中文
English
FQD5N50C-VB Product details
Back to previous pageProduct introduction：
FQD5N50C-VB Product Introduction
FQD5N50C-VB is a high voltage N-channel power MOSFET in TO252 package, designed for medium current and high voltage applications. The device has a drain-source voltage (VDS) of 650V and supports a gate-source voltage (VGS) of ±30V. Its typical turn-on voltage is 3.5V and its on-resistance is 1000mΩ at VGS=10V. The maximum drain current of FQD5N50C-VB is 5A, and it uses SJ_Multi-EPI technology, which is suitable for switching applications requiring high voltage and medium current, such as power management and power conversion modules.
FQD5N50C-VB is a high voltage N-channel power MOSFET in TO252 package, designed for medium current and high voltage applications. The device has a drain-source voltage (VDS) of 650V and supports a gate-source voltage (VGS) of ±30V. Its typical turn-on voltage is 3.5V and its on-resistance is 1000mΩ at VGS=10V. The maximum drain current of FQD5N50C-VB is 5A, and it uses SJ_Multi-EPI technology, which is suitable for switching applications requiring high voltage and medium current, such as power management and power conversion modules.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
FQD5N50C-VB Detailed parameter description
1. **Package type**: TO252
The TO252 package is suitable for surface mounting, with good heat dissipation and compact design, suitable for a variety of electronic applications.
2. **Polarity**: Single N-channel
As a single N-channel MOSFET, the FQD5N50C-VB is suitable for low-side switching applications and effectively controls the flow of current.
3. **Drain-source voltage (VDS)**: 650V
The maximum drain-source voltage of this MOSFET is 650V, which can work stably in a high voltage environment and is suitable for high voltage switching applications.
4. **Gate-source voltage (VGS)**: ±30V
Supports gate-source voltages up to ±30V to ensure stability and reliability under various operating conditions.
5. **Throw-on voltage (Vth)**: 3.5V
The typical turn-on voltage is 3.5V, which allows the MOSFET to be effectively turned on at a lower gate voltage, improving switching efficiency.
6. **On-resistance (RDS(ON))**: 1000mΩ @ VGS=10V
When VGS=10V, the on-resistance is 1000mΩ, which is suitable for switching applications requiring high voltage and medium current.
7. **Drain current (ID)**: 5A
The maximum drain current is 5A, which is suitable for medium current switching applications.
8. **Technology**: SJ_Multi-EPI
Using SJ_Multi-EPI technology, it provides high voltage tolerance and low on-resistance, suitable for high voltage applications.
1. **Package type**: TO252
The TO252 package is suitable for surface mounting, with good heat dissipation and compact design, suitable for a variety of electronic applications.
2. **Polarity**: Single N-channel
As a single N-channel MOSFET, the FQD5N50C-VB is suitable for low-side switching applications and effectively controls the flow of current.
3. **Drain-source voltage (VDS)**: 650V
The maximum drain-source voltage of this MOSFET is 650V, which can work stably in a high voltage environment and is suitable for high voltage switching applications.
4. **Gate-source voltage (VGS)**: ±30V
Supports gate-source voltages up to ±30V to ensure stability and reliability under various operating conditions.
5. **Throw-on voltage (Vth)**: 3.5V
The typical turn-on voltage is 3.5V, which allows the MOSFET to be effectively turned on at a lower gate voltage, improving switching efficiency.
6. **On-resistance (RDS(ON))**: 1000mΩ @ VGS=10V
When VGS=10V, the on-resistance is 1000mΩ, which is suitable for switching applications requiring high voltage and medium current.
7. **Drain current (ID)**: 5A
The maximum drain current is 5A, which is suitable for medium current switching applications.
8. **Technology**: SJ_Multi-EPI
Using SJ_Multi-EPI technology, it provides high voltage tolerance and low on-resistance, suitable for high voltage applications.
Domain and module applications：
Application fields and module examples
1. **High voltage switching power supply**:
FQD5N50C-VB can be used as the main switching device in high voltage switching power supply for power switch control. Its 650V drain-source voltage enables it to work stably in high voltage environment, especially suitable for use in power conversion and regulation modules.
2. **Power converter**:
In power converter applications, such as AC-DC converter or DC-DC converter, FQD5N50C-VB can be used as a switch controller to manage the power conversion process and improve the overall efficiency of the system, especially in the case of handling high voltage.
3. **Motor drive**:
This MOSFET is suitable for medium current motor drive systems, especially in the case of high voltage, by providing stable switching control, optimizing the operation and performance of the motor, and ensuring the accuracy of motor starting and stopping.
4. **Power Management System**:
In high voltage power management systems, FQD5N50C-VB can be used as a switch control device to manage the switching state and current flow of the power supply to ensure the normal operation and stability of the system.
5. **Industrial Application**:
In high voltage industrial equipment, such as high voltage power supplies and equipment control systems, FQD5N50C-VB can be used as a switch controller to provide reliable switching operation and high voltage tolerance, suitable for use in complex industrial environments.
These application examples demonstrate the wide applicability of FQD5N50C-VB in high voltage switch control and power conversion, especially in systems that require high voltage and medium current handling.
1. **High voltage switching power supply**:
FQD5N50C-VB can be used as the main switching device in high voltage switching power supply for power switch control. Its 650V drain-source voltage enables it to work stably in high voltage environment, especially suitable for use in power conversion and regulation modules.
2. **Power converter**:
In power converter applications, such as AC-DC converter or DC-DC converter, FQD5N50C-VB can be used as a switch controller to manage the power conversion process and improve the overall efficiency of the system, especially in the case of handling high voltage.
3. **Motor drive**:
This MOSFET is suitable for medium current motor drive systems, especially in the case of high voltage, by providing stable switching control, optimizing the operation and performance of the motor, and ensuring the accuracy of motor starting and stopping.
4. **Power Management System**:
In high voltage power management systems, FQD5N50C-VB can be used as a switch control device to manage the switching state and current flow of the power supply to ensure the normal operation and stability of the system.
5. **Industrial Application**:
In high voltage industrial equipment, such as high voltage power supplies and equipment control systems, FQD5N50C-VB can be used as a switch controller to provide reliable switching operation and high voltage tolerance, suitable for use in complex industrial environments.
These application examples demonstrate the wide applicability of FQD5N50C-VB in high voltage switch control and power conversion, especially in systems that require high voltage and medium current handling.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
