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FQD5N50C-NL-VB Product details
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FQD5N50C-NL-VB MOSFET Product Introduction
FQD5N50C-NL-VB is a high voltage N-channel MOSFET in a TO-252 package, which is particularly suitable for high voltage and medium current applications. With a drain-source voltage (VDS) of 650V, this MOSFET can operate reliably in a high voltage environment. The gate-source voltage (VGS) is ±30V, providing a flexible control voltage range. Its threshold voltage (Vth) is 3.5V, ensuring stable switching at moderate gate voltages. The FQD5N50C-NL-VB uses SJ_Multi-EPI technology, and its on-resistance (RDS(ON)) is 1000mΩ (at a gate voltage of 10V), and it can carry a continuous drain current (ID) of 5A, making it suitable for switching applications requiring high voltage resistance and medium current.
FQD5N50C-NL-VB is a high voltage N-channel MOSFET in a TO-252 package, which is particularly suitable for high voltage and medium current applications. With a drain-source voltage (VDS) of 650V, this MOSFET can operate reliably in a high voltage environment. The gate-source voltage (VGS) is ±30V, providing a flexible control voltage range. Its threshold voltage (Vth) is 3.5V, ensuring stable switching at moderate gate voltages. The FQD5N50C-NL-VB uses SJ_Multi-EPI technology, and its on-resistance (RDS(ON)) is 1000mΩ (at a gate voltage of 10V), and it can carry a continuous drain current (ID) of 5A, making it suitable for switching applications requiring high voltage resistance and medium current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description of FQD5N50C-NL-VB
1. **Package**: TO-252
- Suitable for surface mounting, with good heat dissipation performance, ensuring the stability of MOSFET in high-power applications.
2. **Configuration**: Single N-channel
- Single N-channel MOSFET, suitable for low-side switching and load switching applications.
3. **Drain-source voltage (VDS)**: 650V
- The maximum drain-to-source voltage that can be tolerated, suitable for switching applications in high-voltage environments.
4. **Gate-source voltage (VGS)**: ±30V
- The maximum voltage that can be applied between the gate and source, providing a wide range of control voltages.
5. **Threshold Voltage (Vth)**: 3.5V
- Minimum gate voltage required to turn on the MOSFET, suitable for stable operation under common gate drive conditions.
6. **On-resistance (RDS(ON))**: 1000mΩ @ VGS=10V
- Drain-to-source resistance of the MOSFET when fully turned on at a gate voltage of 10V, affecting power consumption and switching efficiency.
7. **Continuous Drain Current (ID)**: 5A
- Maximum current that the MOSFET can carry under continuous operation.
8. **Technology**: SJ_Multi-EPI
- SJ_Multi-EPI technology is used to improve voltage withstand capability and conduction performance and reduce on-resistance.
1. **Package**: TO-252
- Suitable for surface mounting, with good heat dissipation performance, ensuring the stability of MOSFET in high-power applications.
2. **Configuration**: Single N-channel
- Single N-channel MOSFET, suitable for low-side switching and load switching applications.
3. **Drain-source voltage (VDS)**: 650V
- The maximum drain-to-source voltage that can be tolerated, suitable for switching applications in high-voltage environments.
4. **Gate-source voltage (VGS)**: ±30V
- The maximum voltage that can be applied between the gate and source, providing a wide range of control voltages.
5. **Threshold Voltage (Vth)**: 3.5V
- Minimum gate voltage required to turn on the MOSFET, suitable for stable operation under common gate drive conditions.
6. **On-resistance (RDS(ON))**: 1000mΩ @ VGS=10V
- Drain-to-source resistance of the MOSFET when fully turned on at a gate voltage of 10V, affecting power consumption and switching efficiency.
7. **Continuous Drain Current (ID)**: 5A
- Maximum current that the MOSFET can carry under continuous operation.
8. **Technology**: SJ_Multi-EPI
- SJ_Multi-EPI technology is used to improve voltage withstand capability and conduction performance and reduce on-resistance.
Domain and module applications：
Application examples of FQD5N50C-NL-VB
FQD5N50C-NL-VB MOSFET is suitable for various application scenarios requiring high voltage and medium current control due to its high voltage tolerance and good switching performance. Here are some specific application examples:
1. **High voltage power switch**: FQD5N50C-NL-VB is suitable for switching applications in high voltage power systems. Its 650V VDS enables it to reliably handle high voltage loads and is widely used in power management systems such as switching power supplies and inverters.
2. **Motor drive**: In motor drive circuits, especially DC motors or stepper motor drives that require high voltage control, FQD5N50C-NL-VB can provide stable switching functions to support the start-up and operation of the motor.
3. **Home appliance applications**: In high-voltage home appliances, such as air conditioners and washing machines, FQD5N50C-NL-VB can be used for load switches and protection circuits to ensure reliable operation of the equipment.
4. **Industrial control systems**: In industrial control systems, especially those involving high-voltage power supplies, the high voltage tolerance and medium current handling capabilities of FQD5N50C-NL-VB make it very suitable for use in various switches and protection circuits.
With its high voltage tolerance of 650V and low on-resistance, the FQD5N50C-NL-VB MOSFET provides stable performance and efficient switching solutions for high voltage and medium current applications. Its SJ_Multi-EPI technology further enhances its reliability and efficiency in high voltage environments.
FQD5N50C-NL-VB MOSFET is suitable for various application scenarios requiring high voltage and medium current control due to its high voltage tolerance and good switching performance. Here are some specific application examples:
1. **High voltage power switch**: FQD5N50C-NL-VB is suitable for switching applications in high voltage power systems. Its 650V VDS enables it to reliably handle high voltage loads and is widely used in power management systems such as switching power supplies and inverters.
2. **Motor drive**: In motor drive circuits, especially DC motors or stepper motor drives that require high voltage control, FQD5N50C-NL-VB can provide stable switching functions to support the start-up and operation of the motor.
3. **Home appliance applications**: In high-voltage home appliances, such as air conditioners and washing machines, FQD5N50C-NL-VB can be used for load switches and protection circuits to ensure reliable operation of the equipment.
4. **Industrial control systems**: In industrial control systems, especially those involving high-voltage power supplies, the high voltage tolerance and medium current handling capabilities of FQD5N50C-NL-VB make it very suitable for use in various switches and protection circuits.
With its high voltage tolerance of 650V and low on-resistance, the FQD5N50C-NL-VB MOSFET provides stable performance and efficient switching solutions for high voltage and medium current applications. Its SJ_Multi-EPI technology further enhances its reliability and efficiency in high voltage environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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