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FQD5N50CTM-VB Product details
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1. Product Introduction
FQD5N50CTM-VB is a high voltage N-channel MOSFET in TO-252 package, designed to handle high voltage applications. Its maximum drain-source voltage is 650V, which can cope with harsh voltage conditions. Using SJ_Multi-EPI technology, this MOSFET provides high voltage tolerance and stable switching performance, suitable for high voltage scenarios such as power conversion, power management and industrial control.
FQD5N50CTM-VB is a high voltage N-channel MOSFET in TO-252 package, designed to handle high voltage applications. Its maximum drain-source voltage is 650V, which can cope with harsh voltage conditions. Using SJ_Multi-EPI technology, this MOSFET provides high voltage tolerance and stable switching performance, suitable for high voltage scenarios such as power conversion, power management and industrial control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description
- **Package type**: TO-252
The TO-252 package is a surface mount package with good heat dissipation and mechanical strength, suitable for medium power applications.
- **Polarity**: Single N-channel
As an N-channel MOSFET, the device is used to handle the switching and control of positive voltage loads.
- **Maximum drain-source voltage (VDS)**: 650V
The maximum drain-source voltage is 650V, which is suitable for applications in high voltage environments and can handle high voltage loads.
- **Maximum gate-source voltage (VGS)**: ±30V
Supporting a gate-source voltage of ±30V provides a large operating range and flexibility to meet various gate drive requirements.
- **Threshold voltage (Vth)**: 3.5V
The on-voltage is 3.5V, which is suitable for applications with medium gate drive voltages to ensure stable switching performance.
- **On-resistance (RDS(ON))**:
- **1000mΩ @ VGS = 10V**
At 10V gate drive voltage, the on-resistance is 1000mΩ, suitable for switching applications with medium current loads.
- **Maximum drain current (ID)**: 5A
The maximum drain current is 5A, suitable for switching needs to handle medium current loads.
- **Technology**: SJ_Multi-EPI process
Using SJ_Multi-EPI technology, this process provides high voltage tolerance and low on-resistance, suitable for high efficiency and high stability requirements in high voltage applications.
- **Package type**: TO-252
The TO-252 package is a surface mount package with good heat dissipation and mechanical strength, suitable for medium power applications.
- **Polarity**: Single N-channel
As an N-channel MOSFET, the device is used to handle the switching and control of positive voltage loads.
- **Maximum drain-source voltage (VDS)**: 650V
The maximum drain-source voltage is 650V, which is suitable for applications in high voltage environments and can handle high voltage loads.
- **Maximum gate-source voltage (VGS)**: ±30V
Supporting a gate-source voltage of ±30V provides a large operating range and flexibility to meet various gate drive requirements.
- **Threshold voltage (Vth)**: 3.5V
The on-voltage is 3.5V, which is suitable for applications with medium gate drive voltages to ensure stable switching performance.
- **On-resistance (RDS(ON))**:
- **1000mΩ @ VGS = 10V**
At 10V gate drive voltage, the on-resistance is 1000mΩ, suitable for switching applications with medium current loads.
- **Maximum drain current (ID)**: 5A
The maximum drain current is 5A, suitable for switching needs to handle medium current loads.
- **Technology**: SJ_Multi-EPI process
Using SJ_Multi-EPI technology, this process provides high voltage tolerance and low on-resistance, suitable for high efficiency and high stability requirements in high voltage applications.
Domain and module applications：
3. Application fields and module description
1. **Power converter**: FQD5N50CTM-VB is suitable for switching applications in high voltage power converters. Its 650V drain-source voltage capability enables it to work stably in high voltage environments, suitable for use in AC-DC converters and DC-DC converters, ensuring efficient current control and power conversion.
2. **Power management system**: In power management systems, this MOSFET can handle the switching tasks of high voltage loads. Its high voltage tolerance and low on-resistance make it suitable for power switching, power regulation and current protection circuits, providing reliable power management and control.
3. **Industrial control system**: FQD5N50CTM-VB can be used for switching and regulating high voltage control signals in industrial control systems. Its 650V voltage tolerance and stable switching performance ensure reliable control in industrial automation equipment, including motor drives, valve control and sensor interfaces.
4. **Motor drive**: In motor drive circuits, this MOSFET can be used for high voltage and medium current switching tasks. Its high voltage isolation capability and stable switching performance make it suitable for use in motor control circuits, ensuring reliable operation and high efficiency of the motor.
5. **HVAC system**: This MOSFET is also widely used in heating, ventilation and air conditioning (HVAC) systems. Its 650V withstand voltage capability and high current handling capability ensure the reliable operation of HVAC systems in high voltage environments, suitable for power management and control tasks in the system.
These application scenarios demonstrate the wide applicability of FQD5N50CTM-VB in high voltage and medium current environments, especially in applications that require high voltage handling and stable switching performance.
1. **Power converter**: FQD5N50CTM-VB is suitable for switching applications in high voltage power converters. Its 650V drain-source voltage capability enables it to work stably in high voltage environments, suitable for use in AC-DC converters and DC-DC converters, ensuring efficient current control and power conversion.
2. **Power management system**: In power management systems, this MOSFET can handle the switching tasks of high voltage loads. Its high voltage tolerance and low on-resistance make it suitable for power switching, power regulation and current protection circuits, providing reliable power management and control.
3. **Industrial control system**: FQD5N50CTM-VB can be used for switching and regulating high voltage control signals in industrial control systems. Its 650V voltage tolerance and stable switching performance ensure reliable control in industrial automation equipment, including motor drives, valve control and sensor interfaces.
4. **Motor drive**: In motor drive circuits, this MOSFET can be used for high voltage and medium current switching tasks. Its high voltage isolation capability and stable switching performance make it suitable for use in motor control circuits, ensuring reliable operation and high efficiency of the motor.
5. **HVAC system**: This MOSFET is also widely used in heating, ventilation and air conditioning (HVAC) systems. Its 650V withstand voltage capability and high current handling capability ensure the reliable operation of HVAC systems in high voltage environments, suitable for power management and control tasks in the system.
These application scenarios demonstrate the wide applicability of FQD5N50CTM-VB in high voltage and medium current environments, especially in applications that require high voltage handling and stable switching performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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