power consumption, suitable for various power management and switching applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | 245mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. FQD7N20TF-VB Detailed parameter description
- **Package type**: TO252
- **Polarity configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 245mΩ @ VGS = 10V
- **Drain current (ID)**: 10A
- **Technology type**: Trench
- **Package type**: TO252
- **Polarity configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 245mΩ @ VGS = 10V
- **Drain current (ID)**: 10A
- **Technology type**: Trench
Domain and module applications：
3. Application fields and modules of FQD7N20TF-VB
1. **Power switch**: The high withstand voltage and low on-resistance of FQD7N20TF-VB make it very suitable for power switch applications. For example, it can be used in high-voltage DC-DC converters and AC-DC converters for efficient current switching and power management.
2. **Power management system**: In power management systems, this MOSFET can be used for load switching and power protection modules. Its high voltage handling capability and low on-resistance ensure stable performance and low power consumption during power regulation and protection.
3. **Industrial control**: FQD7N20TF-VB is suitable for high-voltage load switching and power distribution systems in industrial control applications. It is capable of handling higher voltages and currents, suitable for efficient switching control in industrial automation equipment.
4. **Lighting control**: In high voltage lighting systems, such as high voltage LED drivers and HID lamp control systems, FQD7N20TF-VB can provide stable switching performance, ensuring reliable lighting effects in high voltage environments. Its low on-resistance reduces power consumption and improves the overall efficiency of the system.
1. **Power switch**: The high withstand voltage and low on-resistance of FQD7N20TF-VB make it very suitable for power switch applications. For example, it can be used in high-voltage DC-DC converters and AC-DC converters for efficient current switching and power management.
2. **Power management system**: In power management systems, this MOSFET can be used for load switching and power protection modules. Its high voltage handling capability and low on-resistance ensure stable performance and low power consumption during power regulation and protection.
3. **Industrial control**: FQD7N20TF-VB is suitable for high-voltage load switching and power distribution systems in industrial control applications. It is capable of handling higher voltages and currents, suitable for efficient switching control in industrial automation equipment.
4. **Lighting control**: In high voltage lighting systems, such as high voltage LED drivers and HID lamp control systems, FQD7N20TF-VB can provide stable switching performance, ensuring reliable lighting effects in high voltage environments. Its low on-resistance reduces power consumption and improves the overall efficiency of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
