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FQD6N25-VB Product details
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FQD6N25-VB Product Introduction
FQD6N25-VB is a high-performance N-channel power MOSFET in a TO252 package designed for medium voltage and current applications. The device has a drain-source voltage (VDS) of 250V and supports a gate-source voltage (VGS) of ±20V. Its typical turn-on voltage is 3V and its on-resistance is 640mΩ at VGS=10V. The maximum drain current of FQD6N25-VB is 4.5A, and it uses Trench technology, making it suitable for switching applications requiring medium voltage and current, such as power management and power conversion modules.
FQD6N25-VB is a high-performance N-channel power MOSFET in a TO252 package designed for medium voltage and current applications. The device has a drain-source voltage (VDS) of 250V and supports a gate-source voltage (VGS) of ±20V. Its typical turn-on voltage is 3V and its on-resistance is 640mΩ at VGS=10V. The maximum drain current of FQD6N25-VB is 4.5A, and it uses Trench technology, making it suitable for switching applications requiring medium voltage and current, such as power management and power conversion modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3V | 4.5A | 640mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3V | 4.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3V | 4.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
FQD6N25-VB Detailed parameter description
1. **Package type**: TO252
The TO252 package is suitable for surface mounting, providing good heat dissipation and compact design, suitable for various electronic devices.
2. **Polarity**: Single N-channel
As a single N-channel MOSFET, the FQD6N25-VB is suitable for low-side switching applications, which can efficiently control the flow of current.
3. **Drain-source voltage (VDS)**: 250V
The maximum drain-source voltage of this MOSFET is 250V, which can stably operate in a medium voltage environment.
4. **Gate-source voltage (VGS)**: ±20V
Supports gate-source voltages up to ±20V, ensuring stability and reliability under various operating conditions.
5. **Throw-on voltage (Vth)**: 3V
The typical turn-on voltage is 3V, which allows the MOSFET to be effectively turned on at a lower gate voltage, improving switching efficiency.
6. **On-resistance (RDS(ON))**: 640mΩ @ VGS=10V
When VGS=10V, the on-resistance is 640mΩ, which is suitable for medium voltage and current switching applications.
7. **Drain current (ID)**: 4.5A
The maximum drain current is 4.5A, which is suitable for medium current switching applications.
8. **Technology**: Trench
Using Trench technology, it provides lower on-resistance and efficient switching performance, suitable for medium voltage applications.
1. **Package type**: TO252
The TO252 package is suitable for surface mounting, providing good heat dissipation and compact design, suitable for various electronic devices.
2. **Polarity**: Single N-channel
As a single N-channel MOSFET, the FQD6N25-VB is suitable for low-side switching applications, which can efficiently control the flow of current.
3. **Drain-source voltage (VDS)**: 250V
The maximum drain-source voltage of this MOSFET is 250V, which can stably operate in a medium voltage environment.
4. **Gate-source voltage (VGS)**: ±20V
Supports gate-source voltages up to ±20V, ensuring stability and reliability under various operating conditions.
5. **Throw-on voltage (Vth)**: 3V
The typical turn-on voltage is 3V, which allows the MOSFET to be effectively turned on at a lower gate voltage, improving switching efficiency.
6. **On-resistance (RDS(ON))**: 640mΩ @ VGS=10V
When VGS=10V, the on-resistance is 640mΩ, which is suitable for medium voltage and current switching applications.
7. **Drain current (ID)**: 4.5A
The maximum drain current is 4.5A, which is suitable for medium current switching applications.
8. **Technology**: Trench
Using Trench technology, it provides lower on-resistance and efficient switching performance, suitable for medium voltage applications.
Domain and module applications：
Application fields and module examples
1. **Power management system**:
FQD6N25-VB can be used as a switch controller in the power management system for the switching operation of the power supply. Its 250V drain-source voltage and 640mΩ on-resistance enable it to effectively control the switching state of the power supply and improve the efficiency and stability of the system.
2. **DC-DC converter**:
In DC-DC converter applications, FQD6N25-VB can be used as a switch controller to manage the power conversion process. Suitable for medium voltage converters, it can provide stable conversion performance to ensure the effective transfer and conversion of power.
3. **Motor drive**:
This MOSFET is suitable for medium current motor drive systems, especially in medium voltage environments, by providing stable switching control to improve the operating efficiency and performance of the motor.
4. **High-efficiency lighting systems**:
In high-efficiency lighting systems, such as LED drive circuits, FQD6N25-VB can be used as a switch control device to manage the switch state of the lighting module, provide stable drive current, and optimize the performance of the lighting system.
5. **Consumer electronic devices**:
In consumer electronic devices, such as battery management systems and portable electronic devices, FQD6N25-VB can be used as a switch controller to provide stable current control and switching operation to ensure the normal operation and energy efficiency of the equipment.
These application examples demonstrate the wide applicability of FQD6N25-VB in medium voltage switch control and power conversion, especially in systems that require medium voltage and current processing.
1. **Power management system**:
FQD6N25-VB can be used as a switch controller in the power management system for the switching operation of the power supply. Its 250V drain-source voltage and 640mΩ on-resistance enable it to effectively control the switching state of the power supply and improve the efficiency and stability of the system.
2. **DC-DC converter**:
In DC-DC converter applications, FQD6N25-VB can be used as a switch controller to manage the power conversion process. Suitable for medium voltage converters, it can provide stable conversion performance to ensure the effective transfer and conversion of power.
3. **Motor drive**:
This MOSFET is suitable for medium current motor drive systems, especially in medium voltage environments, by providing stable switching control to improve the operating efficiency and performance of the motor.
4. **High-efficiency lighting systems**:
In high-efficiency lighting systems, such as LED drive circuits, FQD6N25-VB can be used as a switch control device to manage the switch state of the lighting module, provide stable drive current, and optimize the performance of the lighting system.
5. **Consumer electronic devices**:
In consumer electronic devices, such as battery management systems and portable electronic devices, FQD6N25-VB can be used as a switch controller to provide stable current control and switching operation to ensure the normal operation and energy efficiency of the equipment.
These application examples demonstrate the wide applicability of FQD6N25-VB in medium voltage switch control and power conversion, especially in systems that require medium voltage and current processing.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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