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FQD5N40TF-VB Product details
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FQD5N40TF-VB MOSFET Overview
The FQD5N40TF-VB is a high voltage single N-channel MOSFET in a TO-252 package, suitable for applications requiring high voltage and high switching efficiency. Its design uses SJ_Multi-EPI (Super Junction Multi-Epi) technology to provide excellent electrical performance and efficient energy management. With a drain-source voltage capability of 650V and low on-resistance, this MOSFET is ideal for use in high voltage power management and switching circuits.
The FQD5N40TF-VB is a high voltage single N-channel MOSFET in a TO-252 package, suitable for applications requiring high voltage and high switching efficiency. Its design uses SJ_Multi-EPI (Super Junction Multi-Epi) technology to provide excellent electrical performance and efficient energy management. With a drain-source voltage capability of 650V and low on-resistance, this MOSFET is ideal for use in high voltage power management and switching circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package:** TO-252
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 650V
- **Gate-source voltage (VGS):** ±30V
- **Threshold voltage (Vth):** 3.5V
- **On-resistance (RDS(ON)):** 1000mΩ @ VGS = 10V
- **Drain current (ID):** 5A
- **Technology:** SJ_Multi-EPI (Super Junction Multiple Epitaxial Layer)
FQD5N40TF-VB adopts SJ_Multi-EPI technology, which helps to reduce on-resistance and improve the voltage tolerance of the device, enabling it to maintain efficient switching performance under high voltage environments.
- **Package:** TO-252
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 650V
- **Gate-source voltage (VGS):** ±30V
- **Threshold voltage (Vth):** 3.5V
- **On-resistance (RDS(ON)):** 1000mΩ @ VGS = 10V
- **Drain current (ID):** 5A
- **Technology:** SJ_Multi-EPI (Super Junction Multiple Epitaxial Layer)
FQD5N40TF-VB adopts SJ_Multi-EPI technology, which helps to reduce on-resistance and improve the voltage tolerance of the device, enabling it to maintain efficient switching performance under high voltage environments.
Domain and module applications：
Application Examples
**1. High Voltage Power Management: **
- FQD5N40TF-VB is suitable for high voltage power management systems, such as high voltage DC-DC converters and power switches. Its 650V drain-source voltage capability enables it to handle switching operations in high voltage applications, provide stable power control, and effectively reduce power losses.
**2. High Voltage Inverter: **
- In high voltage inverter applications, such as solar inverters or uninterruptible power supplies (UPS), this MOSFET provides stable switching performance and high voltage tolerance, capable of handling high voltage input and effectively converting power, ensuring high efficiency and reliability of the inverter system.
**3. Motor Control System: **
- In motor drive systems that require high voltage switching, FQD5N40TF-VB can be used for high voltage motor control circuits. Its high voltage capability and stable switching performance ensure that the motor control system can operate smoothly in a high voltage environment and provide efficient power management.
**4. High-voltage LED lighting systems: **
- FQD5N40TF-VB can be used in high-voltage LED lighting systems, especially in industrial and outdoor high-power lighting applications. Its high drain-source voltage and low on-resistance can provide stable switching performance, effectively control current, and improve the efficiency and service life of LED lighting systems.
**5. Power converters and protection circuits: **
- This MOSFET is also suitable for high-voltage power converters and protection circuits, such as those used in high-voltage power transmission and distribution systems. Its high voltage tolerance and high-efficiency switching characteristics enable it to stably handle high voltage and high power applications, ensuring reliable operation of the system.
**1. High Voltage Power Management: **
- FQD5N40TF-VB is suitable for high voltage power management systems, such as high voltage DC-DC converters and power switches. Its 650V drain-source voltage capability enables it to handle switching operations in high voltage applications, provide stable power control, and effectively reduce power losses.
**2. High Voltage Inverter: **
- In high voltage inverter applications, such as solar inverters or uninterruptible power supplies (UPS), this MOSFET provides stable switching performance and high voltage tolerance, capable of handling high voltage input and effectively converting power, ensuring high efficiency and reliability of the inverter system.
**3. Motor Control System: **
- In motor drive systems that require high voltage switching, FQD5N40TF-VB can be used for high voltage motor control circuits. Its high voltage capability and stable switching performance ensure that the motor control system can operate smoothly in a high voltage environment and provide efficient power management.
**4. High-voltage LED lighting systems: **
- FQD5N40TF-VB can be used in high-voltage LED lighting systems, especially in industrial and outdoor high-power lighting applications. Its high drain-source voltage and low on-resistance can provide stable switching performance, effectively control current, and improve the efficiency and service life of LED lighting systems.
**5. Power converters and protection circuits: **
- This MOSFET is also suitable for high-voltage power converters and protection circuits, such as those used in high-voltage power transmission and distribution systems. Its high voltage tolerance and high-efficiency switching characteristics enable it to stably handle high voltage and high power applications, ensuring reliable operation of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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