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FQD6N40C-VB Product details

Product introduction:

1. Product Introduction

FQD6N40C-VB is a high-voltage N-type MOSFET in TO252 package, designed for high voltage and high power applications. This MOSFET supports drain-source voltage (VDS) up to 650V and can handle a maximum drain current of 5A. The threshold voltage (Vth) is 3.5V, ensuring stable turn-on at appropriate gate-source voltage. Its on-resistance is 1000mΩ@VGS=10V and is manufactured using SJ_Multi-EPI technology, providing good high voltage handling capability and efficient switching performance, suitable for a variety of high voltage application scenarios.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 650V 3.5V 5A 1000mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 650V 3.5V 5A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 650V 3.5V 5A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
2. Detailed parameter description

- **Package type**: TO252
- **Configuration**: Single channel N-type
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ@VGS=10V
- **Maximum drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI (multi-layer enhanced technology)
- **Package size**: TO252 package is usually 6.60mm x 8.60mm

Domain and module applications:

3. Application fields and modules

The high voltage tolerance and efficient switching performance of FQD6N40C-VB MOSFET make it widely used in multiple fields and modules, including:

1. **High voltage power management**: In high voltage power management systems, such as high voltage DC-DC converters and switching power supplies, FQD6N40C-VB is able to handle voltages up to 650V, provide stable switching performance, and ensure the efficiency and reliability of the power system.

2. **Load switch**: Suitable for application scenarios that require high voltage load switching, such as industrial power control and load switching. Its high voltage handling capability and low on-resistance enable it to effectively control high voltage loads and ensure the reliability of switching operations.

3. **Motor drive**: In high voltage motor drive systems, FQD6N40C-VB can be used to control the switching of high voltage motors to ensure the stable operation of motors under high voltage conditions. This includes various industrial motor and drive applications.

4. **Power Inverter**: In power inverters and frequency converters, FQD6N40C-VB can be used as a high voltage switching element to handle high voltage power conversion and improve the efficiency and reliability of the inverter. This makes it suitable for applications such as solar inverters, battery inverters and UPS systems.

In summary, the high voltage handling capability and reliable switching characteristics of FQD6N40C-VB MOSFET enable it to perform well in applications that require high voltage handling and high efficiency performance, such as high voltage power management, load switching, motor drives and power inverters.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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