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FQD6N50C-VB Product details
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FQD6N50C-VB MOSFET Product Introduction
**FQD6N50C-VB** is a high voltage N-type MOSFET in TO-252 package, manufactured using SJ_Multi-EPI technology. This MOSFET can withstand drain-source voltage (VDS) up to 650V, suitable for high voltage switching and control applications. Its gate-source voltage (VGS) range is ±30V, and the threshold voltage (Vth) is 3.5V. At VGS = 10V, the on-resistance (RDS(ON)) is 1000mΩ and the maximum drain current (ID) is 5A, which is suitable for applications that handle high voltage and medium current.
**FQD6N50C-VB** is a high voltage N-type MOSFET in TO-252 package, manufactured using SJ_Multi-EPI technology. This MOSFET can withstand drain-source voltage (VDS) up to 650V, suitable for high voltage switching and control applications. Its gate-source voltage (VGS) range is ±30V, and the threshold voltage (Vth) is 3.5V. At VGS = 10V, the on-resistance (RDS(ON)) is 1000mΩ and the maximum drain current (ID) is 5A, which is suitable for applications that handle high voltage and medium current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO-252
- **Configuration**: Single tube N-type
- **VDS (drain-source voltage)**: 650V
- **VGS (gate-source voltage)**: ±30V
- **Vth (threshold voltage)**: 3.5V
- **RDS(ON) (on-resistance)**: 1000mΩ @ VGS = 10V
- **ID (continuous leakage current)**: 5A
- **Technology**: SJ_Multi-EPI
- **Package**: TO-252
- **Configuration**: Single tube N-type
- **VDS (drain-source voltage)**: 650V
- **VGS (gate-source voltage)**: ±30V
- **Vth (threshold voltage)**: 3.5V
- **RDS(ON) (on-resistance)**: 1000mΩ @ VGS = 10V
- **ID (continuous leakage current)**: 5A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Application Examples
**FQD6N50C-VB** MOSFET's high voltage and medium current characteristics make it widely used in multiple fields and modules, as follows:
1. **High voltage switching power supply**: In high voltage switch mode power supply (SMPS), FQD6N50C-VB can handle voltages up to 650V as a switching element, suitable for switching control of high voltage power supplies, providing efficient power management.
2. **Industrial control system**: In high voltage control and switching circuits in industrial equipment, FQD6N50C-VB can be used for high voltage drive and load control, such as high voltage switching applications in industrial automation systems.
3. **Lighting system**: In high voltage lighting systems, such as fluorescent lamp electronic ballasts, FQD6N50C-VB can be used as a high voltage switching element to ensure stable lighting performance and efficient energy management.
4. **Inverter Application**: In inverter systems that need to handle high voltages (such as solar inverters), the FQD6N50C-VB is able to provide efficient power conversion and switch control, suitable for high voltage power conversion needs.
These applications demonstrate the reliability and applicability of the FQD6N50C-VB in high voltage switching and control applications.
**FQD6N50C-VB** MOSFET's high voltage and medium current characteristics make it widely used in multiple fields and modules, as follows:
1. **High voltage switching power supply**: In high voltage switch mode power supply (SMPS), FQD6N50C-VB can handle voltages up to 650V as a switching element, suitable for switching control of high voltage power supplies, providing efficient power management.
2. **Industrial control system**: In high voltage control and switching circuits in industrial equipment, FQD6N50C-VB can be used for high voltage drive and load control, such as high voltage switching applications in industrial automation systems.
3. **Lighting system**: In high voltage lighting systems, such as fluorescent lamp electronic ballasts, FQD6N50C-VB can be used as a high voltage switching element to ensure stable lighting performance and efficient energy management.
4. **Inverter Application**: In inverter systems that need to handle high voltages (such as solar inverters), the FQD6N50C-VB is able to provide efficient power conversion and switch control, suitable for high voltage power conversion needs.
These applications demonstrate the reliability and applicability of the FQD6N50C-VB in high voltage switching and control applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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