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FQD6P25TF-VB Product details
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FQD6P25TF-VB MOSFET Product Introduction
FQD6P25TF-VB is a high voltage P-channel MOSFET in a TO-252 package designed for high voltage and medium current switching applications. This MOSFET has a drain-source voltage (VDS) of -250V, suitable for negative voltage environments. The gate-source voltage (VGS) is ±20V, providing a flexible control range. Its threshold voltage (Vth) is -2V, ensuring stable conduction at moderate gate voltages. The FQD6P25TF-VB uses Trench technology and has an on-resistance (RDS(ON)) of 1200mΩ (at 4.5V gate voltage) and 1000mΩ (at 10V gate voltage), capable of carrying a continuous drain current (ID) of -6A, making it ideal for high voltage load switching and switching applications.
FQD6P25TF-VB is a high voltage P-channel MOSFET in a TO-252 package designed for high voltage and medium current switching applications. This MOSFET has a drain-source voltage (VDS) of -250V, suitable for negative voltage environments. The gate-source voltage (VGS) is ±20V, providing a flexible control range. Its threshold voltage (Vth) is -2V, ensuring stable conduction at moderate gate voltages. The FQD6P25TF-VB uses Trench technology and has an on-resistance (RDS(ON)) of 1200mΩ (at 4.5V gate voltage) and 1000mΩ (at 10V gate voltage), capable of carrying a continuous drain current (ID) of -6A, making it ideal for high voltage load switching and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -250V | -2V | -6A | 1000mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -250V | -2V | -6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -250V | -2V | -6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description of FQD6P25TF-VB
1. **Package**: TO-252
- Suitable for surface mounting, with good heat dissipation performance, ensuring the stability and durability of MOSFET in power applications.
2. **Configuration**: Single P-channel
- Single P-channel MOSFET, suitable for high-side switch applications and load control, usually used in scenarios requiring negative voltage control.
3. **Drain-source voltage (VDS)**: -250V
- The maximum drain-to-source voltage allowed, suitable for the control of high-voltage loads.
4. **Gate-source voltage (VGS)**: ±20V
- The maximum voltage allowed to be applied between the gate and the source, providing a flexible control voltage range.
5. **Threshold voltage (Vth)**: -2V
- The minimum gate voltage required to turn on the MOSFET, suitable for stable switching in negative voltage environments.
6. **On-resistance (RDS(ON))**: 1200mΩ @ VGS=4.5V; 1000mΩ @ VGS=10V
- The drain-to-source resistance of the MOSFET at different gate voltages, affecting switching efficiency and power consumption.
7. **Continuous drain current (ID)**: -6A
- The maximum current that the MOSFET can carry under continuous operating conditions, suitable for medium current applications.
8. **Technology**: Trench
- Using Trench technology, it provides low on-resistance and high switching efficiency, reduces power consumption and improves system performance.
1. **Package**: TO-252
- Suitable for surface mounting, with good heat dissipation performance, ensuring the stability and durability of MOSFET in power applications.
2. **Configuration**: Single P-channel
- Single P-channel MOSFET, suitable for high-side switch applications and load control, usually used in scenarios requiring negative voltage control.
3. **Drain-source voltage (VDS)**: -250V
- The maximum drain-to-source voltage allowed, suitable for the control of high-voltage loads.
4. **Gate-source voltage (VGS)**: ±20V
- The maximum voltage allowed to be applied between the gate and the source, providing a flexible control voltage range.
5. **Threshold voltage (Vth)**: -2V
- The minimum gate voltage required to turn on the MOSFET, suitable for stable switching in negative voltage environments.
6. **On-resistance (RDS(ON))**: 1200mΩ @ VGS=4.5V; 1000mΩ @ VGS=10V
- The drain-to-source resistance of the MOSFET at different gate voltages, affecting switching efficiency and power consumption.
7. **Continuous drain current (ID)**: -6A
- The maximum current that the MOSFET can carry under continuous operating conditions, suitable for medium current applications.
8. **Technology**: Trench
- Using Trench technology, it provides low on-resistance and high switching efficiency, reduces power consumption and improves system performance.
Domain and module applications：
Application examples of FQD6P25TF-VB
FQD6P25TF-VB MOSFET is suitable for various application scenarios requiring high voltage and negative current control due to its high voltage tolerance of 250V and medium current carrying capacity. Here are some specific application examples:
1. **High voltage power switch**: In high voltage power supply systems, FQD6P25TF-VB can be used as a high-side switch to control high voltage input or output to ensure efficient and stable operation of the power supply system.
2. **Load switching**: In load switching applications such as battery management systems and load circuit breakers, FQD6P25TF-VB can reliably control load switching, protect circuits and improve system safety.
3. **Motor drive**: In drive circuits that need to control medium current motors, FQD6P25TF-VB can effectively switch current to support the starting, running and stopping of motors, especially in high voltage environments.
4. **Industrial control systems**: In industrial automation and control systems, FQD6P25TF-VB is used for load switching and power management to ensure reliable operation of equipment in high-voltage environments.
5. **Power converters**: In DC-DC converters and other power conversion modules, FQD6P25TF-VB is able to handle high-voltage loads and support switching and current control during voltage conversion.
FQD6P25TF-VB MOSFET, with its high voltage tolerance and low on-resistance, provides an efficient switching solution for negative voltage and medium current applications. Its Trench technology further improves switching efficiency and is suitable for a variety of power and control application scenarios.
FQD6P25TF-VB MOSFET is suitable for various application scenarios requiring high voltage and negative current control due to its high voltage tolerance of 250V and medium current carrying capacity. Here are some specific application examples:
1. **High voltage power switch**: In high voltage power supply systems, FQD6P25TF-VB can be used as a high-side switch to control high voltage input or output to ensure efficient and stable operation of the power supply system.
2. **Load switching**: In load switching applications such as battery management systems and load circuit breakers, FQD6P25TF-VB can reliably control load switching, protect circuits and improve system safety.
3. **Motor drive**: In drive circuits that need to control medium current motors, FQD6P25TF-VB can effectively switch current to support the starting, running and stopping of motors, especially in high voltage environments.
4. **Industrial control systems**: In industrial automation and control systems, FQD6P25TF-VB is used for load switching and power management to ensure reliable operation of equipment in high-voltage environments.
5. **Power converters**: In DC-DC converters and other power conversion modules, FQD6P25TF-VB is able to handle high-voltage loads and support switching and current control during voltage conversion.
FQD6P25TF-VB MOSFET, with its high voltage tolerance and low on-resistance, provides an efficient switching solution for negative voltage and medium current applications. Its Trench technology further improves switching efficiency and is suitable for a variety of power and control application scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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