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FQD7N10TM-VB Product details
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1. Product Introduction
FQD7N10TM-VB is a high-performance N-type MOSFET in TO252 package, designed for low-voltage, high-efficiency applications. This MOSFET supports a maximum drain-source voltage (VDS) of 100V and can handle a maximum drain current of 15A. Its threshold voltage (Vth) is 1.8V, and it can be reliably turned on at a lower gate-source voltage. Manufactured using Trench technology, FQD7N10TM-VB provides a lower on-resistance (RDS(ON)=114mΩ@VGS=10V), making it perform well in high-current and low-voltage applications, and is suitable for applications requiring high switching efficiency and low conduction losses.
FQD7N10TM-VB is a high-performance N-type MOSFET in TO252 package, designed for low-voltage, high-efficiency applications. This MOSFET supports a maximum drain-source voltage (VDS) of 100V and can handle a maximum drain current of 15A. Its threshold voltage (Vth) is 1.8V, and it can be reliably turned on at a lower gate-source voltage. Manufactured using Trench technology, FQD7N10TM-VB provides a lower on-resistance (RDS(ON)=114mΩ@VGS=10V), making it perform well in high-current and low-voltage applications, and is suitable for applications requiring high switching efficiency and low conduction losses.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single channel N-type
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 114mΩ@VGS=10V
- **Maximum drain current (ID)**: 15A
- **Technology**: Trench
- **Package size**: TO252 package is usually 6.60mm x 8.60mm
- **Package type**: TO252
- **Configuration**: Single channel N-type
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 114mΩ@VGS=10V
- **Maximum drain current (ID)**: 15A
- **Technology**: Trench
- **Package size**: TO252 package is usually 6.60mm x 8.60mm
Domain and module applications：
3. Application fields and modules
The high-efficiency switching performance and low on-resistance of FQD7N10TM-VB MOSFET make it widely used in multiple fields and modules, including:
1. **Low voltage power management**: In low voltage DC-DC converters and switching power supplies, FQD7N10TM-VB can handle voltages up to 100V and provide stable switching performance to ensure the efficiency and reliability of the power system.
2. **Load switch**: Suitable for application scenarios that require low voltage load switching, such as computer power supplies, consumer electronic devices, etc. Its low on-resistance can reduce energy loss during switching and improve the overall efficiency of the system.
3. **Motor control**: In low voltage motor drive systems, FQD7N10TM-VB can be used for switch control to ensure stable operation of the motor under low voltage conditions. Widely used in small motor drives, electric vehicles and automation equipment.
4. **Power Management**: In power management and battery protection circuits, the high switching efficiency and low on-resistance of FQD7N10TM-VB make it suitable for efficient power control, extending battery life and improving overall system performance.
In summary, the low on-resistance and efficient switching characteristics of FQD7N10TM-VB MOSFET enable it to perform well in applications such as low-voltage power management, load switching, motor control and power management, providing reliable solutions for related fields.
The high-efficiency switching performance and low on-resistance of FQD7N10TM-VB MOSFET make it widely used in multiple fields and modules, including:
1. **Low voltage power management**: In low voltage DC-DC converters and switching power supplies, FQD7N10TM-VB can handle voltages up to 100V and provide stable switching performance to ensure the efficiency and reliability of the power system.
2. **Load switch**: Suitable for application scenarios that require low voltage load switching, such as computer power supplies, consumer electronic devices, etc. Its low on-resistance can reduce energy loss during switching and improve the overall efficiency of the system.
3. **Motor control**: In low voltage motor drive systems, FQD7N10TM-VB can be used for switch control to ensure stable operation of the motor under low voltage conditions. Widely used in small motor drives, electric vehicles and automation equipment.
4. **Power Management**: In power management and battery protection circuits, the high switching efficiency and low on-resistance of FQD7N10TM-VB make it suitable for efficient power control, extending battery life and improving overall system performance.
In summary, the low on-resistance and efficient switching characteristics of FQD7N10TM-VB MOSFET enable it to perform well in applications such as low-voltage power management, load switching, motor control and power management, providing reliable solutions for related fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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