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FQD630TM-VB Product details
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FQD630TM-VB MOSFET Product Introduction
FQD630TM-VB is a high-performance N-channel MOSFET in a TO-252 package, designed for medium-to-high voltage and medium current applications. This MOSFET has a drain-source voltage (VDS) of 200V, suitable for high voltage environments. The gate-source voltage (VGS) is ±20V, providing a flexible control range. Its threshold voltage (Vth) is 3V, ensuring stable conduction at moderate gate voltages. FQD630TM-VB uses Trench technology, with an on-resistance (RDS(ON)) of 245mΩ (at a gate voltage of 10V), capable of carrying a continuous drain current (ID) of 10A, suitable for high voltage switching applications.
FQD630TM-VB is a high-performance N-channel MOSFET in a TO-252 package, designed for medium-to-high voltage and medium current applications. This MOSFET has a drain-source voltage (VDS) of 200V, suitable for high voltage environments. The gate-source voltage (VGS) is ±20V, providing a flexible control range. Its threshold voltage (Vth) is 3V, ensuring stable conduction at moderate gate voltages. FQD630TM-VB uses Trench technology, with an on-resistance (RDS(ON)) of 245mΩ (at a gate voltage of 10V), capable of carrying a continuous drain current (ID) of 10A, suitable for high voltage switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | 245mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description of FQD630TM-VB
1. **Package**: TO-252
- Suitable for surface mounting, with good heat dissipation performance, ensuring the stability and durability of MOSFET in power applications.
2. **Configuration**: Single N-channel
- Single N-channel MOSFET, suitable for low-side switch and load switching applications, commonly used in power management and load control.
3. **Drain-source voltage (VDS)**: 200V
- Indicates the maximum drain-to-source voltage that the MOSFET can withstand, suitable for high voltage applications.
4. **Gate-source voltage (VGS)**: ±20V
- The maximum voltage allowed to be applied between the gate and the source, providing a wide control range.
5. **Threshold voltage (Vth)**: 3V
- The minimum gate voltage required to turn on the MOSFET, ensuring stable switching at typical gate voltages.
6. **On-resistance (RDS(ON))**: 245mΩ @ VGS=10V
- The drain-to-source resistance of the MOSFET at a gate voltage of 10V, affecting switching efficiency and power consumption.
7. **Continuous drain current (ID)**: 10A
- The maximum current that the MOSFET can carry under continuous operating conditions, suitable for medium current applications.
8. **Technology**: Trench
- Using Trench technology, it provides low on-resistance and high switching efficiency, reduces power consumption and improves system performance.
1. **Package**: TO-252
- Suitable for surface mounting, with good heat dissipation performance, ensuring the stability and durability of MOSFET in power applications.
2. **Configuration**: Single N-channel
- Single N-channel MOSFET, suitable for low-side switch and load switching applications, commonly used in power management and load control.
3. **Drain-source voltage (VDS)**: 200V
- Indicates the maximum drain-to-source voltage that the MOSFET can withstand, suitable for high voltage applications.
4. **Gate-source voltage (VGS)**: ±20V
- The maximum voltage allowed to be applied between the gate and the source, providing a wide control range.
5. **Threshold voltage (Vth)**: 3V
- The minimum gate voltage required to turn on the MOSFET, ensuring stable switching at typical gate voltages.
6. **On-resistance (RDS(ON))**: 245mΩ @ VGS=10V
- The drain-to-source resistance of the MOSFET at a gate voltage of 10V, affecting switching efficiency and power consumption.
7. **Continuous drain current (ID)**: 10A
- The maximum current that the MOSFET can carry under continuous operating conditions, suitable for medium current applications.
8. **Technology**: Trench
- Using Trench technology, it provides low on-resistance and high switching efficiency, reduces power consumption and improves system performance.
Domain and module applications：
Application Examples of FQD630TM-VB
FQD630TM-VB MOSFET is suitable for a variety of medium-to-high voltage and medium-current switching applications due to its high voltage withstand capability of 200V and 245mΩ on-resistance. Here are some specific application examples:
1. **Power switch**: In switching power supply design, FQD630TM-VB can work as a high-side or low-side switch to control high voltage input or output to ensure efficient and stable operation of the power system.
2. **Power converter**: In DC-DC converters and other power conversion modules, FQD630TM-VB is suitable for high voltage switching, supporting load switching and current control during voltage conversion.
3. **Motor drive**: In drive circuits that need to control medium current motors, FQD630TM-VB can effectively switch current to support the starting, running and stopping of motors.
4. **Industrial control systems**: In industrial control and automation systems, FQD630TM-VB is used for load switching and switch control to ensure reliable operation of equipment in high voltage environments.
5. **Battery management system (BMS)**: In battery management systems, especially in applications where high voltage battery packs need to be controlled, FQD630TM-VB can provide stable switching performance to protect the safety of batteries and systems.
FQD630TM-VB MOSFET, with its high voltage tolerance and low on-resistance, provides an efficient switching solution for medium and high voltage applications. Its Trench technology further improves switching efficiency and is suitable for a variety of power and control application scenarios.
FQD630TM-VB MOSFET is suitable for a variety of medium-to-high voltage and medium-current switching applications due to its high voltage withstand capability of 200V and 245mΩ on-resistance. Here are some specific application examples:
1. **Power switch**: In switching power supply design, FQD630TM-VB can work as a high-side or low-side switch to control high voltage input or output to ensure efficient and stable operation of the power system.
2. **Power converter**: In DC-DC converters and other power conversion modules, FQD630TM-VB is suitable for high voltage switching, supporting load switching and current control during voltage conversion.
3. **Motor drive**: In drive circuits that need to control medium current motors, FQD630TM-VB can effectively switch current to support the starting, running and stopping of motors.
4. **Industrial control systems**: In industrial control and automation systems, FQD630TM-VB is used for load switching and switch control to ensure reliable operation of equipment in high voltage environments.
5. **Battery management system (BMS)**: In battery management systems, especially in applications where high voltage battery packs need to be controlled, FQD630TM-VB can provide stable switching performance to protect the safety of batteries and systems.
FQD630TM-VB MOSFET, with its high voltage tolerance and low on-resistance, provides an efficient switching solution for medium and high voltage applications. Its Trench technology further improves switching efficiency and is suitable for a variety of power and control application scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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