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FQD5N50F-VB Product details
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1. Product Introduction
FQD5N50F-VB is a high voltage N-type MOSFET in TO252 package, designed for high voltage applications. This MOSFET supports a maximum drain-source voltage (VDS) of 650V and can handle a maximum drain current of 5A. Its threshold voltage (Vth) is 3.5V, and it can be stably turned on at an appropriate gate-source voltage. Manufactured using SJ_Multi-EPI technology, FQD5N50F-VB provides good voltage handling capability and moderate on-resistance (RDS(ON)=1000mΩ@VGS=10V), suitable for applications that require high voltage handling and efficient switching performance.
FQD5N50F-VB is a high voltage N-type MOSFET in TO252 package, designed for high voltage applications. This MOSFET supports a maximum drain-source voltage (VDS) of 650V and can handle a maximum drain current of 5A. Its threshold voltage (Vth) is 3.5V, and it can be stably turned on at an appropriate gate-source voltage. Manufactured using SJ_Multi-EPI technology, FQD5N50F-VB provides good voltage handling capability and moderate on-resistance (RDS(ON)=1000mΩ@VGS=10V), suitable for applications that require high voltage handling and efficient switching performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single channel N-type
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ@VGS=10V
- **Maximum drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI (multi-layer enhanced technology)
- **Package size**: TO252 package is usually 6.60mm x 8.60mm
- **Package type**: TO252
- **Configuration**: Single channel N-type
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ@VGS=10V
- **Maximum drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI (multi-layer enhanced technology)
- **Package size**: TO252 package is usually 6.60mm x 8.60mm
Domain and module applications：
3. Application fields and modules
The high voltage handling capability and reliable switching performance of FQD5N50F-VB MOSFET make it very suitable in multiple fields and modules, including:
1. **High voltage power management**: In high voltage DC-DC converters and switching power supplies, FQD5N50F-VB can handle voltages up to 650V and provide stable switching functions to ensure the efficiency and safety of the power system.
2. **Load switch**: Suitable for scenarios where high voltage load switching is required, such as industrial equipment and power control. The high voltage handling capability and reliable switching performance of this MOSFET enable it to effectively control high voltage loads.
3. **Motor drive**: In high voltage motor drive circuits, FQD5N50F-VB can be used for switch control to ensure stable operation of motors under high voltage conditions, and is widely used in motor control systems.
4. **Power Inverter**: In power inverters and frequency converters, FQD5N50F-VB can handle high voltage conversion as a switching element, improving the performance and efficiency of the inverter, and is suitable for applications such as solar inverters and UPS systems.
In summary, FQD5N50F-VB MOSFET, with its high voltage handling capability and stable switching characteristics, is very suitable for high voltage power management, load switching, motor drive and power inverter applications that require high voltage handling and high efficiency performance.
The high voltage handling capability and reliable switching performance of FQD5N50F-VB MOSFET make it very suitable in multiple fields and modules, including:
1. **High voltage power management**: In high voltage DC-DC converters and switching power supplies, FQD5N50F-VB can handle voltages up to 650V and provide stable switching functions to ensure the efficiency and safety of the power system.
2. **Load switch**: Suitable for scenarios where high voltage load switching is required, such as industrial equipment and power control. The high voltage handling capability and reliable switching performance of this MOSFET enable it to effectively control high voltage loads.
3. **Motor drive**: In high voltage motor drive circuits, FQD5N50F-VB can be used for switch control to ensure stable operation of motors under high voltage conditions, and is widely used in motor control systems.
4. **Power Inverter**: In power inverters and frequency converters, FQD5N50F-VB can handle high voltage conversion as a switching element, improving the performance and efficiency of the inverter, and is suitable for applications such as solar inverters and UPS systems.
In summary, FQD5N50F-VB MOSFET, with its high voltage handling capability and stable switching characteristics, is very suitable for high voltage power management, load switching, motor drive and power inverter applications that require high voltage handling and high efficiency performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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