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FQD6P25-VB Product details
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1. Product Introduction
FQD6P25-VB is a high voltage P-channel MOSFET in TO-252 package, designed for high voltage applications. Its maximum drain-source voltage is -250V, and it can work stably in negative voltage environment. This MOSFET adopts Trench technology, has low on-resistance and excellent switching performance, and is suitable for various power management, motor control and other high voltage switching applications.
FQD6P25-VB is a high voltage P-channel MOSFET in TO-252 package, designed for high voltage applications. Its maximum drain-source voltage is -250V, and it can work stably in negative voltage environment. This MOSFET adopts Trench technology, has low on-resistance and excellent switching performance, and is suitable for various power management, motor control and other high voltage switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -250V | -2V | -6A | 1000mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -250V | -2V | -6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -250V | -2V | -6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
2. Detailed parameter description
- **Package type**: TO-252
The TO-252 package is a surface mount package that provides good heat dissipation and mechanical strength, suitable for medium power applications.
- **Polarity**: Single P-channel
As a P-channel MOSFET, the device is used to handle the switching and control tasks of negative voltage loads.
- **Maximum drain-source voltage (VDS)**: -250V
The maximum drain-source voltage is -250V, suitable for applications in high voltage environments and capable of handling negative voltage loads.
- **Maximum gate-source voltage (VGS)**: ±20V
Supporting a gate-source voltage of ±20V provides a large operating range and flexibility, suitable for various gate drive requirements.
- **Threshold voltage (Vth)**: -2V
The turn-on voltage is -2V, suitable for applications handling medium gate drive voltages, ensuring stable switching performance.
- **On-resistance (RDS(ON))**:
- **1000mΩ @ VGS = 10V**
- **1200mΩ @ VGS = 4.5V**
At 10V gate drive voltage, the on-resistance is 1000mΩ, which is suitable for switching tasks with medium current loads.
- **Maximum drain current (ID)**: -6A
The maximum drain current is -6A, which is suitable for switching requirements to handle medium current loads.
- **Technology**: Trench process
Using Trench technology, this process provides lower on-resistance and higher switching efficiency, suitable for efficient current control and power conversion.
- **Package type**: TO-252
The TO-252 package is a surface mount package that provides good heat dissipation and mechanical strength, suitable for medium power applications.
- **Polarity**: Single P-channel
As a P-channel MOSFET, the device is used to handle the switching and control tasks of negative voltage loads.
- **Maximum drain-source voltage (VDS)**: -250V
The maximum drain-source voltage is -250V, suitable for applications in high voltage environments and capable of handling negative voltage loads.
- **Maximum gate-source voltage (VGS)**: ±20V
Supporting a gate-source voltage of ±20V provides a large operating range and flexibility, suitable for various gate drive requirements.
- **Threshold voltage (Vth)**: -2V
The turn-on voltage is -2V, suitable for applications handling medium gate drive voltages, ensuring stable switching performance.
- **On-resistance (RDS(ON))**:
- **1000mΩ @ VGS = 10V**
- **1200mΩ @ VGS = 4.5V**
At 10V gate drive voltage, the on-resistance is 1000mΩ, which is suitable for switching tasks with medium current loads.
- **Maximum drain current (ID)**: -6A
The maximum drain current is -6A, which is suitable for switching requirements to handle medium current loads.
- **Technology**: Trench process
Using Trench technology, this process provides lower on-resistance and higher switching efficiency, suitable for efficient current control and power conversion.
Domain and module applications：
3. Application fields and module description
1. **Power switch**: FQD6P25-VB can be used for high voltage power switch applications. Its -250V drain-source voltage capability and stable switching performance make it suitable for negative voltage switching tasks in DC-DC converters, ensuring the reliability and efficiency of the power conversion process.
2. **Motor control**: In motor control circuits, this MOSFET is able to handle negative voltage switching tasks with medium current loads. Its 1000mΩ on-resistance and -6A maximum drain current make it suitable for motor drive and control circuits, providing reliable motor control and regulation functions.
3. **Power management system**: FQD6P25-VB performs well in power management systems. Its -250V withstand voltage capability and stable switching performance are suitable for negative voltage control tasks in power management circuits, including power switching, power regulation and current protection functions.
4. **Load Switch**: In various load switch applications, the high voltage tolerance and stable performance of this MOSFET make it an ideal choice for handling high voltage load switches. It is suitable for switching load currents, including switching control of high voltage loads.
5. **High Voltage Protection Circuit**: In high voltage protection circuits, FQD6P25-VB can be used as a protection device to prevent overvoltage and overcurrent from damaging the circuit. Its high voltage tolerance and reliable switching performance ensure the safe and stable operation of the circuit.
These application scenarios demonstrate the wide applicability of FQD6P25-VB in high voltage environments, especially in applications that require handling negative voltage loads and stable switching performance.
1. **Power switch**: FQD6P25-VB can be used for high voltage power switch applications. Its -250V drain-source voltage capability and stable switching performance make it suitable for negative voltage switching tasks in DC-DC converters, ensuring the reliability and efficiency of the power conversion process.
2. **Motor control**: In motor control circuits, this MOSFET is able to handle negative voltage switching tasks with medium current loads. Its 1000mΩ on-resistance and -6A maximum drain current make it suitable for motor drive and control circuits, providing reliable motor control and regulation functions.
3. **Power management system**: FQD6P25-VB performs well in power management systems. Its -250V withstand voltage capability and stable switching performance are suitable for negative voltage control tasks in power management circuits, including power switching, power regulation and current protection functions.
4. **Load Switch**: In various load switch applications, the high voltage tolerance and stable performance of this MOSFET make it an ideal choice for handling high voltage load switches. It is suitable for switching load currents, including switching control of high voltage loads.
5. **High Voltage Protection Circuit**: In high voltage protection circuits, FQD6P25-VB can be used as a protection device to prevent overvoltage and overcurrent from damaging the circuit. Its high voltage tolerance and reliable switching performance ensure the safe and stable operation of the circuit.
These application scenarios demonstrate the wide applicability of FQD6P25-VB in high voltage environments, especially in applications that require handling negative voltage loads and stable switching performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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