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FQD6N25TF-VB Product details
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1. Product Introduction
FQD6N25TF-VB is a medium-to-high voltage N-channel MOSFET in TO-252 package, designed for medium voltage applications. Its maximum drain-source voltage is 250V, making it suitable for handling higher voltage loads. This MOSFET uses Trench technology to provide high efficiency and stable switching performance, and is widely used in power management, motor control and other medium voltage switching applications.
FQD6N25TF-VB is a medium-to-high voltage N-channel MOSFET in TO-252 package, designed for medium voltage applications. Its maximum drain-source voltage is 250V, making it suitable for handling higher voltage loads. This MOSFET uses Trench technology to provide high efficiency and stable switching performance, and is widely used in power management, motor control and other medium voltage switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3V | 4.5A | 640mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3V | 4.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3V | 4.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description
- **Package type**: TO-252
The TO-252 package is a surface mount package with good heat dissipation and mechanical strength, suitable for medium power applications.
- **Polarity**: Single N-channel
As an N-channel MOSFET, the device is used to handle the switching and control tasks of positive voltage loads.
- **Maximum drain-source voltage (VDS)**: 250V
The maximum drain-source voltage is 250V, which is suitable for applications in medium voltage environments and can handle high voltage loads.
- **Maximum gate-source voltage (VGS)**: ±20V
Supporting a gate-source voltage of ±20V provides a large operating range and flexibility, suitable for various gate drive requirements.
- **Threshold voltage (Vth)**: 3V
The turn-on voltage is 3V, which is suitable for applications with medium gate drive voltages, ensuring stable switching performance.
- **On-resistance (RDS(ON))**:
- **640mΩ @ VGS = 10V**
At 10V gate drive voltage, the on-resistance is 640mΩ, which is suitable for switching tasks with medium current loads.
- **Maximum drain current (ID)**: 4.5A
The maximum drain current is 4.5A, which is suitable for switching requirements to handle medium current loads.
- **Technology**: Trench process
Using Trench technology, this process provides lower on-resistance and higher switching efficiency, which is suitable for efficient current control and power conversion.
- **Package type**: TO-252
The TO-252 package is a surface mount package with good heat dissipation and mechanical strength, suitable for medium power applications.
- **Polarity**: Single N-channel
As an N-channel MOSFET, the device is used to handle the switching and control tasks of positive voltage loads.
- **Maximum drain-source voltage (VDS)**: 250V
The maximum drain-source voltage is 250V, which is suitable for applications in medium voltage environments and can handle high voltage loads.
- **Maximum gate-source voltage (VGS)**: ±20V
Supporting a gate-source voltage of ±20V provides a large operating range and flexibility, suitable for various gate drive requirements.
- **Threshold voltage (Vth)**: 3V
The turn-on voltage is 3V, which is suitable for applications with medium gate drive voltages, ensuring stable switching performance.
- **On-resistance (RDS(ON))**:
- **640mΩ @ VGS = 10V**
At 10V gate drive voltage, the on-resistance is 640mΩ, which is suitable for switching tasks with medium current loads.
- **Maximum drain current (ID)**: 4.5A
The maximum drain current is 4.5A, which is suitable for switching requirements to handle medium current loads.
- **Technology**: Trench process
Using Trench technology, this process provides lower on-resistance and higher switching efficiency, which is suitable for efficient current control and power conversion.
Domain and module applications：
3. Application fields and module description
1. **Power converter**: FQD6N25TF-VB is suitable for switching applications in medium voltage power converters. Its 250V drain-source voltage capability enables it to work stably in power converters, and is suitable for efficient switching control in AC-DC converters and DC-DC converters, ensuring stable power conversion and current management.
2. **Motor control**: In motor control circuits, this MOSFET is able to handle medium voltage and medium current switching tasks. Its 640mΩ on-resistance and 4.5A maximum drain current make it suitable for motor drive and control circuits, providing reliable motor control and regulation functions.
3. **Power management system**: FQD6N25TF-VB also performs well in power management systems. Its 250V withstand voltage capability and stable switching performance ensure reliable operation in power management applications, including power switching, current protection, and power regulation functions.
4. **LED drive circuit**: In LED drive applications, this MOSFET can be used for medium voltage and medium current switching tasks. Its stable switching performance and high efficiency ensure reliable control in LED lamps, including switching and regulation functions in LED drive circuits.
5. **Industrial automation**: This MOSFET is also widely used in industrial automation systems. Its 250V withstand voltage capability and 4.5A drain current make it suitable for a variety of medium voltage control tasks, including switching and regulation in automation equipment, ensuring stable operation of industrial processes.
These application scenarios demonstrate the wide applicability of FQD6N25TF-VB in medium voltage environments, especially in applications that require efficient switching and stable performance.
1. **Power converter**: FQD6N25TF-VB is suitable for switching applications in medium voltage power converters. Its 250V drain-source voltage capability enables it to work stably in power converters, and is suitable for efficient switching control in AC-DC converters and DC-DC converters, ensuring stable power conversion and current management.
2. **Motor control**: In motor control circuits, this MOSFET is able to handle medium voltage and medium current switching tasks. Its 640mΩ on-resistance and 4.5A maximum drain current make it suitable for motor drive and control circuits, providing reliable motor control and regulation functions.
3. **Power management system**: FQD6N25TF-VB also performs well in power management systems. Its 250V withstand voltage capability and stable switching performance ensure reliable operation in power management applications, including power switching, current protection, and power regulation functions.
4. **LED drive circuit**: In LED drive applications, this MOSFET can be used for medium voltage and medium current switching tasks. Its stable switching performance and high efficiency ensure reliable control in LED lamps, including switching and regulation functions in LED drive circuits.
5. **Industrial automation**: This MOSFET is also widely used in industrial automation systems. Its 250V withstand voltage capability and 4.5A drain current make it suitable for a variety of medium voltage control tasks, including switching and regulation in automation equipment, ensuring stable operation of industrial processes.
These application scenarios demonstrate the wide applicability of FQD6N25TF-VB in medium voltage environments, especially in applications that require efficient switching and stable performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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